浅谈Photoshop教学中“行为导向教学法”的运用

结合本校的教学设施和实际情况,根据几年来对Photoshop教学实践情况,拟就在中等职业技术院校的Photoshop教学中,怎样有效运用"行为导向教学法"进行探讨。     

Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices

The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as a result of the displacement damage in the channel induced by heavy ion strike. The off-state leakage current degradation and threshold voltage shift are also observed after heavy ion irradiation. The results suggest that the radiation induced damage of sub-100 nm MOS devices caused by heavy ion irradiation should be paid attention.     

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

The effects of the physical damages induced by heavy ion irradiation on the performance of partially-depleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are observed due to the random strike of heavy ions. A decrease of the saturation current and transconductance, and an enhanced gate-induced drain leakage current are observed, which are mainly attributed to the displacement damages that may be located in the channel, the depletion region of the drain/body junction or the gate-to-drain overlap region. Further, PDSOI devices with and without body contact are compared, which reveals the differences in the threshold voltage shift, the drain-induced barrier lowing effect, the transconductance and the kink effect. The results may provide a guideline for radiation hardened design.     

Line-edge roughness induced single event transient variation in SOI FinFETs

The impact of process induced variation on the response of SOI FinFET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When FinFET biased at OFF state configuration (V_gs=0, V_ds=V_dd) is struck by a heavy ion, the drain collects ionizing charges under the electric field and a current pulse (single event transient, SET) is consequently formed. The results reveal that with the presence of line-edge roughness (LER), which is one of the major variation sources in nano-scale FinFETs, the device-to-device variation in terms of SET is observed. In this study, three types of LER are considered: type A has symmetric fin edges, type B has irrelevant fin edges and type C has parallel fin edges. The results show that type A devices have the largest SET variation while type C devices have the smallest variation. Further, the impact of the two main LER parameters, correlation length and root mean square amplitude, on SET variation is discussed as well. The results indicate that variation may be a concern in radiation effects with the down scaling of feature size.