Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature

Semiconductors - The effect of annealing on the parameters of 4H-SiC Schottky diodes irradiated with electrons at a high temperature is studied for the first time. The electron energy is 0.9 MeV,...     

Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects

Semiconductors - JBS diodes based on 4H-SiC irradiated with electrons and protons are studied. This is carried out by using the methods of capacitance–voltage and current–voltage...     

Propagation of a one-dimensional dark beam in a cubic optically active photorefractive crystal

Propagation of one-dimensional even dark beams in a cubic optically active photorefractive crystal of $\left( {1\bar 10} \right)$ cut has been investigated. The experimental data are compared with the results of numerical simulation. The formation and propagation of a dark beam in a crystal are physically explained.     

A study of the effect of electron and proton irradiation on 4H-SiC device structures

The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration (N _d –N _a ) in the base electrode of Schottky diodes and JBS diodes based on 4H-SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate was 0.07–0.15 cm^–1 under electron irradiation and 50–70 cm^–1 under proton irradiation. It was shown that the current–voltage characteristics of the devices under study remain rectifying at electron irradiation doses of up to ~1017 cm^–2. It was demonstrated that the radiation hardness of the SiC-based devices under study substantially exceeds that of silicon p–i–n diodes with similar breakdown voltages.

     

Correlation between the conditions of fabrication and structure of cotton cellulose for viscose formation

The effect of different regimes for each stage of fabrication of cotton cellulose on its supermolecular structure was evaluated by electron microscopic methods. It was shown that rigorous conditions of fabrication of cotton cellulose cause destruction and loosening of the surface and inner layers of the fibre. This indicates an increase in the reactivity of the cellulose and is promising for processing it into viscose fibres. Translated from Khimicheskie Volokna, No. 1, pp. 22–26, January–February, 1998.