Polyetherimide-LaNi5 composite films for hydrogen storage applications

This study investigates the preparation of polyetherimide (PEI) – LaNi₅ composites films for hydrogen storage. Prior to the polymer addition, LaNi₅ was ball-milled at different conditions (250, 350, and 450 RPM) and annealed at 500 °C for 1 h under vacuum. The composites were produced with BM-LaNi₅-350 (PEI/LaNi₅-350) and annealed BM-LaNi₅-350 (PEI/LaNi₅-350-TT). Membranes were successfully produced through solvent casting assisted by an ultrasonic bath. The particles dispersion and the film morphology did not change after hydrogenation cycles. In the H₂ sorption experiments at 43 °C and 20 bar, the films stored H₂ without incubation time; both samples reached a capacity of ~0.6 wt%. The H₂ sorption kinetics of PEI/LaNi₅-350 was comparable to that of BM-LaNi₅-350, whereas PEI/LaNi₅-350-TT presented significantly slower kinetics. LaNi₅ oxidation was hindered by PEI, showing that it can be explored to improve metal hydrides air resistance. The results demonstrated that PEI films filled with LaNi₅ are promising materials for hydrogen storage.     

Effects of sex steroids on sensory and motor spinal mechanisms

The male copulatory pattern uses muscles in the penis for erection and penile insertion, the lower trunk for pelvic thrusting, and the sex accessory organs for seminal emission. Organization of the nuclei controlling penile muscles is achieved through cell growth, dendritic arborization, and synaptogenesis, actions dependent on androgen but not estrogen. Testosterone (T) and dihydrotestosterone (DHT) but not estradiol (E2), stimulate pelvic thrusting vigor by synchronizing discharge of motoneurons innervating pelvic muscles. Pelvic thrusting rhythmicity, regulated by spinal interneurons, is produced in female rabbits by E2 or T but not by DHT. Reflex contraction of the seminal vesicles, due to penile insertion, is facilitated by androgen presumably by its effect on preganglionic neurons of the hypogastric nerve, located in the dorsal commissural nucleus.     

Structural properties and electrical behaviour of thin silicon oxynitride layers

Thin SiO₂ and SiO_xN_y layers were grown on silicon using Rapid Thermal Processing (RTP) in either O₂ or N₂O ambient. Subsequent annealing or nitridation was performed in order to improve the electrical stability. The composition of the films, in particular the incorporation of nitrogen and hydrogen, has been studied. We obtained the distribution of states at the Si/insulator interface through the evaluation of CV measurements and investigated the charge trapping in the layers analysing the voltage–time behaviour during Fowler–Nordheim constant current injection. Furthermore, assuming a trap assisted tunneling mechanism, the influence of near interface trap states on the current voltage characteristic was used to derive an effective insulator state distribution.     

Putting it all together – Formal verification of the VAMP

In the verified architecture microprocessor (VAMP) project we have designed, functionally verified, and synthesized a processor with full DLX instruction set, delayed branch, Tomasulo scheduler, maskable nested precise interrupts, pipelined fully IEEE compatible dual precision floating point unit with variable latency, and separate instruction and data caches. The verification has been carried out in the theorem proving system PVS. The processor has been implemented on a Xilinx FPGA. A shorter version of this article with the title “Instantiating uninterpreted functional units and memory system: functional verification of the VAMP” appeared in [8]. The work reported here was done while all the authors were with Saarland University.     

Quantum automata for some multiperiodic languages

We exhibit small size measure-once one-way quantum finite automata (mo-1qfa’s) inducing multiperiodic stochastic events. Moreover, for certain classes of multiperiodic languages, we exhibit: (i) isolated cut point mo-1qfa’s whose size logarithmically depends on the periods; (ii) Monte Carlo mo-1qfa’s whose size logarithmically depends on the periods and polynomially on the inverse of the error probability.     

Silver dissolution on copper-based alloys

Electrical resistivity measurements and scanning electron microscopy was used to study the dissolution of silver on Cu-Ag and Cu-Al-Ag alloys. The results seem to indicate that the dissolution temperature is affected by the addition of aluminium.     

Reibungsversuche mit Krypton bei niedrigen Drücken

Tests of a linear Equation on the Evaluation of Krypton Friction Experiments at low Pressures and Connections to Viscosity Effects The coefficient of viskosity is nearly constant in the region with STP conditions and is independent of the pressure. This coefficient decreases with lowering the pressure until the region of molecular flow is reached. There we have free molecular‐ or vacuum viscosity. Experiments with the friction of gas have to take in the gas between surfaces which are movabel and parallel. Reactions of the gas with the moving surface cannot be neglected. We made our lab‐examinations of gas friction effects between two rotating cylinders. Generally there is a linear equation of the reciprocal values of viscosities and pressures. Our experiments show a region, where this linear relation is valid. This region has a low limit with coming to molecular flow and an upper limit if the gas is warmed up by friction at higher pressures.     

Germanium islands embedded in strained silicon quantum wells grown on patterned substrates

Germanium islands were embedded in strained silicon quantum wells in order to provide an improved electron confinement in vicinity of the islands. Growth was performed on relaxed SiGe layers. Patterned substrates were used, favouring lattice relaxation as well permitting the fabrication of small Ge islands at deposition temperatures above 500 °C. Photoluminescence analysis reveals a strongly reduced dislocation related signal. The low temperature spectra are dominated by intense signals from the germanium islands. The origin of these signals were investigated by removing the islands by etching, analysing reference samples without a silicon quantum well, varying the germanium deposition and the growth temperature.