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The effect of charge on the dihydrogen storage capacity of Sc2–C6H6 has been investigated at B3LYP-D3/6-311G(d,p) level. The neutral system Sc2–C6H6 can store 8H2 with gravimetric density of 8.76 wt %, and one H2 dissociates and bonds atomically on the scandium atom. The adsorption of 8H2 on Sc2–C6H6 is energetically favorable below 155 K. The atom-centered density matrix propagation (ADMP) molecular dynamics simulations show that Sc2–C6H6 can adsorb 3H2 within 1000 fs at 300K. Compared with Sc2–C6H6, the charged systems can adsorb more hydrogen molecules with higher gravimetric density, and all the H2 are adsorbed in the molecular form. The gravimetric densities of Sc2–C6H6+ and Sc2–C6H62+ are 9.75 and 10.71 wt%. Moreover, the maximum adsorption of charged systems are favorable in wider temperature range. Most importantly, the ADMP-MD simulations indicate that Sc2–C6H62+ can adsorb 6 hydrogen molecules within 1000 fs at 300K. It can be found that the gravimetric density (6.72 wt%) of Sc2–C6H62+ still exceeds the target of US Department of Energy (DOE) under ambient conditions.  相似文献   
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Analog Integrated Circuits and Signal Processing - Fault diagnosis of analog circuit is critical to improve safety and reliability in electrical systems and reduce losses. Traditional fault...  相似文献   
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This paper examines what influences trust in mobile social commerce environment. Drawing on trust-based acceptance model (i.e. cognitive and emotional trust) and online review features (i.e. profile photo, linguistic style, and reported experience), we examine how these factors affect trust in mobile social commerce. Hypotheses were tested using survey data. The results of our model showed that there are significant influences of profile photo, reported experience, cognitive, and emotional trust towards trust in ms-commerce. This work contributes to existing literature by examining the roles of previous trust in mobile payments and online reviews on trust in mobile social commerce.  相似文献   
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The recent advancement in high- performance semiconductor packages has been driven by the need for higher pin count and superior heat dissipation. A one-piece cavity lid flip chip ball grid array (BGA) package with high pin count and targeted reliability has emerged as a popular choice. The flip chip technology can accommodate an I/O count of more than five hundreds500, and the die junction temperature can be reduced to a minimum level by a metal heat spreader attachment. None the less, greater expectations on these high-performance packages arose such as better substrate real estate utilization for multiple chips, ease in handling for thinner core substrates, and improved board- level solder joint reliability. A new design of the flip chip BGA package has been looked into for meeting such requirements. By encapsulating the flip chip with molding compound leaving the die top exposed, a planar top surface can be formed. A, and a flat lid can then be mounted on the planar mold/die top surface. In this manner the direct interaction of the metal lid with the substrate can be removed. The new package is thus less rigid under thermal loading and solder joint reliability enhancement is expected. This paper discusses the process development of the new package and its advantages for improved solder joint fatigue life, and being a multichip package and thin core substrate options. Finite-element simulations have been employed for the study of its structural integrity, thermal, and electrical performances. Detailed package and board-level reliability test results will also be reported  相似文献   
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介绍了具有相同音频、视频编码方式的MPEG - 2节目流如何合并成一个节目流。合并后的文件播放流畅并且时间显示正确 ,它包括PATPMT表的重写 ,系统头部分相关字段的更改 ,PCR值的修改 ,解码时间标签 (DTS)和显示时间标签 (PTS)的重新确定 ,传送速率的修改以及添加相应的空包  相似文献   
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Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.  相似文献   
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The accurate prediction of the propagation of a wetting front in an unsaturated soil subjected to surficial infiltration is of practical importance to many geotechnical and geoenvironmental problems. The finite element method is the most common solution technique as the hydraulic soil properties are highly nonlinear. Two important issues are often found to create difficulties in such analyses. First, numerical oscillations are usually observed in the calculated pore pressures at the wetting front. Second, when a reasonable mesh size and time step are used, the elevation of the wetting front may be seriously overpredicted. This paper is focused on the second issue. The under-relaxation (UR) technique used in the iterative process within each time step is found to have a serious impact on rate of convergence with refinement in mesh size and time step. Two different techniques are typically used; the first evaluates the hydraulic conductivity using an average of heads calculated from the preceding time node and the most recent iteration of the current time node (UR1), and the second evaluates the hydraulic conductivity using the average of heads calculated from the two most recent iterations of the current time nodes (UR2). The study shows that UR1, which is adopted in programs such as SEEP/W, ensures that the solution converges rapidly to a stable solution within a time step, but may converge to the wrong wetting front at a given elapsed time unless a sufficiently refined mesh is used. UR2 converges much more slowly within a time step, but the error in the wetting front is smaller than that generated by UR1.  相似文献   
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Norton NBD 200 silicon nitride ceramics were implanted with sodium to a dose of 7.0×1015cm-2 at 72 keV (1 at% peak sodium content at 100 nm). The sodium-implanted samples were further implanted with aluminium to 7.3×1015cm-2 at 87 keV (1 at% peak aluminium content at 100 nm). The implanted and unimplanted samples were oxidized in 1 atm dry oxygen at 1100 and 1300°C for 2–6 h. Profilometry and scanning electron microscopy measurements indicated that sodium implantation led to up to a two-fold increase in the oxidation rate of silicon nitride. The sodium effect was effectively neutralized when aluminium was co-implanted. The opposite effects of sodium and aluminium on the oxidation resistance of silicon nitride can be attributed to their different roles in modifying the structure and properties of the oxide formed. This revised version was published online in November 2006 with corrections to the Cover Date.  相似文献   
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