Highly Transparent,Stretchable, and Self‐Healing Ionic‐Skin Triboelectric Nanogenerators for Energy Harvesting and Touch Applications

Recently developed triboelectric nanogenerators (TENGs) act as a promising power source for self‐powered electronic devices. However, the majority of TENGs are fabricated using metallic electrodes and cannot achieve high stretchability and transparency, simultaneously. Here, slime‐based ionic conductors are used as transparent current‐collecting layers of TENG, thus significantly enhancing their energy generation, stretchability, transparency, and instilling self‐healing characteristics. This is the first demonstration of using an ionic conductor as the current collector in a mechanical energy harvester. The resulting ionic‐skin TENG (IS‐TENG) has a transparency of 92% transmittance, and its energy‐harvesting performance is 12 times higher than that of the silver‐based electronic current collectors. In addition, they are capable of enduring a uniaxial strain up to 700%, giving the highest performance compared to all other transparent and stretchable mechanical‐energy harvesters. Additionally, this is the first demonstration of an autonomously self‐healing TENG that can recover its performance even after 300 times of complete bifurcation. The IS‐TENG represents the first prototype of a highly deformable and transparent power source that is able to autonomously self‐heal quickly and repeatedly at room temperature, and thus can be used as a power supply for digital watches, touch sensors, artificial intelligence, and biointegrated electronics.     

An optimized junctionless GAA MOSFET design based on multi-objective computation for high-performance ultra-low power devices

An analytical investigation has been proposed to study the subthreshold behavior ofjunctionless gates all around （JLGAA） MOSFET for nanoscale CMOS analog applications. Based on 2-D analytical analysis, a new subthreshold swing model for short-channel JLGAA MOSFETs is developed. The analysis has been used to calculate the subthreshold swing and to compare the performance of the investigated design and conventional GAA MOSFET, where the comparison of device architectures shows that the JLGAA MOSFET exhibits a superior performance with respect to the conventional inversion-mode GAA MOSFET in terms of the fabrication process and electrical behavior in the subthreshold domain. The analytical models have been validated by 2-D numerical simulations. The proposed analytical models are used to formulate the objectives functions. The overall objective function is formulated by means of a weighted sum approach to search the optimal electrical and dimensional device parameters in order to obtain the better scaling capability and the electrical performance of the device for ultra-low power applications.     

A compact charge-based model to study the nanoscale undoped double gate MOSFETs for nanoelectronic circuit design using genetic algorithms

The analytical modeling of nanoscale devices is an important area of computer-aided design for fast and accurate nanoelectronic design and optimization.In the present paper,a new approach for modeling semiconductor devices,nanoscale double gate DG MOSFETs,by use of the gradual channel approximation(GC) approach and genetic algorithm optimization technique(GA) is presented.The proposed approach combines the universal optimization and fitting capability of GA and the cost-effective optimization concept of quantum correction,to achieve reliable,accurate and simple compact models for nanoelectronic circuit simulations.Our compact models give good predictions of the quantum capacitance,threshold voltage shift,quantum inversion charge density and drain current.These models have been verified with 2D self-consistent results from numerical calculations of the coupled Poisson-Schrodinger equations.The developed models can also be incorporated into nanoelectronic circuit simulators to study the nanoscale CMOS-based devices without impact on the computational time and data storage.     

加强质量管理、建立健全锅炉压力容器无损检测人员资格考委会质量保证体系

介绍湖南省锅炉压力容器无损检测人员资格考委会在编制考核质量管理手册和操作考试评分细则及准备考核试件和考核设备等方面所做的工作。湖南省考委会是全国省级锅炉压力容器无损检测人员资格考核机构中首家通过劳动部审定验收合格的单位。     

Self-powered pressure sensor for ultra-wide range pressure detection

The next generation of sensors should be self-powered,maintenance-free,precise,and have wide-ranging sensing abilities.Despite extensive research and development in the field of pressure sensors,the sensitivity of most pressure sensors declines significantly at higher pressures,such that they are not able to detect a wide range of pressures with a uniformly high sensitivity.In this work,we demonstrate a single-electrode triboelectric pressure sensor,which can detect a wide range of pressures from 0.05 to 600 kPa with a high degree of sensitivity across the entire range by utilizing the synergistic effects of the piezoelectric polarization and triboelectric surface charges of self-polarized polyvinyldifluoride-trifluoroethylene (P(VDF-TrFE)) sponge.Taking into account both this wide pressure range and the sensitivity,this device exhibits the best performance relative to that of previously reported self-powered pressure sensors.This achievement facilitates wide-range pressure detection for a broad spectrum of applications,ranging from simple human touch,sensor networks,smart robotics,and sports applications,thus paving the way forward for the realization of next-generation sensing devices.Moreover,this work addresses the critical issue of saturation pressure in triboelectric nanogenerators and provides insights into the role of the surface charge on a piezoelectric polymer when used in a triboelectric nanogenerator.