DNA methylation and developmental genes in lymphomagenesis--more questions than answers?

There is now considerable evidence suggesting that alterations in the DNA methylating machinery play an important role in tumorigenesis and tumour progression. For example, focal hypermethylation and generalised genomic demethylation are features of many different types of neoplasms. It is thought that tumorigenesis and tumour progression may be caused by hypermethylation induced mutational events and silencing of genes which control cellular proliferation and/or demethylation induced reactivation of genes which may only be required during embryological development. Consequently, we have begun to investigate the role of DNA methylation and developmental genes in malignant lymphoproliferative diseases. Previously, in all cases of non-Hodgkins lymphoma and leukemia studied, we have shown that the myogenic developmental gene Myf-3 is abnormally hypermethylated. In this review we discuss the possible significance of these findings since in vitro studies suggest that Myf-3 may play an important role in control of the cell cycle and therefore lymphomagenesis. In vitro and in vivo evidence suggests that PAX genes may also have oncogenic potential. The PAX family of developmental genes are involved in cellular differentiation, proliferation and cell migration. Expression of PAX3 in particular is associated with cellular mobility. Our previous studies have indicated that alternate regional expression of PAX genes may be controlled by DNA methylation. Therefore, we have proposed that abnormal methylation profiles of PAX3 may be associated with neoplastic transformation and/or metastatic potential. Results thus far reveal that the paired box of PAX3 is abnormally hypermethylated and the homeobox abnormally hypomethylated in lymphomas and leukemias. These new findings are consistent with our postulate and support the idea that inappropriate methylation induced activation or inactivation of developmental genes such as Myf-3 and PAX3 play an important role in lymphomagenesis and disease progression and that inspection of the methylation status of other developmental genes is warranted.     

A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors

Metal organic molecular beam epitaxy (MOMBE) was successfully used for the first time to realise a high speed monolithic photoreceiver. Incorporating an InGaAs pin photodetector followed by a transimpedance preamplifier circuit implemented with InP/InGaAs heterojunction bipolar transistors (HBTs), the OEIC photoreceiver had a bandwidth of 6 GHz and a midband transimpedance of 350 Omega . In a system experiment performed at 10 Gbit/s, the receiver exhibited a sensitivity of -15.5 dBm for a bit error rate of 10/sup -9/ at a wavelength of 1.53 mu m. This is the first demonstration of operation of a long wavelength OEIC photoreceiver at this speed.<>     

Penalty interference of nonlinear intra-channel effects and PMD inultra high-speed TDM systems

Penalty interference of nonlinear propagation impairments and polarisation mode dispersion (PMD) caused signal distortions is experimentally investigated     

The influence of packaging materials on RF performance

At frequencies beyond 1 GHz, every component of the IC package contributes to the RF performance, whether required or not. In this work, we study the effects of packaging materials namely, the substrate and the globtop/underfill material on RF performance. We have measured interconnects on two area-array CSPs, the ball grid array and the polymer stud grid array using IMEC’s MCM-D technology. The measurements on the package interconnect show that the losses in the package substrate material account for about 50% of the total losses at 1.8 GHz and this drops to less than 20% at 5.2 GHz. The losses due to impedance mismatch dominate the losses especially below 10 GHz and considerable improvement in performance cannot be obtained by using an improved/expensive substrate. The other study is about the influence of globtop/underfill materials on wirebonds (through 3D EM simulations) as well as on standard 50 Ω MCM-D transmission lines (through experiments). While a higher value of dielectric constant of the globtop/underfill material is better on wirebonds, the influence of loss tangent is felt only above values of 0.1. The influence of seven different globtop/undefill materials on 50 Ω transmission lines has been used to extract their dielectric constant and loss tangent values at 30 GHz. These results are very valuable since one can hardly find the properties of globtop/underfill materials beyond 1 GHz.