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Jong Won Chung Yeong Hwan Ko Young Ki Hong Wongeon Song Chulseung Jung Hoyoung Tang Jiyoul Lee Min hyung Lee Bang-lin Lee Jeong-il Park Yongwan Jin Sangyoon Lee Jae su Yu Jongsun Park Sunkook Kim 《Organic Electronics》2014,15(11):3038-3042
We report a novel platform on which we design a flexible high-performance complementary metal–oxide–semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS2) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS2 NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1 nA leakage currents, high performance with a voltage gain of 35 at 12 V supply voltage, and high noise margin (larger than 3 V at 12 V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications. 相似文献
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Jiwon Kim Chulseung Kim Jaeho Lee Yurie Kwon Gwangmoon Eom Gyerae Tak Junghwa Hong 《International Journal of Precision Engineering and Manufacturing》2009,10(4):147-151
Many studies have reported postural control against support surface translation. However, postural control mechanism against
external force perturbation is not clear. Therefore, in this study we investigated the postural recovery against external
force (1∼4Kg) applied to the high-back in health young male subjects (24±4 years). Kinematic data and center of pressure of
the reaction to an unexpected perturbation were analyzed. Experimental results showed that the hill-lifting strategy with
ankle plantarflexion and knee hyperextension was used in all subjects, regardless of the force magnitude. Specifically, maximum
ankle plantarflexion and hip flexion increased with the perturbation force magnitude, the heel vertical excursion and anterior
COP excursion. The results of this study show that the postural control strategy for the external force perturbation is quite
different from that for surface translation and needs further investigation. 相似文献
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Jongyeol Baek Demin Yin Na Liu Inturu Omkaram Chulseung Jung Healin Im Seongin Hong Seung Min Kim Young Ki Hong Jaehyun Hur Youngki Yoon Sunkook Kim 《Nano Research》2017,10(6):1861-1871
Layered semiconductors with atomic thicknesses are becoming increasingly important as active elements in high-performance electronic devices owing to their high carrier mobilities,large surface-to-volume ratios,and rapid electrical responses to their surrounding environments.Here,we report the first implementation of a highly sensitive chemical-vapor-deposition-grown multilayer MoSe2 field-effect transistor (FET) in a NO2 gas sensor.This sensor exhibited ultra-high sensitivity (S =ca.1,907 for NO2 at 300 ppm),real-time response,and rapid on-off switching.The high sensitivity of our MoSe2 gas sensor is attributed to changes in the gap states near the valence band induced by the NO2 gas absorbed in the MoSe2,which leads to a significant increase in hole current in the off-state regime.Device modeling and quantum transport simulations revealed that the variation of gap states with NO2 concentration is the key mechanism in a MoSe2 FET-based NO2 gas sensor.This comprehensive study,which addresses material growth,device fabrication,characterization,and device simulations,not only indicates the utility of MoSe2 FETs for high-performance chemical sensors,but also establishes a fundamental understanding of how surface chemistry influences carrier transport in layered semiconductor devices. 相似文献
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