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M. A. Mintairov V. V. Evstropov N. A. Kalyuzhnyi C. A. Mintairov N. Kh. Timoshina M. Z. Shvartz V. M. Lantratov 《Semiconductors》2012,46(8):1051-1058
A method for determining the series resistance R s of multijunction solar cells is suggested and sub-stantiated. The method uses the presence of a maximum in the dependence of the efficiency on the sunlight concentration ratio ??(X) or in that of the operating voltage on the photogenerated current, V m (J g ). The study employs the concept that, in a limited but practically important range of photogenerated currents (up to the maximum ??), the series resistance can be represented by a fixed quantity that is linear and independent of J g . It is analytically substantiated that this resistance can be found from the formula R S = (E/J g )?? = max, where E = AkT/q and A and J g are local values of the ideality factor and photogenerated current at the maximum ?? (or V m ). It is shown that the value of R s , determined by this method, is independent of the spectral composition of the incident light, which was experimentally confirmed in a study of the photovoltaic characteristics of triple-junction InGaP/GaAs/Ge solar cells. The method is suitable for both multi- and single-junction photoelectric converters. 相似文献
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V. V. Evstropov M. Dzhumaeva Yu. V. Zhilyaev N. Nazarov A. A. Sitnikova L. M. Fedorov 《Semiconductors》2000,34(11):1305-1310
An excess tunnel current in GaP epitaxial nondegenerate p-n junctions on GaP and Si substrates was studied. An important experimental result is that the slope of exponential current-voltage (I–V) characteristic (in lnI–V coordinates) is independent of the width of the space-charge region, i.e., on n-and p-region doping levels. This fact is unexplained by existing models. A dislocation shunt model based on multihop tunneling through a dislocation line, which may be considered as a chain of parabolic potential barriers, is proposed. The density of dislocations predicted by this model is in agreement with the transmission electron microscopy (TEM) observations. 相似文献
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Mintairov M. A. Evstropov V. V. Mintairov S. A. Shvarts M. Z. Kalyuzhnyy N. A. 《Technical Physics Letters》2019,45(11):1100-1102
Technical Physics Letters - An anomaly appearing in the photovoltaic characteristics of triple-junction GaInP/GaAs/Ge and of the corresponding double-junction GaInP/GaAs solar cells at... 相似文献
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M. A. Mintairov V. V. Evstropov S. A. Mintairov R. A. Salii M. Z. Shvarts N. A. Kalyuzhnyy 《Semiconductors》2018,52(10):1244-1248
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V. M. Andreev V. V. Evstropov V. S. Kalinovsky V. M. Lantratov V. P. Khvostikov 《Semiconductors》2009,43(5):644-651
Dependence of the efficiency of single-junction and multijunction solar cells on the mechanisms of current flow in photoactive p-n junctions, specifically on the form of the dark current-voltage characteristic J-V, has been studied. The resistanceless J-V j characteristic (with the series resistance disregarded) of a multijunction solar cell has the same shape as the characteristic of a single-junction cell: both feature a set of exponential portions. This made it possible to develop a unified analytical method for calculating the efficiency of singlejunction and multijunction solar cells. The equation relating the efficiency to the photogenerated current at each portion of the J-V j characteristic is derived. For p-n junctions in GaAs and GaSb, the following characteristics were measured: the dark J-V characteristic, the dependence of the open-circuit voltage on the illumination intensity P-V OC, and the dependence of the luminescence intensity on the forward current L-J. Calculated dependences of potential efficiency (under idealized condition for equality to unity of external quantum yield) on the photogenerated current for single-junction GaAs and GaSb solar cells and a GaAs/GaSb tandem are plotted. The form of these dependences corresponds to the shape of J-V j characteristics: there are the diffusion- and recombination-related portions; in some cases, the tunneling-trapping portion is also observed. At low degrees of concentration of solar radiation (C < 10), an appreciable contribution to photogenerated current is made by recombination component. It is an increase in this component in the case of irradiation with 6.78-MeV protons or 1-MeV electrons that brings about a decrease in the efficiency of conversion of unconcentrated solar radiation. 相似文献
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Mintairov M. A. Evstropov V. V. Mintairov S. A. Shvartz M. Z. Kalyuzhnyi N. A. 《Technical Physics Letters》2020,46(4):332-334
Technical Physics Letters - A relationship has been established between the energy gap width of GaInAs p–n homojunctions and the saturation current. For this purpose, a method was suggested... 相似文献
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