Photopharmacology of Antimitotic Agents

Antimitotic agents such as the clinically approved vinca alkaloids, taxanes and epothilone can arrest cell growth during interphase and are therefore among the most important drugs available for treating cancer. These agents suppress microtubule dynamics and thus interfere with intracellular transport, inhibit cell proliferation and promote cell death. Because these drugs target biological processes that are essential to all cells, they face an additional challenge when compared to most other drug classes. General toxicity can limit the applicable dose and therefore reduce therapeutic benefits. Photopharmacology aims to avoid these side-effects by introducing compounds that can be applied globally to cells in their inactive form, then be selectively induced to bioactivity in targeted cells or tissue during a defined time window. This review discusses photoswitchable analogues of antimitotic agents that have been developed by combining different photoswitchable motifs with microtubule-stabilizing or microtubule-destabilizing agents.     

Flexible thin-film transistors using multistep UV nanoimprint lithography

A multistep imprinting process is presented for the fabrication of a bottom-contact, bottom-gate thin-film transistor (TFT) on poly(ethylene naphthalate) (PEN) foil by patterning all layers of the metal–insulator–metal stack by UV nanoimprint lithography (UV NIL). The flexible TFTs were fabricated on a planarization layer, patterned in a novel way by UV NIL, on a foil reversibly glued to a Si carrier. This planarization step enhances the dimensional stability and flatness of the foil and thus results in a thinner and more homogeneous residual layer. The fabricated TFTs have been electrically characterized as demonstrators of the here developed fully UV NIL-based patterning process on PEN foil, and compared to TFTs made on Si with the same process. TFTs with channel lengths from 5 μm down to 250 nm have been fabricated on Si and PEN foil, showing channel length-dependent charge carrier mobilities, μ, in the range of 0.06–0.92 cm² V⁻¹ s⁻¹ on Si and of 0.16–0.56 cm² V⁻¹ s⁻¹ on PEN foil.     

InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

High performance InP/InGaAs double heterojunction bipolar transistors (DHBTs) incorporating carbon-doped bases and graded base-collector junctions implemented using a short period superlattice were grown by gas source MBE (GSMBE). Base hole concentrations up to 1.6*10/sup 19/ cm/sup -3/ were obtained, using CCl/sub 4/ as the dopant source. Transistors with 2*10 mu m/sup 2/ emitters achieved f/sub t/ and f/sub max/ values up to 76 and 82 GHz, respectively. These devices demonstrate state of the art values of f/sub max/.<>     

New approaches for household energy conservation—In search of personal household energy budgets and energy reduction options

Large-scale energy reduction campaigns focusing on households generally have two shortcomings. First, an energy reduction campaign is either personalized but time intensive or time extensive but generalized. Second, because only the direct energy requirements are addressed, only 50% of the total household energy requirement is subject to reduction. The other 50%, the indirect energy requirement, is much more difficult to calculate and address and therefore not subject to reduction.

In this paper, we describe a web-based tool that has the potential to overcome both of these shortcomings. The tool addresses direct as well as indirect energy requirements. By means of a simple expert system participants obtain personalized reduction options and feedback on the energy reduced. The tool was tested in Groningen (the Netherlands) with a sample of 300 households, resulting in a direct energy reduction of about 8.5% compared to a control group. The reduction in indirect energy was not statistically significant.     

Retrofitting-new high voltage XLPE cables substitutingpaper-insulated power cables in steel pipes

Many utilities still have paper-insulated pipe type cables in service. In the near future they may have to replace some of these systems due to local increases in electric power demand or aged cable insulation. In many cases the steel pipes are well protected against corrosion and thus suitable for further use. For retrofitting in such installations, XLPE-insulated cables offer several advantages. Felten & Guilleaume Energietechnik AG has developed a new three-core XLPE-insulated 64/110 kV cable with reduced insulation thickness (10 mm), that can be pulled into a pipe. In co-operation with VEW ENERGIE AG, the cable performance is being investigated in a field test, that started in October 1996. This long-term loading cycle test will last for three years. The test voltage, applied between conductor and earth, amounts to 127 kV. The temperature is measured with the help of an optical-fiber measurement system. This device is computer controlled and works as a remote monitoring system     

