首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   3篇
  免费   1篇
轻工业   1篇
一般工业技术   2篇
自动化技术   1篇
  2022年   2篇
  2021年   1篇
  2016年   1篇
排序方式: 共有4条查询结果,搜索用时 15 毫秒
1
1.

Financial theory could introduce a fractional differential equation (FDE) that presents new theoretical research concepts, methods and practical implementations. Due to the memory factor of fractional derivatives, physical pathways with storage and inherited properties can be best represented by FDEs. For that purpose, reliable and effective techniques are required for solving FDEs. Our objective is to generalize the collocation method for solving time fractional Black–Scholes European option pricing model using the extended cubic B-spline. The key feature of the strategy is that it turns these type of problems into a system of algebraic equations which can be appropriate for computer programming. This is not only streamlines the problems but speed up the computations as well. The Fourier stability and convergence analysis of the scheme are examined. A proposed numerical scheme having second-order accuracy via spatial direction is also constructed. The numerical and graphical results indicate that the suggested approach for the European option prices agree well with the analytical solutions.

  相似文献   
2.
3.

The present study focuses on pure and antimony (Sb)-doped tin oxide thin film and its influence on their structural, optical, and electrical properties. Both undoped and Sb-doped SnO2 thin films have been grown by using simple, inexpensive pyrolysis spray technique. The deposition temperature was optimized to 450 °C. X-ray diffractions pattern have revealed that the films are polycrystalline and have tetragonal rutile-type crystal structure. Undoped SnO2 films grow along (110) preferred orientation, while the Sb-doped SnO2 films grow along (200) direction. The size of Sb-doped tin oxide crystals changes from 26.3 to 58.0 nm when dopant concentration is changed from 5 to 25 wt%. The transmission spectra revealed that all the samples are transparent in the visible region, and the optical bandgap varies between 3.92 and 3.98 eV. SEM analysis shows that the surface morphology and grain size are affected by the doping rate. All the films exhibit a high transmittance in the visible region and show a sharp fundamental absorption edge at about 0.38–0.40 nm. The maximum electrical conductivity of 362.5 S/cm was obtained for the film doped with 5 wt% Sb. However, the carrier concentration is increased from 0.708?×?1018 to 4.058?×?1020 cm3. The electrical study reveals that the films have n-type electrical conductivity and depend on Sb concentration. We observed a decrease in sheet resistance and resistivity with the increase in Sb dopant concentration. For the dopant concentration of 5 wt% of Sb in SnO2, the Rs and ρ were found minimum with the values of 88.55 (Ω cm?2) and 2.75 (Ω cm), respectively. We observed an increase in carrier concentration and a decrease in mobility with the addition of Sb up to 25 wt%. The highest figure of merit values 2.5?×?10–3 Ω?1 is obtained for the 5wt% Sb, which may be considered potential materials for solar cells' transparent windows.

  相似文献   
4.
Journal of Materials Science: Materials in Electronics - Organic pollutants generated from different industrial sources cause soil and water pollutions, which creates an ecological imbalance. Metal...  相似文献   
1
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号