Torque Transfer to a Conducting Particle Using the Lorentz Force

Semiconductors - In this work, we discuss for the first time the principle of rotation in the constant electric field of a conducting particle with participation of the Lorentz force, which ensures...     

Use of Nuclear Energy in Outer-Space Systems

Atomic Energy - The history and direction of further development of space nuclear energetics are examined. The functional diagram and principle of operation of a promising, powerful,...     

The effects of washing a collagen sample prior to TEM examination

Transmission electron microscopy (TEM) is an important analysis technique to visualize (bio)macromolecules and their assemblies, including collagen fibers. Many protocols for TEM sample preparation of collagen involve one or more washing steps to remove excess salts from the dispersion that could hamper analysis when dried on a TEM grid. Such protocols are not standardized and washing times as well as washing solvents vary from procedure to procedure, with each research group typically having their own protocol. Here, we investigate the influence of washing with water, ethanol, but also methanol and 2-propanol, for both mineralized and unmineralized collagen samples via a protocol based on centrifugation. Washing with water maintains the hydrated collagen structure and the characteristic banding pattern can be clearly observed. Conversely, washing with ethanol results in dehydration of the fibrils, often leading to aggregation of the fibers and a less obvious banding pattern, already within 1 min of ethanol exposure. As we show, this process is fully reversible. Similar observations were made for methanol and propanol. Based on these results, a standardized washing protocol for collagenous samples is proposed.     

The Central Lyapunov Limit Theorem and the Property of the Asymptotic Normality of the Sequence of Stable Polynomial Coefficients

Journal of Computer and Systems Sciences International - It is shown that the Lyapunov theorem on the distribution properties of the sum of random variables with different distribution densities...     

Technological Aspects of Synthesizing Ceramic Coatings by Flow-Through Micro-Arc Oxidation

Refractories and Industrial Ceramics - The paper introduces a promising technology for utilizing a traditional scheme for implementing a flow-through micro-arc oxidation method to restore localized...     

Influence of Titanium Excess in a Ti–Si Reaction Mixture on the Synthesis of a Composite in a Combustion Wave

Theoretical Foundations of Chemical Engineering - On the basis of the classic concepts of the theory of solid-phase combustion, for the first time, a model with a detailed scheme of chemical...     

Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

In this study, dilute chemical bath deposition technique has been used to deposit CdZnS thin films on soda-lime glass substrates. The structural, morphological, optoelectronic properties of as-grown films have been investigated as a function of different Zn²⁺ precursor concentrations. The X-ray diffractogram of CdS thin-film reveals a peak corresponding to (002) plane with wurtzite structure, and the peak shift has been observed with the increase of the Zn²⁺ concentration upon formation of CdZnS thin film. From morphological studies, it has been revealed that the diluted chemical bath deposition technique provides homogeneous distribution of film on the substrate even at a lower concentration of Zn²⁺. Optical characterization has shown that the transparency of the film is influenced by Zn²⁺ concentration and when the Zn²⁺ concentration is varied from 0 M to 0.0256 M, bandgap values of resulting films range from 2.42 eV to 3.90 eV while. Furthermore, electrical properties have shown that with increasing zinc concentration the resistivity of the film increases. Finally, numerical simulation validates and suggests that CdZnS buffer layer with composition of 0.0032 M Zn²⁺ concentration would be a promising candidate in CIGS solar cell.