排序方式: 共有6条查询结果,搜索用时 15 毫秒
1
1.
2.
The optimization of a SiO2/TiO2,SiO2/ZnS double layer antireflection coating(ARC)on Ga0.5In0.5P/In0.02Ga0.98As/Ge solar cells for terrestrial application is discussed.The Al0.5In0.5P window layer thickness is also taken into consideration.It is shown that the optimal parameters of double layer ARC vary with the thickness of the window layer. 相似文献
3.
4.
5.
6.
通过优化分子束外延生长条件,得到室温发光在1300nm低密度的自组织InAs/GaAs量子点.使用极低的InAs生长速率(0.001单层/秒)可以把量子点的密度降低到4×106cm-2.这些结果使得InAs/GaAs量子点可以作为单光子源应用在未来的光纤基量子密码、量子通信中. 相似文献
1