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排序方式: 共有750条查询结果,搜索用时 7 毫秒
1.
Yoshitomi T. Saito M. Ohguro T. One M. Momose H.S. Morifuji E. Morimoto T. Katsumata Y. Iwai H. 《Electron Devices, IEEE Transactions on》1998,45(6):1295-1299
A silicided silicon-sidewall source and drain (S4D) structure is proposed for sub-0.1-μm devices. The merit of the S4D structure is that the series resistance of the source and drain is significantly reduced since the silicide layer is attached very close to the gate electrode and the silicon sidewall can be doped very highly. Thus, very high drain current drive can be expected, Another advantage of this structure is that the source and drain extensions are produced by the solid-phase diffusion of boron from the highly doped silicon-sidewall. Thus, shallow extensions with very high doping can be realized. A 75-nm gate length pMOSFET fabricated with this structure is shown to exhibit excellent electrical characteristics 相似文献
2.
A stochastic realization problem of a stationary stochastic process is re-visited, and a new stochastically balanced realization algorithm is derived in a Hilbert space generated by second-order stationary processes. The present algorithm computes a stochastically balanced realization by means of the singular value decomposition of a weighted block Hankel matrix derived by a “block LQ decomposition”. Extension to a stochastic subspace identification method explains how the proposed abstract algorithm is implemented in system identification. 相似文献
3.
Saito M. Yoshitomi T. Hara H. Ono M. Akasaka Y. Nii H. Matsuda S. Momose H.S. Katsumata Y. Ushiku Y. Iwai H. 《Electron Devices, IEEE Transactions on》1993,40(12):2264-2272
A p-MOSFET structure with solid-phase diffused drain (SPDD) is proposed for future 0.1-μm and sub-0.1-μm devices. Highly doped ultrashallow p+ source and drain junctions have been obtained by solid-phase diffusion from a highly doped borosilicate glass (BSG) sidewall. The resulting shallow, high-concentration drain profile significantly improves short channel effects without increasing parasitic resistance. At the same time, an in situ highly-boron-doped LPCVD polysilicon gate is introduced to prevent the transconductance degradation which arises in ultrasmall p-MOSFETs with lower process temperature as a result of depletion formation in the p+-polysilicon gate. Excellent electrical characteristics and good hot-carrier reliability are achieved 相似文献
4.
Toru Ikegami Hideyuki Negishi Dai Kitamoto Keiji Sakaki Tomohiro Imura Masayoshi Okamoto Yasushi Idemoto Nobuyuki Koura Tsuneji Sano Kenji Haraya Hiroshi Yanagishita 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》2005,80(4):381-387
In order to produce highly concentrated bioethanol by pervaporation using an ethanol‐permselective silicalite membrane, techniques to suppress adsorption of succinic acid, which is a chief by‐product of ethanol fermentation and causes the deterioration in pervaporation performance, onto the silicalite crystals was investigated. The amount adsorbed increased as the pH of the aqueous succinic acid solution decreased. The pervaporation performance also decreased with decreasing pH when the ternary mixtures of ethanol/water/succinic acid were separated. Using silicalite membranes individually coated with two types of silicone rubber, pervaporation performance was significantly improved in the pH range of 5 to 7, when compared with that of non‐coated silicalite membranes in ternary mixtures of ethanol/water/succinic acid. Moreover, when using a silicalite membrane double‐coated with the two types of silicone rubber, pervaporation performance was stabilized at lower pH values. In the separation of bioethanol by pervaporation using the double‐coated silicalite membrane, removal of accumulated substances having an ultraviolet absorption maximum at approximately 260 nm from the fermentation broth proved to be vital for efficient pervaporation. Copyright © 2005 Society of Chemical Industry 相似文献
5.
6.
Yoshio Yamashita Hideyuki Jinbo Ryuji Kawazu Takateru Asano Hiroshi Umehara 《Polymer Engineering and Science》1991,31(12):855-859
LMR-UV (“low molecular weight resist for uv lithography”), a naphthoquinone-diazide sulfonic acid ester of a novolak resin, is a negative working resist. The mechanism of insolubilization of LMR-UV is based on the facts that the naphthoquinone-diazide moiety is decomposed to indenecarboxylic acid (polar compound) by photolysis upon UV irradiation and that the irradiated resist film insolubilizes in a non-polar developer. LMR-UV reliably forms 0.6 μm lines and spaces over a reflective substrate with steps by using a g-line stepper having a 0.35 NA lens. 0.6 μm-wide aluminum patterns over topography are obtained by use of g-line exposure and reactive ion etching. By use of an i-line aligner (NA = 0.42), LMR-UV resolves 0.25 μm space patterns with overhang profiles. The profiles are due to the large absorption coefficient of 3.8 μm?1. 0.3 μm wide aluminum patterns are formed by i-line exposure and lift-off metallization. 相似文献
7.
Summary The rate constants for intramolecular excimer formation, kDM, of poly(α-methylstyrene) with different molecular weight were determined by using picosecond pulse radiolysis. Values of
kDM for poly(α-methylstyrene) are a little smaller than those for polystyrene with nearly same molecular weight. It appears to
be mainly due to steric hindrance by methyl substituent of main chain. 相似文献
8.
9.
Inaba S. Okano K. Matsuda S. Fujiwara M. Hokazono A. Adachi K. Ohuchi K. Suto H. Fukui H. Shimizu T. Mori S. Oguma H. Murakoshi A. Itani T. Iinuma T. Kudo T. Shibata H. Taniguchi S. Takayanagi M. Azuma A. Oyamatsu H. Suguro K. Katsumata Y. Toyoshima Y. Ishiuchi H. 《Electron Devices, IEEE Transactions on》2002,49(12):2263-2270
The 35 nm gate length CMOS devices with oxynitride gate dielectric and Ni salicide have been fabricated to study the feasibility of higher performance operation. Nitrogen concentration in gate oxynitride was optimized to reduce gate current I/sub g/ and to prevent boron penetration in the pFET. The thermal budget in the middle of the line (MOL) process was reduced enough to realize shallower junction depth in the S/D extension regions and to suppress gate poly-Si depletion. Finally, the current drives of 676 /spl mu/A//spl mu/m in nFET and 272 /spl mu/A//spl mu/m in pFET at V/sub dd/=0.85 V (at I/sub off/=100 nA//spl mu/m) were achieved and they are the best values for 35 nm gate length CMOS reported to date. 相似文献
10.
Hideyuki Yoshimatsu Hitoshi Kawasaki Akiyoshi Osaka 《Journal of Materials Science》1988,23(1):332-336
Zr-Al organometallic compounds have been spray-dried and heated at temperatures 600 to 1400°C to prepare ZrO2-Al2O3 composite powders. The powders consist of balloon-like particles 0.5 to 2 m in diameter with homogeneously dispersed tetragonal ZrO2 grains 0.1 to 0.2 m in diameter. The tetragonal fraction of ZrO2 in the composite powders is higher than that in the powders prepared from sols of Zr(OBun)4 and Al[OCH(CH3)2]3. The fraction is affected by the organofunctional group in the Zr-Al compounds.Zr(OBun)4 = Zr(OC4Hgn)4; Al[OCH(CH3)2]3 = Al(OPri)3. 相似文献