Effect of gamma irradiation on the optical properties of CR-39 polymer

The UV-Visible absorption spectra of virgin and gamma irradiated (20–800 kGy) CR-39 polymer have been deduced by using Shimadzu Double beam Double Monochromator UV-Visible Spectrophotometer (UV-2550). The existence of the peaks, their shifting and broadening as a result of gamma irradiation has been discussed. Finally the indirect and direct band gap in virgin and gamma irradiated CR-39 has been determined. The values of indirect band gap have been found to be lower than the corresponding values of direct band gap.     

Sintering studies of nano-crystalline zinc oxide

Sintering and grain growth of nano-crystalline undoped ZnO has been studied in detail over a wide range of temperature and holding time. Below 800 °C, sintering of over 70% theoretical density is not observed, irrespective of particle size. At 900 °C for 6 h, the nano-crystalline sample sinters to 99% of theoretical density whereas the density for as received sample is 93% of theoretical density. However, at 1300 °C or higher, the densification is found to be much faster and after a few hours becomes independent of holding time. Grain growth studies reveal a similar feature of attaining saturation over holding time. The average saturated grain size is found to be ∼1.5 and ∼2.2 μm at 800 and 900 °C, respectively, while at 1300 °C or higher, it is in between 12 and 13 μm.     

Comparative hall measurements on wet- and dry-oxidized 4H-SiC MOSFETs

Hall measurements have been used to compare the properties of 4H-SiC inversion-mode MOSFETs with “wet” and “dry” gate oxides. While the field-effect mobilities were approximately 3–5 cm²/Vs, the Hall mobilities in 4H-SiC MOSFETs in the wet and dry oxide samples were approximately 70–80 cm²/Vs. The dry-oxidized metal oxide semiconductor field effect transistors (MOSFETs) had a higher transconductance, improved threshold voltage, improved subthreshold slope, and a higher inversion carrier concentration compared to the wet-oxidized MOSFETs. The difference in characteristics between the wet- and the dry-oxidized MOSFETs is attributed to the larger fixed oxide charge in the dry oxide sample and a higher interface trap density in the wet oxide sample.     

An enhanced zone 3 algorithm of a distance relay using transient components and state diagram

Zone 3 of a distance relay is used to provide the remote backup protection in case of the failure of the primary protection. However, the risk of maloperation under stressed conditions such as heavy loading, voltage, and transient instability is quite high. Zone 3 is used in combination with the derivatives of the voltage and current, etc. to prevent maloperation. At times, the impedance characteristics that restrict the tripping area of relay are used to avoid maloperation due to load encroachment. This work presents a novel zone 3 scheme based on combining the steady-state components (i.e., 60 Hz) and the transient components (TCs) using a state diagram that visualizes the sequence of studies that emanate from the sequence of events. The simulation results show that the novel zone 3 distance relay elements using the proposed method operate correctly for the various events.     

Using constancy of distance to estimate position and displacementin space

The problem of computing structure and motion from the observation of points in two distinct images of a scene is considered. The proposed method explicitly utilizes the principle of conservation of distance during rigid-body motion. The formulation is such that it separates the problem of estimating object position from that of determining motion parameters. The equations of invariance of distance for a rigid body are solved for the points' position in space. When these coordinates in space are known, motion parameters are computed in a simple and straightforward manner. Examples are given to illustrate the efficiency of the algorithm     

Heterogeneous Plantinum Nucleation and Crystallization of a Heavy-Metal Fluoride Glass

The effect of controlled heterogeneous nucleation by platinum on the crystallization of a ZrF₄-BaF₂-LaF₃-AlF₃-NaF (ZBLAN) glass was studied. Various levels of platinum were incorporated into this glass by a combination of PtCl₂-doping and melting-atmosphere variation. The effect of doping levels and melting conditions on the incorporation of platinum and the subsequent nucleation of crystals was studied by optical microscopy, scanning electron microscopy, differential scanning calorimetry (DSC), and X-ray diffraction. Increased platinum in the glass resulted in an increased number of nucleation sites for the growth of β-ZrF₄-BaF₂ crystals. Analysis of isothermal and ramp-rate DSC measurements indicated that the crystallization of this glass changed from surface controlled to bulk controlled with an increased number of nuclei. This was confirmed by optical microscopy. In addition, Avrami analysis of the isothermal crystallization data gave an accurate approximation of the number of nuclei in the glass.     

Fabrication of Arsenic Sulfide Optical Fiber with Low Hydrogen Impurities

Arsenic sulfide glass optical fibers typically possess extrinsic absorption bands in the infrared wavelength region associated with residual hydrogen and oxygen related impurities, despite using purified precursors. We report a purification process based on the addition of tellurium tetrachloride (TeCl₄) to the glass. During melting, the chlorine from TeCl₄ reacts with the hydrogen impurities to produce volatile products (e.g., HCl) that can be removed by subsequent dynamic distillation. The processing conditions have been modified accordingly to produce optical fibers with significantly reduced loss due to hydrogen sulfide impurity content (1.5 dB/m).     

Network and device-level impacts: performance and reliability of active I/O storage systems

Distributed active storage architectures are designed to offload user-level processing to the peripheral from the host servers. In this paper, we report preliminary investigation on performance and fault recovery designs, as impacted by emerging storage interconnect protocols and state-of-the-art storage devices. Empirical results obtained using validated device-level and interconnect data demonstrate the significance of the said parameters on the overall system performance and reliability.