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HO-YOUNG YOEN YOUNG-BAE PARK SHI-WOO RHEE 《Journal of Materials Science: Materials in Electronics》1997,8(3):189-194
Copper (Cu) films were deposited on sputtered TiN with metallorganic chemical vapour deposition (MOCVD) from (hexafluoroacetylacetonate)
Cu(I) (vinyltrimethylsilane) [(hfac)Cu(I)(VTMS)] at substrate temperatures of 100–300°C, total pressures of 10–2000 mtorr (1–300 Pa) and bubbler temperature of 50°C
with Ar carrier gas. Cu was deposited in the form of discontinuous islands up to the film thickness of about 100 nm on the
TiN substrate. The orientation of growing films was changed from random orientation to 〈1 1 1〉 with increasing deposition
time and temperature. Increasing temperature increased the surface roughness of the film, and grain coalescence. Resistivity
was increased due to the carbon incorporation from the thermal decomposition of Cu precursor.
This revised version was published online in July 2006 with corrections to the Cover Date. 相似文献
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