Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese

It is experimentally ascertained that light stimulates the negative magnetoresistance observed in a high electric field in silicon doped with boron and manganese. The optimum conditions (the electric field, temperature, illumination, and resistivity of the material) for observation of the largest magnitude of negative magnetoresistance in (Si:B):Mn are determined. The dependence of the negative magnetoresistance on the concentration of compensating impurity is established.     

Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

We have studied the interaction of manganese nanoclusters with sulfur atoms in silicon. The results indicate that both simultaneous and sequential codoping with manganese and sulfur has little effect on the electrical properties (resistivity, carrier mobility, and conductivity type) of silicon. There is no extrinsic photoconductivity in the IR spectral region, and the material has only a small positive magnetoresistance. According to electron paramagnetic resonance data, the material contains only atomic manganese. Sulfur atoms in the silicon lattice are assumed to facilitate the capture of doubly charged manganese interstitials (Mn²⁺) at negatively charged vacancies, resulting in the formation of a multicomponent impurity cluster of composition Si₂S²⁺Mn²⁻ in the silicon lattice throughout the crystal. The optimal thermal annealing conditions for the formation of such clusters are determined. The ability to produce Si₂S²⁺Mn²⁻ clusters with controlled concentration allows one to tailor the main fundamental parameters of silicon and opens up new possibilities for such materials in nano- and microelectronic device development.     

Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction

Technical Physics Letters - It has been shown that the doping of the front side of a solar cell with a deep-level p–n junction with nickel atoms increases short-circuit current density Jsc by...     

Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

Semiconductors - It is shown that in silicon with nanoclusters of manganese atoms, a number of anomalous photoelectric phenomena are observed, such as residual impurity photoconductivity with a...     

Influence of uniaxial compression on the photoconductivity of highly compensated Si〈B, Mn〉

It was observed that the photosensitivity limit and the increase in the photoresponse depend fairly strongly on uniaxial elastic deformation in compensated Si〈B, Mn〉 crystals. Pis’ma Zh. Tekh. Fiz. 24, 23–28 (November 26, 1998)     

Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese

Silicon samples doped with boron and compensated by manganese were studied. The conditions for excitation of self-sustained oscillations were established and the parameters of these oscillations were determined.     

Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

One possible way to create nanosized structures on the basis of the formation of molecules (S⁺⁺Mn^??) and (Se⁺⁺Mn^??) among impurity atoms S, Se, Mn in the silicon lattice is described in the work. Relationships between the concentration of molecules (S⁺⁺Mn^??) and (Se⁺⁺Mn^??) and the concentration of impurity atoms are established.     

Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]<Subscript>4</Subscript>

The features of the photoelectric properties of silicon with multicharged nanoclusters of manganese atoms are studied. The patterns of change in the multiplicity of the charge state of the nanoclusters as a function of the Fermi level position are determined. It is shown that the samples with the maximum multiplicity of the charge of the nanoclusters exhibit a number of new physical effects, i.e., anomalously high extrinsic photoconductivity within a range of 3–5 μm, giant residual conductivity, and photoconductivity stimulated by an electrical field. In samples with a minimal charge state of the nanoclusters, the effect of anomalously deep infrared quenching of the photoconductivity is observed, the quenching multiplicities of which achieve 6 or 7 orders. The laws for controlling the photoelectric properties of silicon by changing the charge state of the nanoclusters are determined.