EFFECT OF GRAIN BOUNDARY ON FATIGUE BEHAVIOUR OF Al BICRYSTALS

The effect of grain boundaries on cyclic deformation and fatigue crack growth in aluminumbicrystals has been studied.The effect of a grain boundary is restricted in a narrow area,termed as grain boundary affecting zone(GBAZ),where the incompatible plastic straintreats internal stress which conversely promotes inhomogeneous slip in the area and grainboundary cracking.As an extended stage I crack initiated from a notch approaches the grainboundary under a constant cyclic stress,the crack front branches splits into several pieces,meanwhile,the growth rate of the crack reduces to a minimum value at the center of theGBAZ.Such microstructure-sensitive growth of extended stage I cracks is mainly attributedto the grain boundary-induced crack tip sheilding.     

MIS隧道器件电流-电压特性的数值模拟

本文建立了MLS隧道器件的电流-电压特性的数值模拟程序,提出了一种新的计算方法:龙格-库塔数值积分与边界条件的预估-校正处理相结合的算法.利用建立的程序模拟计算了两种不同氧化层厚度的MIS隧道器件的电流-电压特性.对TiW/Si肖特基二极管,考虑了界面态的静态和动态影响,模拟特性和实验结果相比,令人满意的一致.     

绝缘膜负带电时的表面局部电场与二次电子返回特性

为分析IC多层版图扫描电镜(SEM)对准检测所利用的负带电成像原理,采用Mott弹性散射截面和修正的Bethe非弹性碰撞公式,对点照射入射电子在绝缘膜中的散射过程进行了Monte Carlo模拟,得到负带电绝缘物表面的局部电位分布.在此基础上计算了二次电子从表面出射后在局部场作用下的运动轨迹,获得了SEM像的二次电子信号电流.结果表明,在弱负带电条件下,照射点处表面电位越低,返回表面的二次电子就越多,对应的二次电子信号电流越弱.此结果与SEM实验中图像亮度随照射时间的变化规律相符     

正带电绝缘膜发射的二次电子的轨迹与返回特性

绝缘膜正带电现象在集成电路芯片低能电子束检测方面具有可以利用的前景。采用简化的表面电位分布模型 ,通过数值方法计算了二次电子从正带电绝缘膜表面发射后的运动轨迹 ,分析了初始条件和电位分布形态对轨迹特性的影响。在轨迹计算和考虑二次电子发射概率分布的基础上得到了二次电子受局部电场作用而返回表面时的最大初始动能、分布规律 ,提出了通过简单的一维势垒模型来确定二次电子返回率的方法 ,为分析电子束照射绝缘膜时正带电效应所产生的二次电子信号衬度现象奠定了基础     

Magnetic Multilayers

Magnetic multilayers are artificially structured materials made of ultrathin films of two different mate-rials,alternately ferromagnetic and non-ferromagnetic.They exhibit new magnetic properties differ-ent from those of bulk materials.We review the magnetic properties of metallic magnetic multilayersand focus on interface magnetic anisotropy,giant magnetoresistance and interlayer couplings,whichare of great promise for applications to high density magnetic storage.     

低能电子束照射集成电路芯片时的静态电容衬度分析

在研究低能电子束照射绝缘物时在二次电子返回特性的基础上,通过绝缘物表面照射微区和衬底之间的有效电容,获得了表面电位和二次电子信号电流在表面电荷积累过渡过程中随照射条件的变化关系,建立了电子束照射覆盖有绝缘膜的IC芯片时形成静态电容衬度的理论模型.从理论上分析了电子束照射条件和芯片内部形貌、材料参数对静态电容衬度的影响,解释了在扫描电镜实验中的最大衬度现象及其对应的最佳电子照射条件.     

Cold trapped ions as quantum information processors

In this tutorial we review the physical implementation of quantum computing using a system of cold trapped ions. We discuss systematically all the aspects for making the implementation possible. Firstly, we go through the loading and confining of atomic ions in the linear Paul trap, then we describe the collective vibrational motion of trapped ions. Further, we discuss interactions of the ions with a laser beam. We treat the interactions in the travelling-wave and standing-wave configuration for dipole and quadrupole transitions. We review different types of laser cooling techniques associated with trapped ions. We address Doppler cooling, sideband cooling in and beyond the Lamb-Dicke limit, sympathetic cooling and laser cooling using electromagnetically induced transparency. After that we discuss the problem of state detection using the electron shelving method. Then quantum gates are described. We introduce single-qubit rotations, two-qubit controlled-NOT and multi-qubit controlled-NOT gates. We also comment on more advanced multiple-qubit logic gates. We describe how quantum logic networks may be used for the synthesis of arbitrary pure quantum states. Finally, we discuss the speed of quantum gates and we also give some numerical estimations for them. A discussion of dynamics on off-resonance transitions associated with a qualitative estimation of the weak-coupling regime is included in Appendix A and of the Lamb-Dicke regime in Appendix B.