Colour extension properties of individual pigments and effects on shades of foundations in cake form

The mechanism of colour change during the pigment dispersion process and during powder application to the skin surface was studied by examining the colour extension properties of Yellow. Red , and Black iron oxides in white powder bases. A new measure for the evaluation of the degree of colour extension was devised. This measure corresponded well with human visual sensation, and was found to be useful for comparing the rates of colour extension of pigments. The rate of colour extension of pigments was found to vary in the order: Yellow acicular Red granular Red Black. This result explains colour darkening and the change towards reddish tones during the pigment dispersion process, because Yellow extends fully in the early stage of the process but Red , especially in granular form, and Black continue to extend even in the later stage. Acicular Red iron oxide is more favourably employed than the granular form to attain sufficient colour extension of foundations with lower energy expenditure, and to decrease the discrepancy between the cake colour and the colour of applied powder.
Le développement des oxydes de fer et effet sur les nuances des fonds de teint compacts     

Effect of TiB2 and Boron Additions on the Stability of Wurtzite-Type Boron Nitride at High Temperatures and Pressures

Shock-synthesized wurtzite-type BN(w-BN) and mixtures of w-BN–TiB₂ and w-BN–ß were treated at high temperatures and pressures. The effect of TiB₂ and boron additions on the transformation of w-BN to zinc blende-type BN(z-BN) was studied at 1000° to 2200°C and 55 to 68 kbars. The formation region of z-BN was shifted toward higher temperatures by TiB₂ additions and toward lower temperatures by boron additions.     

Very low threshold current density of 1.3-/spl mu/m-range GaInNAsSb-GaNAs3 and 5 QWs lasers

The dependence of the threshold current density on the number of wells for 1.3-/spl mu/m-range edge emitting lasers using GaInNAsSb novel material, at which the incorporation of the small amount of Sb make the two-dimensional growth condition wide, is studied. The lowest record ever reported for the threshold current density per well (Jth A/cm/sup 2//well@L=900 /spl mu/m) for 3 QWs lasers was achieved. GaInNAs-based 5 QWs lasers with the very low threshold current density per well of 160 A/cm/sup 2/ were successfully grown for the first time. Therefore, no significant deterioration of Jth is observed even though the number of wells increased up to 5. Since Jth of 5 QWs doesn't increased rapidly compared to SQW and 3 QWs as decreasing the cavity length, it is considered that lower Jth can be obtained by utilizing 5 QWs in devices such VCSELs which use short cavity length.     

Diagnosis Criterion of Abnormality of Transformer Winding by Frequency Response Analysis (FRA)

Frequency response analysis (FRA) is a powerful technique to detect internal abnormalities within power transformers. However, diagnosis criteria of power transformers by FRA have not been fully established yet. In this paper, a new evaluation method of degree of identification between two transfer functions is proposed. In the proposed method, a frequency window is employed and cross‐correlation factor is calculated with moving the window. Furthermore, the proposed method is applied to transfer functions of real transformers with or without some abnormalities. Based on this discussion, objective criteria for diagnosis of abnormalities of transformer windings by FRA are proposed. The proposed criteria are based on a few data of transformers with some abnormalities. Therefore, the proposed criteria are tentative and they would be improved by accumulation of further data.     

Partial Oxidation of Methane to Synthesis Gas Over Ru-Loaded Y2O3 Catalyst

Ru-loaded Y₂O₃ catalyst was investigated for the partial oxidation of methane to synthesis gas. Ru(0.5 wt%)/Y₂O₃ catalyst afforded a high CH₄ conversion of 27% at a CH₄:O₂ ratio of 5 to give nearly a 1:2 ratio of CO and H₂ with a selectivity of 75% at 873 K. Ru(0.5 wt%)/Y₂O₃ catalyst maintained high catalytic activity over 10 h in the partial oxidation of methane. Carbon deposition of the catalyst surface in the reaction of CH₄ was examined by thermogravimetric analyses, and it was found that no carbon deposition occurred on the Ru(0.5 wt%)/Y₂O₃ catalyst. The synthesis-gas production proceeded basically via a two-step reaction consisting of methane combustion to give H₂O and CO₂, followed by the reforming of methane from CO₂ and steam.     

Microstructure of ion-implanted region in TiNi alloy

TiNi alloy samples implanted with various fluences of 3 MeV Cu²⁺ ions were characterized by transmission electron microscope (TEM) and X-ray diffractometer. Cross-sectional TEM images of the samples showed that amorphous region was seen at the fluence of 10¹⁴ ions cm^?2 in case of ion implantation at 300 K of the substrate temperature, but in case of ion implantation at 100 K it did not appear even at 10¹⁵ ions cm^?2. These results were also confirmed by X-ray diffraction profiles of the same samples. Consequently, the extent of microstructure change of TiNi alloy by ion implantation was different depending on the substrate temperature.     

Room temperature continuous-wave operation of GaInNAs/GaAs VCSELsgrown by chemical beam epitaxy with output power exceeding 1 mW

The authors present a near 1200 nm wavelength vertical-cavity surface-emitting laser (VCSEL) the active region of which is formed by GaInNAs/GaAs quantum wells grown by chemical beam epitaxy. Room temperature continuous-wave operation has been demonstrated with a high slope efficiency of 0.23 W/A, a high output power of over 1.0 mW, and a singlemode output power of 0.34 mW. The fabricated devices with different aperture sizes show low threshold currents of 1.2-2.1 mA and a record low threshold current density of 2.6 kA/cm² in GaInNAs VCSELs     

Criteria for versatile GaN MOVPE tool:high growth rate GaN by atmospheric pressure growth

Growth rate has a direct impact on the productivity of nitride LED production.Atmospheric pressure growth of GaN with a growth rate as high as 10μm/h and also Al_0.1Ga_0.9N growth of 1μm/h by using 4 inch by 11 production scale MOVPE are described.XRD of（002） and（102） direction was 200 arcsec and 250 arcsec, respectively.Impact of the growth rate on productivity is discussed.