Increasing semiconductor manufacturing's strategic value to a firm

Manufacturing firms in many North American industries are struggling with whether to continue to produce major components for their systems or end-products. In some instances, the suppliers of these very components are also dealing with whether to produce them or merely design them. Large end-product firms and some semiconductor merchants, for example, are calling into question the internal fabrication of chips. This paper examines what can be done to increase the strategic value of an internal chip facility. It discusses six specific activities many of which focus on better satisfying the needs of a fabricator's internal or external customers. By taking the initiative in implementing these activities fabrication management will have identified a seventh way to add value. The recommendations made here also have general implications for firms that produce major components other than semiconductors, and for companies supplied with these components by strategic partners     

The properties of annealed AlN films deposited by pulsed laser deposition

AlN films deposited on SiC or sapphire substrates by pulsed laser deposition were annealed at 1200°C, 1400°C, and 1600°C for 30 min in an inert atmosphere to examine how their structure, surface morphology, and substrate-film interface are altered during high temperature thermal processing. Shifts in the x-ray rocking curve peaks suggest that annealing increases the film density or relaxes the films and reduces the c-axis Poisson compression. Scanning electron micrographs show that the AlN begins to noticeably evaporate at 1600°C, and the evaporation rate is higher for the films grown on sapphire because the as-deposited film contained more pinholes. Rutherford backscattering spectroscopy shows that the interface between the film and substrate improves with annealing temperature for SiC substrates, but the interface quality for the 1600°C anneal is poorer than it is for the 1400°C anneal when the substrate is sapphire. Transmission electron micrographs show that the as-deposited films on SiC contain many stacking faults, while those annealed at 1600°C have a columnar structure with slightly misoriented grains. The as-deposited films on sapphire have an incoherent interface, and voids are formed at the interface when the samples are annealed at 1600°C. Auger electron spectroscopy shows that virtually no intermixing occurs across the interface, and that the annealed films contain less oxygen than the as-grown films.     

Ajisai Spin Parameter Determination Using Graz Kilohertz Satellite Laser Ranging Data

The spin rate and direction of the spherical satellite Ajisai and its slowdown between October 2003 and June 2005 were determined using Graz full-rate kilohertz satellite laser ranging (SLR) data. The high density of the kilohertz data results in a precise scanning of the satellite's retroreflector panel orientation during the spin motion. Applying spectral analysis methods, the resulting frequencies allow the identification of the arrangement of the involved laser retroreflector panels at any instant in time during the pass. Using this method, the spin rate with a high accuracy (a root mean square of 4.03times10^-4 Hz) and the slowdown of the spin rate during the investigated period with a magnitude of 0.0077497 Hz/year were calculated. These results were obtained in near real time from automatically performed analysis procedures during routine SLR tracking, i.e., day and night observations without any additional hardware     

Complementary integrated circuits on plastic foil using inkjet printed n- and p-type organic semiconductors: Fabrication,characterization, and circuit analysis

Complementary thin-film transistor circuits composed of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS–PEN) and a rylene carboxylic diimide derivative for p- and n-channel thin-film transistors (TFTs) were fabricated on flexible foils. The so-called staggered TFT configuration is used, meaning that the semiconductors layers are deposited last. The work-function of the injecting gold electrodes were modified using several self-assembled monolayers (SAMs). For optimized contacts the mobility of the n- and p-channel TFTs was 0.5 cm²/Vs and 0.2 cm²/Vs, respectively. Strongly degraded performance is obtained when the n-channel material was printed on contacts optimized for the p-channel TFT, and vice versa. This illustrates that for CMOS circuits we need careful work-function engineering to allow proper injection for both electrons and holes. We show for the first time that by using a bimolecular mixture for the SAM we can systematically vary the work function, and demonstrate how this affects the performance of discrete n-type and p-type transistors, as well as CMOS inverters and ring oscillators. Under optimal processing conditions we realized complementary 19-stage ring oscillators with 10 μs stage delay operating at 20 V.