Experimental study of non-stoichiometry in Cd<Subscript>1−x</Subscript>Zn<Subscript>x</Subscript>Te<Subscript>1±δ</Subscript>

In this communication, the latest experimental results are presented on a composition of Cd_1−xZn_xTe_1±δ, both x and δ, determined by the high-precision, vapor-pressure scanning method. The space arrangement of the single-phase solidus volume of Cd_1−xZn_xTe_1±δ in the pressure-temperature-composition (P-T-X) phase space has been derived from direct vapor-pressure measurements in the temperature range up to 1,375 K. From the experimental data for x=0.0, 0.05, 0.1, 0.15, 0.25, 0.5, 0.75, 0.8, 0.9, and 1, the complete phase diagram of Cd_1−xZn_xTe_1±δ was constructed. Transformation of the diagram was traced for the whole range of existence of the Cd_1−xZn_xTe_1±δ solid solution as a function of ZnTe concentration. Increase of ZnTe in the solid solution results in the extension of the homogeneity range and a shift of the solidus toward Te, so that already for x≥0.15 the solidus does not contain the stoichiometric, (n_Cd+n_Zn):n_Te=50 mol.% plane. From detailed experimental studies, maximum non-stoichiometry as a function of the temperature was determined in a wide temperature range for Te and metal solubility. Temperature dependencies of the partial pressures of vapor-phase species for different crystal compositions, X_S=const, were deduced from the vapor-pressure experiment for the x=0.05 section of the diagram. From these results, relationships are derived between crystal composition, vapor pressure, and composition of the conjugated vapor.     

Double perovskite Cs2AgBiBr6 radiation sensor: synthesis and characterization of single crystals

Journal of Materials Science - Single crystals of lead-free halide double perovskite Cs2AgBiBr6 sensor material manifest a remarkable potential for application in radiation detection and imaging....     

Defect structure of Sn-doped CdTe

A complex investigation of defect structure of high-resistivity, Sn-doped CdTe grown by vertical-gradient freeze and Bridgman methods by a number of optical, photoelectrical, and electrical methods was performed. High-resistive and photosensitive material, potentially interesting for fabrication of x- and gamma-ray detectors, was produced in 80% of the crystal volume. A model of energy levels dominating the recombination processes in the material was elaborated, where the role of Sn and Fe-related as well as native defects (Cd vacancy) is discussed.