排序方式: 共有28条查询结果,搜索用时 15 毫秒
1.
M. K. Bakhadyrkhanov O. É. Sattarov Kh. M. Iliev K. S. Ayupov Tuérdi Umaier 《Semiconductors》2005,39(7):789-791
It is experimentally ascertained that light stimulates the negative magnetoresistance observed in a high electric field in silicon doped with boron and manganese. The optimum conditions (the electric field, temperature, illumination, and resistivity of the material) for observation of the largest magnitude of negative magnetoresistance in (Si:B):Mn are determined. The dependence of the negative magnetoresistance on the concentration of compensating impurity is established. 相似文献
2.
Z. M. Saparniyazova M. K. Bakhadyrkhanov O. E. Sattarov Kh. M. Iliev K. A. Ismailov N. Norkulov D. Zh. Asanov 《Inorganic Materials》2012,48(4):325-328
We have studied the interaction of manganese nanoclusters with sulfur atoms in silicon. The results indicate that both simultaneous
and sequential codoping with manganese and sulfur has little effect on the electrical properties (resistivity, carrier mobility,
and conductivity type) of silicon. There is no extrinsic photoconductivity in the IR spectral region, and the material has
only a small positive magnetoresistance. According to electron paramagnetic resonance data, the material contains only atomic
manganese. Sulfur atoms in the silicon lattice are assumed to facilitate the capture of doubly charged manganese interstitials
(Mn2+) at negatively charged vacancies, resulting in the formation of a multicomponent impurity cluster of composition Si2S2+Mn2− in the silicon lattice throughout the crystal. The optimal thermal annealing conditions for the formation of such clusters
are determined. The ability to produce Si2S2+Mn2− clusters with controlled concentration allows one to tailor the main fundamental parameters of silicon and opens up new possibilities
for such materials in nano- and microelectronic device development. 相似文献
3.
4.
Bakhadyrkhanov M. K. Isamov S. B. Kenzhaev Z. T. Koveshnikov S. V. 《Technical Physics Letters》2019,45(10):959-962
Technical Physics Letters - It has been shown that the doping of the front side of a solar cell with a deep-level p–n junction with nickel atoms increases short-circuit current density Jsc by... 相似文献
5.
Bakhadyrkhanov M. K. Isamov S. B. Zikrillaev N. F. Tursunov M. O. 《Semiconductors》2021,55(6):542-545
Semiconductors - It is shown that in silicon with nanoclusters of manganese atoms, a number of anomalous photoelectric phenomena are observed, such as residual impurity photoconductivity with a... 相似文献
6.
It was observed that the photosensitivity limit and the increase in the photoresponse depend fairly strongly on uniaxial elastic
deformation in compensated Si〈B, Mn〉 crystals.
Pis’ma Zh. Tekh. Fiz. 24, 23–28 (November 26, 1998) 相似文献
7.
Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese 总被引:1,自引:0,他引:1
M. K. Bakhadyrkhanov Kh. Azimkhuzhaev N. F. Zikrillaev A. B. Sabdullaev É. Arzikulov 《Semiconductors》2000,34(2):171-173
Silicon samples doped with boron and compensated by manganese were studied. The conditions for excitation of self-sustained oscillations were established and the parameters of these oscillations were determined. 相似文献
8.
M. K. Bakhadyrkhanov U. Sodikov N. F. Zikrillaev N. Norkulov 《Surface Engineering and Applied Electrochemistry》2007,43(5):395-397
One possible way to create nanosized structures on the basis of the formation of molecules (S++Mn??) and (Se++Mn??) among impurity atoms S, Se, Mn in the silicon lattice is described in the work. Relationships between the concentration of molecules (S++Mn??) and (Se++Mn??) and the concentration of impurity atoms are established. 相似文献
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10.
M. K. Bakhadyrkhanov G. Kh. Mavlonov S. B. Isamov K. S. Ayupov Kh. M. Iliev O. E. Sattarov S. A. Tachilin 《Surface Engineering and Applied Electrochemistry》2010,46(3):276-280
The features of the photoelectric properties of silicon with multicharged nanoclusters of manganese atoms are studied. The
patterns of change in the multiplicity of the charge state of the nanoclusters as a function of the Fermi level position are
determined. It is shown that the samples with the maximum multiplicity of the charge of the nanoclusters exhibit a number
of new physical effects, i.e., anomalously high extrinsic photoconductivity within a range of 3–5 μm, giant residual conductivity,
and photoconductivity stimulated by an electrical field. In samples with a minimal charge state of the nanoclusters, the effect
of anomalously deep infrared quenching of the photoconductivity is observed, the quenching multiplicities of which achieve
6 or 7 orders. The laws for controlling the photoelectric properties of silicon by changing the charge state of the nanoclusters
are determined. 相似文献