Studies of non-vacuum processing of Cu-chalcogenide thin films

Cu-chalcogenide thin films were prepared using a two stage method: one step electrodeposition of CuISe and CIGSe, and the sulfurisation of CISe to prepare CISSe thin films. The films were deposited on different substrates: Mo and ITO coated glass. The optimum potentials for electrodeposition of CISe and CIGSe films were respectively selected in the range -400 to -550 mV and -650 to -700 mV (vs. SCE). The electrodeposited layers were firmly adhesive. The well known chalcopyrite structure appears after annealing at 400 degrees C under Argon for CISe. The band gap value deduced from the optical measurements is close to 1 eV. To increase this value, addition of gallium in the aqueous electrolytic solution was performed. A band gap value as high as 1.26 eV was recorded on the obtained CIGSe films. Sulfurisation of CISe layers under 5% H2S/Ar atmosphere lead to a shift of the position of the principal XRD peaks indicating the substitution of selenium atoms by sulfur atoms and thus the formation of the quaternary CISSe. Optical measurements performed on this quaternary compound show that our films exhibit a band gap value scaling from 1 eV to 1.4 eV depending on the amount of sulphur incorporated into the layers during the heat treatments.     

Electrodeposition of nanostructured cuprous oxide on various substrates and their electrochemical and photoelectrochemical properties

Journal of Materials Science: Materials in Electronics - Nanostructured Cu2O films have been developed on various conductive substrates (FTO, ITO, and Mo) by a low-cost electrodeposition process...     

Optical and structural properties of TiO2 thin films prepared by sol-gel spin coating

Hydrogen is a renewable and non-polluting fuel. Its production from water using renewable energy is an attractive challenge. In this work we report some results on the preparation of titanium oxide TiO₂ thin films for environmental applications such as water photosplitting. TiO₂ thin films have been prepared by spin coating technique of sol precursor onto glass substrates. The deposited films were annealed at different temperatures in air. The X-ray diffraction (XRD) experiments show that the two well-known anatase and rutile phases were observed depending both on the conditions of deposition and on the temperature of annealing. The best conditions of crystallization were found to be around 400 °C in air. The influence of the number of deposited layer on the crystalline quality of the films was investigated. The surface morphology of the deposited film was characterized by atomic force microscopy (AFM) and scanning electronic microscopy (SEM). The UV-Vis-NIR spectroscopy shows that the film exhibits a high transmission around 90%. The best layers were obtained when concentrated (HCl) was added to the sol solutions. The direct band gap of the films was found to be around 3.7 eV, and their refractive index was found to vary from 2 to 2.4.