Porous AlN ceramic substrates by reaction sintering

A novel approach was undertaken in producing porous AlN microelectronics tapes with high thermal conductivity and low dielectric constant. This method essentially utilised polymer micro-spherical powders that were used as a sacrificial mould to introduce controlled porosity into the green tapes during pyrolysis. The Al₂O₃-rich porous green tapes were then reaction sintered at 1680 °C for 12 h to achieve porous AlN tapes. This work builds upon the previously developed novel reaction sintering process that densified and converted Al₂O₃-rich tapes (Al₂O₃–20 wt.% AlN–5 wt.% Y₂O₃) to AlN tapes at a relatively low sintering temperature of 1680 °C. The sintering behaviour of the porous tapes was investigated, and the effects of the microspheres particle size and volume addition were studied. The microspheres successfully contributed to the significant reduction of tape density by porosity, and this contributed to lowering its dielectric constant. Dielectric constant of the AlN tapes were reduced to about 6.8–7.7 whilst thermal conductivity values were reasonable at about 46–60 W/m K. Coefficient of thermal expansion (CTE) values showed a linear trend according to phase composition, with the porous AlN tapes exhibiting CTE values of (4.4–4.8)×10⁻⁶ °C⁻¹, showing good CTE compatibility with silicon, at 4.0×10⁻⁶ °C⁻¹. The added porosity did not significantly affect the CTE values.     

A Hemispherical Image Sensor Array Fabricated with Organic Photomemory Transistors

Hemispherical image sensors simplify lens designs, reduce optical aberrations, and improve image resolution for compact wide-field-of-view cameras. To achieve hemispherical image sensors, organic materials are promising candidates due to the following advantages: tunability of optoelectronic/spectral response and low-temperature low-cost processes. Here, a photolithographic process is developed to prepare a hemispherical image sensor array using organic thin film photomemory transistors with a density of 308 pixels per square centimeter. This design includes only one photomemory transistor as a single active pixel, in contrast to the conventional pixel architecture, consisting of select/readout/reset transistors and a photodiode. The organic photomemory transistor, comprising light-sensitive organic semiconductor and charge-trapping dielectric, is able to achieve a linear photoresponse (light intensity range, from 1 to 50 W m⁻²), along with a responsivity as high as 1.6 A W⁻¹ (wavelength = 465 nm) for a dark current of 0.24 A m⁻² (drain voltage = −1.5 V). These observed values represent the best responsivity for similar dark currents among all the reported hemispherical image sensor arrays to date. A transfer method was further developed that does not damage organic materials for hemispherical organic photomemory transistor arrays. These developed techniques are scalable and are amenable for other high-resolution 3D organic semiconductor devices.     

ERL: Logic for entity-relationship databases

We develop a logic for entity-relationship databases, ERL, that is a generalization of database logic. ERL provides advantages to the ER model much as FOL (first-order logic) does to the relational model: a uniform language for expressing database schema, integrity constraints, and database manipulation; clearly defined semantics; the capability to express database transformations; and deductive capabilities. We propose three query languages for ER databases called ERRC, ERSQL, and ERQBE, which are generalizations of the relational calculus, SQL, and QBE, respectively. We use example queries and updates to demonstrate the capabilities of these languages. We apply database transformations to introduce the notion of views and to show that both ERRC and ERSQL are relationally complete.Research sponsored in part by the National Science Foundation under grant IRI-8921951 and by Towson State University.     

Tape casting of high dielectric ceramic substrates for microelectronics packaging

The production of ceramic green tapes is integral to the production of multilayer ceramic packages and capacitors. This article presents a batch type process for producing alumina ceramic green tape down to 150 μm thickness. The process parameters relevant to the precise control of the thickness of an aluminabased ceramic tape have been investigated using a float glass tape caster. Results indicate that the cast tape thickness was dependent on the blade gap until it reached a limiting value. This limiting thickness in turn was dependent on the casting speed, with a higher speed producing thinner tapes. Optimal casting was shown to exist when the blade gap was set at or beyond the limiting value, with the casting speed the controlling factor for the final thickness.     

Probing the photoresponse of individual Nb2O5 nanowires with global and localized laser beam irradiation

Photoresponse of isolated Nb(2)O(5) nanowires (NW) padded with platinum (Pt) at both ends were studied with global irradiation by a laser beam and localized irradiation using a focused laser beam. Global laser irradiation on individual NW in ambient and vacuum conditions revealed photocurrent contributions with different time characteristics (rapid and slowly varying components) arising from defect level excitations, thermal heating effect, surface states and NW-Pt contacts. With a spot size of < 1 μm, localized irradiation highlighted the fact that the measured photocurrent in this single NW device (with and without applied bias) depended sensitively on the photoresponse at the NW-Pt contacts. At applied bias, unidirectional photocurrent was observed and higher photocurrent was achieved with localized laser irradiation at reverse-biased NW-Pt contacts. At zero bias, the opposite polarity of photocurrents was detected when the two NW-Pt contacts were subjected to focused laser beam irradiation. A reduced Schottky barrier/width resulting from an increase in charge carriers and thermoelectric effects arising from the localized thermal heating due to focused laser beam irradiation were proposed as the mechanisms dictating the photocurrent at the NW-Pt interface. Comparison of photocurrents generated upon global and localized laser irradiation showed that the main contribution to the photocurrent was largely due to the photoresponse of the NW-Pt contacts.     

Nanowire lithography: fabricating controllable electrode gaps using Au-Ag-Au nanowires

A method to fabricate nanowire electrodes possessing controllable gaps is described. The method relies on electrochemical deposition and selective chemical etching or heating to selectively remove the Ag segment of Au-Ag-Au nanowires. Because the thickness of the Ag segment directly dictates the size of the nanogap, the gap width can be easily controlled during the nanowire fabrication process. Herein, we demonstrate gaps with 2 microm, 100 nm and 20 nm widths via the above-mentioned approaches. In addition, we observed that small gaps (approximately 20 nm) can be formed through annealing Au-Ag-Au nanowires at 200 degrees C in air. Electrical contact between nanowire electrodes and contact pads is studied. Using nanowire electrodes with a 100 nm gap, we subsequently fabricate organic field effect transistors (FETs) with regioregular poly(3-hexylthiophene).