TRANSFER FUNCTION MODEL ORDER AND PARAMETER ESTIMATION

Abstract. A distributed lag model with a rational transfer function is considered. We have demonstrated that the C -table can be used to determine the orders of the rational transfer function and the Padé table can be used to estimate the parameters of an identifiable transfer function. In case the model is not uniquely identified, the C -table reduces possible competing models to only a few for further examination. Padé approximant gives consistent initial values for possibly more efficient iterative procedures to estimate the coefficients of the identified model. Some asymptotic results on the estimation of the C -table and the Padé table are given. A few examples are presented to demonstrate the effectiveness of the method.     

A Novel Mixed-Valence Tetranuclear Iron-Oxygen Clusters in the Organically Templated Iron Phosphate [H3N(CH2)2NH3]2 Fe4O(PO4)4 ċH2O

A novel iron phosphate templated with ethylenediammonium cation, [H₃N(CH₂)₂NH₃]₂ Fe₄ O(PO₄)₄H₂O, has been synthesized hydrothermally and characterized by single-crystal X-ray diffraction, thermo-gravimetric analysis, magnetic susceptibility and Mossbauer spectroscopy. The compound crystallizes in the mono-clinic space group C2 with a= 30.3801(5),b= 10.1204(5),c= 10.0977(5) Å, = 107.712(1)°, V = 2957.5(4) ų and Z = 6. The structure contains 5 and 6-coordinated Fe atoms bridged by ₄-oxygen and PO₄ groups to form two types of mixed-valence Fe₄P₄ cubane-like clusters, which are connected via Fe- O- P bonds to give rise to intersecting channels that house the ethylenediammonium cations and water molecules. Room-temperature Mossbauer data confirm the presence of Fe^II and Fe^III.     

基于TMS320LF2407 DSP控制器语音模块的设计与实现

本文着重介绍了DSP芯片的SPI同步串行接口及SPI与语音转换芯片AD50的通信方式,给出了硬件电路设计。针对AD50的特点,软件设计时通过DSP的SPI口对其进行初始化配置,使其正常工作。DSP在内部对语音信号予以处理并通过AD50输出。     

白藜芦醇磺酸酯的合成及抗氧化、抗肿瘤活性的研究

以白藜芦醇和2, 4-二硝基苯磺酰氯为原料,通过酯化法得到白藜芦醇磺酸酯,通过NMR和LC-MS确定了该化合物结构。以维生素C为阳性对照,研究白藜芦醇磺酸酯对2, 2-联苯基-1-苦基肼(DPPH)自由基和2, 2′-联氮-双-3-乙基苯并噻唑啉-6-磺酸(ABTS)自由基的清除活性和抗氧化活性;噻唑蓝(MTT)法研究其对人肺癌细胞A549的增殖活性。实验结果表明,目标产物收率为33.1%。同时,目标产物在浓度为1.0 mg/mL时,对DPPH自由基和ABTS自由基的清除率分别为31.6%和42.7%,抗氧化活性均高于白藜芦醇,但低于维生素C;目标产物对人肺癌细胞A549具有较好抑制作用,IC50值为(10.2±0.37)μg/mL。     

Methionine restriction up‐regulates the expression of the pi class of glutathione S‐transferase partially via the extracellular signal‐regulated kinase‐activator protein‐1 signaling pathway initiated by glutathione depletion

Understanding the molecular events underlying gene regulation by amino acids has attracted increasing attention. Here, we explored whether the mechanism by which methionine restriction affects the expression of the π class of glutathione S‐transferase (GSTP) is related to oxidative stress initiated by glutathione (GSH) depletion. Rat primary hepatocytes were cultured in an L‐15‐based medium in the absence or presence of 200 μM L ‐buthionine sulfoximine (BSO) or in a methionine‐restricted L‐15 medium supplemented with 20 μM L ‐methionine up to 72 h. BSO and methionine restriction time‐dependently induced GSTP mRNA and protein expression in a similar pattern accompanied by a decrease in the cellular GSH level. The phosphorylation of extracellular signal‐regulated kinase (ERK), but not of c‐Jun NH₂‐terminal kinase and p38, was stimulated by methionine restriction and BSO. Electromobility gel shift assay showed that the DNA‐binding activity of nuclear activator protein‐1 (AP‐1) increased in cells exposed to methionine restriction or BSO. With the ERK inhibitor FR180204, AP‐1 activation and GSTP expression were abolished. Moreover, the induction of GSTP by methionine restriction and BSO was reversed by GSH monoethyl ester and N‐acetylcysteine. Our results suggest that methionine restriction up‐regulates GSTP gene expression, which appears to be initiated by the ERK‐AP‐1 signaling pathway through GSH depletion in rat hepatocytes.     

Investigation of substrate bias effects on the reactively sputtered ZrN diffusion barrier films

ZrN diffusion barrier films were prepared by DC reactive magnetron sputtering under different negative substrate bias. The composition, microstructure, resistivity and diffusion barrier properties of ZrN films, with respect to substrate bias, were studied by means of X-ray diffraction, electron probe microanalyzer, Auger electron spectroscopy, and four point probe method. Results showed that the deposition rate and impurity oxygen content of ZrN films were substantially influenced by the resputtering effects due to the ion bombardment on the film surface. The competition between surface energy and strain energy made the preferred orientation of ZrN films change from (1 1 1) to (2 0 0) and then back to highly (1 1 1) preferred orientation as a function of substrate bias. The application of negative substrate bias could effectively decrease the electrical resistivity due to the decrease of impurity oxygen content and the densification of films, resulting from the moderate-energy ion irradiation. The biased ZrN films could successfully be used as a diffusion barrier layer, between Cu and SiO₂, even up to the high temperature of 800 °C for 30 min.     

Wide-band guided-wave acoustooptic Bragg cells in GaAs-GaAlAs waveguide

One of the key components in future GaAs-based monolithic integrated acoustooptic modules or circuits is an efficient and wide-band acoustooptic Bragg cell. In this paper, design, fabrication, and performance characteristics of compact miniaturized GaAs-GaAlAs waveguide acoustooptic Bragg cells that operate at the acoustic frequency from 190 to 625 MHz are reported. A 201 MHz bandwidth has been obtained with the Bragg cell that employs a single tilted-finger chirp transducer centering at 360 MHz. The acoustic propagation losses in the GaAs-GaAlAs waveguides that were measured using acoustooptic Bragg diffraction as a probe are also presented.     

利用L1范数求取道间时差技术进行地震道插值

本文采用L1范数求取道间时差技术求出剖面上每一样点的时间倾角，然后逐道进行倾角插值。当出现较多空道时，利用L1范数极小准则找出差值道集中绝对值最小点对应的移动时间，求出时间倾角进行插值。此法既能适应线性同相轴插值、非线性同相轴插值，又能适应等道距、非等道距插值。通过对合成记录及实际记录的处理表明，此法具有比常规道内插方法速度快、精度高、适应性强等优点。     

Experimental 0.1 μm p-channel MOSFET withp+-polysilicon gate on 35 Å gate oxide

Very-high-transconductance 0.1 μm surface-channel pMOSFET devices are fabricated with p⁺-poly gate on 35 Å-thick gate oxide. A 600 Å-deep p⁺ source-drain extension is used with self-aligned TiSi₂ to achieve low series resistance. The saturation transconductances, 400 mS/mm at 300 K and 500 mS/mm at 77 K, are the highest reported to date for pMOSFET devices