Multifunctional WSe2/SnSe2/WSe2 van der Waals heterostructures

Journal of Materials Science: Materials in Electronics - In this study, we report the fabrication of WSe2/SnSe2/WSe2 van der Waals (vdW) heterostructures for potential applications as tunnel...     

Investigating the determinants of low adoption of tablet PCs in Korean firms: Effects of value perception and alternative attractiveness

Many IT innovations show significantly different results from the expectations or market forecasts in the diffusion perspective. Tablet PCs have gained immense attention as useful devices for improving productivity and enhancing customer relationship in firms. However, the diffusion of tablet PCs in firms has been progressing slowly. This study examines the effects of value perception and alternative attractiveness on the diffusion of tablet PCs, using survey data from Korean firms. The results reveal that perceived low benefits, monetary and non-monetary sacrifices are determinants of perceived low value, which in turn influences low adoption intention of tablet PCs. Alternative attractiveness is also significantly associated with perceived low value and low adoption intention. Furthermore, firm innovativeness moderates the relationship between perceived low value and low adoption intention. We discuss the theoretical implications on the adoption barriers of firms from the value adoption model and suggest practical implications for successful diffusion of IT innovations in firms, focused on tablet PCs.     

Tunable optoelectronic properties of a two-dimensional graphene/α-In2Se3/graphene-based ferroelectric semiconductor field-effect transistor

Two-dimensional (2D) materials are promising for future electronic and optoelectronic devices. In particular, 2D material-based photodetectors have been widely studied because of their excellent photodetection performance. Owing to its excellent electrical and optical characteristics, 2D indium selenide (α-In₂Se₃) is a good candidate for photodetection applications. In addition, α-In₂Se₃ samples, including atom-thick α-In₂Se₃ layers, present ferroelectric properties. Herein, we report the fabrication and electrical and optoelectronic properties of multilayered graphene (Gr)/α-In₂Se₃/Gr-based ferroelectric semiconductor field-effect transistors (FeS-FETs). Furthermore, we discuss the physical mechanisms affecting electronic and optoelectronic transport in the Gr/α-In₂Se₃/Gr heterostructure. Large hysteresis was observed in the transfer characteristic curves and it was attributed to the ferroelectric polarization of MTL α-In₂Se₃ and carrier trapping–detrapping effects. The optoelectronic performance of the fabricated FeS-FETs depended on the ferroelectric properties of α-In₂Se₃ and can be easily tuned to achieve the maximum photoresponsivity and specific detectivity of 10 AW^?1 and 4.4?×?10¹² cmHz^1/2 W^?1, respectively.