Creation and electrical properties of p-Cu2ZnSnS4/n-Si heterojunctions

Technical Physics Letters - Anisotype p-Cu2ZnSnS4/n-Si heterojunctions have been manufactured for the first type by sulfidation of base-metal layers predeposited onto polycrystalline silicon...     

Formation of Manganese Silicide Films on Silicon

The formation of manganese silicide films during thermal annealing of Mn/Si structures is studied. The temperature range of silicide formation is determined. Between 400 and 800°C, the reaction between Mn and Si yields MnSi. The samples annealed at 800–1000°C consist of MnSi and the higher manganese silicide MnSi_1.75. Above 1000°C, the films consist of MnSi_1.75 and the metal-rich phase Mn₅Si₃.     

Photoelectric Properties of MnSi Films

The spectral response and photoconductivity decay kinetics of polycrystalline MnSi films grown on single-crystal Si were studied. The films were found to be photosensitive at shorter wavelengths in comparison with single-crystal MnSi. The results suggest that MnSi films are potential candidates for use in high-speed device structures.     

Features of current carriers that cause thermo-photo conductivity in manganese silicide[H1]

The relationship between temperature and electroconductivity of the higher manganese silicide Mn₄Si₇(MnSi_1.75) has been investigated. Using the nonmonotonic relationship between electric conductivity and temperature, a model of electronic junctions involving tunneling, jumping, subzone-zone, and indirect zone-zone transitions is proposed.