Densification and Properties of α-Silicon Carbide

Densification of a-Sic powders with no premixed sintering aids (type 1) and with premixed B and C (type 2) was investigated by sintering them at 2150° to 2200°C for 30 min. Flexure strengths, Weibull moduli, and fracture flaws were characterized for type 2 α-SiC only. The results were compared with those for a state-of-the-art sintered a-Sic material.     

Surface tailoring of an ethylene propylene diene elastomeric terpolymer via plasma‐polymerized coating of tetramethyldisiloxane

In the research presented here, we explore the use of a low‐energy plasma to deposit thin silicone polymer films using tetramethyldisiloxane (TMDSO) (H(CH₃)₂? Si? O? Si? (CH₃)₂H) on the surface of an ethylene propylene diene elastomeric terpolymer (EPDM) in order to enhance the surface hydrophobicity, lower the surface energy and improve the degradation/wear characteristics. The processing conditions were varied over a wide range of treatment times and discharge powers to control the physical characteristics, thickness, morphology and chemical structure of the plasma polymer films. Scanning electron microscopy (SEM) shows that pore‐free homogeneous plasma polymer thin films of granular microstructure composed of small grains are formed and that the morphology of the granular structure depends on the plasma processing conditions, such as plasma power and time of deposition. The thicknesses of the coatings were determined using SEM, which confirmed that the thicknesses of the deposited plasma‐polymer films could be precisely controlled by the plasma parameters. The kinetics of plasma‐polymer film deposition were also evaluated. Contact angle measurements of different solvent droplets on the coatings were used to calculate the surface energies of the coatings. These coatings appeared to be hydrophobic and had low surface energies. X‐ray photoelectron spectroscopy (XPS) and photoacoustic Fourier‐transform infrared (PA‐FT‐IR) spectroscopy were used to investigate the detailed chemical structures of the deposited films. The optimum plasma processing conditions to achieve the desired thin plasma polymer coatings are discussed in the light of the chemistry that takes place at the interfaces. Copyright © 2004 Society of Chemical Industry     

Heat transfer from a stretching sheet with uniform suction and blowing

Summary The conjugate problem of heat transfer from an accelerating surface in presence of suction and blowing has been solved analytically. The effects of different parameters on cooling of the surface have been discussed.With 3 Figures     

IndoorSense: context based indoor pollutant prediction using SARIMAX model

Multimedia Tools and Applications - Indoor air pollutants e.g., Carbon dioxide (CO2), Particulate Matter(PM)2.5, PM10, Total Volatile Organic Compounds (TVOC), etc. have a serious impact on human...     

A study of the immobilization of strontium over crystalline titania

The immobilization of strontium over titania was carried out by the method of coprecipitation. From a preliminary study, an appreciable uptake (52.8%) of⁹⁰Sr was observed over preformed titania material. A weighable amount of strontium was coprecipitated with Ti(IV) hydroxide and a maximum of 34 wt% Sr was found to be adsorbed. The leachability of the mixed materials prepared by the addition of 250 and 400 mg Sr²⁺, calcined at 1000 °C, by soxhlet apparatus refluxing at 97 °C and repeated seven times at intervals of 24 h, was found to be of the order of 10^–9 and 10^–5 g cm^–2 d^–1, respectively. X-ray powder diffraction analysis revealed that strontium was immobilized in the crystalline matrix of rutile, which suffered some structural changes with the formation of new phases, SrTiO₃+Sr₂TiO₄ and SrTiO₃, respectively.     

Impression creep characterization of 90Pb-10Sn microelectronic solder balls at subsolvus and supersolvus temperatures

The creep behavior of Pb-10wt.%Sn, a common high-lead solder used in microelectronic packaging, was studied by impression creep testing of ball-gridarray (BGA) solder balls attached to an organic substrate, both above and below the solvus temperature (408 K). Below the solvus temperature, the solder microstructure consists of roughly equiaxed grains of the Pb-rich solid solution α, which contains <5wt.%Sn in solution, with a coarse dispersion of Sn-rich β precipitates. Here, the creep behavior of the solder is controlled by dislocation climb via dislocation core diffusion, yielding n≈4 and Q≈60 kJ/mole. Above the solvus temperature, where the entire 10wt.%Sn is in solution, the creep mechanism becomes controlled by viscous glide of dislocations, limited by solute drag, with n≈3 and Q≈92 kJ/mole. Based on experimental data, creep equations for the as-reflowed solder in the two temperature regimes are given. Comparison of the present data with those available in the literature showed good agreement with the proposed laws.     

Multilayer Hierarchical Model for Mobility Management in IPv6: A Mathematical Exploration

The mobility solution provided by Mobile IPv6 (MIPv6) imposes too much signaling load to the network and enforces large handoff latency to end user. Hierarchical MIPv6 (HMIPv6) on the other hand, is designed by organizing MIPv6 in layered architecture and performs better than MIPv6 in terms of handoff latency and signaling load. Observation shows that, there is still possibility to shrink the handoff latency and the signaling load by further extending HMIPv6 into multiple layers. To explore this possibility of enhanced performance through layered architecture, this paper aimed at mathematical exploration of an N-layered MIPv6 network architecture in order to figure out the optimal levels of hierarchy for mobility management. A widespread analysis is carried out on various parameters such as location update frequency and cost, handoff latency and packet delivery cost. Influence of queuing delay on handoff latency is examined by modeling M/M/1/K queue in the architecture and user mobility is modeled using Markov chain. Analytical investigation reveals that three levels of hierarchy in MIPv6 architecture provide an optimal solution for mobility management.     

Design considerations for p-i-n thyristor structures

An analysis of a high-voltage gate turn-off (GTO) thyristor structure with a double-layered n base (p-i-n structure) is presented. From integration of Poisson's equation, an expression for the forward-blocking voltage at the onset of avalanche breakdown is obtained. Simple design criteria are developed to calculate the optimal thickness and doping density of the n base of a conventional pnpn structure designed for a specific voltage-blocking capability. The same principle is applied to design for the doping densities and thicknesses of the high-resistivity region and the buffer layer of the p-i-n GTO structure. The forward-blocking voltage, as well as the on-state voltage (at a current density of 300 A cm^-2) is predicted for a wide range of base layer thicknesses and doping densities to illustrate the available tradeoff options. Lowest on-state power dissipation for high blocking voltages (>6000 V) is predicted for a doping level of 5×10¹² cm^-3 in the high-resistivity layer