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排序方式: 共有99条查询结果,搜索用时 15 毫秒
1.
Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates 总被引:1,自引:0,他引:1
Woei-Kai Wang Dong-Sing Wuu Lin S.-H. Han P. Horng R.-H. Ta-Cheng Hsu Huo D.T.-C. Ming-Jiunn Jou Yuan-Hsin Yu Lin A. 《Quantum Electronics, IEEE Journal of》2005,41(11):1403-1409
The use of conventional and patterned sapphire substrates (PSSs) to fabricate InGaN-based near-ultraviolet (410 nm) light-emitting diodes (LEDs) was demonstrated. The PSS was prepared using a periodic hole pattern (diameter: 3 /spl mu/m; spacing: 3 /spl mu/m) on the (0001) sapphire with different etching depths. From transmission-electron-microscopy and etch-pit-density studies, the PSS with an optimum pattern depth (D/sub h/=1.5 /spl mu/m) was confirmed to be an efficient way to reduce the thread dislocations in the GaN microstructure. It was found that the output power increased from 8.6 to 10.4 mW, corresponding to about 29% increases in the external quantum efficiency. However, the internal quantum efficiency (@ 20 mA) was about 36% and 38% for the conventional and PSS LEDs, respectively. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the PSS. Finally, better long-time reliability of the PSS LED performance was observed. 相似文献
2.
Laser technique application to polycrystalline silicon thin-film solar cell fabrication on glass substrates has received appreciable attention. In this paper, a laser-doping technique is developed for plasma-deposited amorphous silicon film. A process involving recrystallization, phosphorous diffusion and antireflection coating can be achieved simultaneously using the laser annealing process. The doping precursor, a phosphorous-doped titanium dioxide (TiO2) solution, is synthesized using a sol-gel method and spin-coated onto the sample. After laser irradiation, the polycrystalline silicon grain size was about 0.5∼1.0 μm with a carrier concentration of 2 × 1019 cm− 3 and electron mobility of 92.6 cm2/V s. The average polycrystalline silicon reflectance can be reduced to a value of 4.65% at wavelengths between 400 and 700 nm, indicating the upper TiO2 film of antireflection coating. 相似文献
3.
We describe the excimer-laser-induced crystallization of microcrystalline silicon films deposited by plasma-enhanced chemical vapor deposition (PECVD). Microcrystalline silicon films containing 2 at.% hydrogen can be used as precursor films for the laser recrystallization process without a dehydrogenation step, and provide a wider laser energy fluence process window than the previous explosive recrystallization for low temperature polysilicon (poly-Si) thin-film transistor (TFT) fabrication. Ellipsometry, transmission electron microscopy (TEM), and atomic force microscopy (AFM) are used to evaluate the laser irradiated films. Specially, we describe using atomic force microscopy to obtain plane-view grain microstructure images. 相似文献
4.
Hai‐Lin Lu Chong‐Hong Chen Jong‐Wuu Wu 《Quality and Reliability Engineering International》2004,20(6):579-586
This study proposes an alternative to the weighted least‐squares (WLS) procedure for estimating the shape parameter of the Weibull distribution. Bergman (Journal of Materials Science Letters 1986; 5:611–614), Faucher and Tyson (F&T) (Journal of Materials Science Letters 1988; 7:1199–1203) suggested using different WLS approaches for Weibull parameters. However, the simulation results show that the novel approach is better than that of Bergman, and is not significantly different from that of F&T. Furthermore, the novel approach is also simpler and easier to comprehend. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
5.
Jong‐Wuu Wu Hai‐Lin Lu Chong‐Hong Chen Chun‐Hsien Wu 《Quality and Reliability Engineering International》2004,20(6):607-616
This paper proposes a simple and exact method for conducting a statistical test about the shape parameter of the new two‐parameter lifetime distribution with a bathtub‐shaped or increasing failure rate function, as well as an exact confidence interval for the same parameter. The necessary critical values of the test are given. The method provided in this paper can be used for type II right censored data. Moreover, Monte Carlo simulation and an example are used to compare this new method to the existing approach of Chen (Statistics and Probability Letters 2000; 49:155–161). Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
6.
Abstract The heteroepitaxial growth of InP on Si by low pressure metalor‐ganic chemical vapor deposition is reported. Trimethylindium‐trimethylphosphine adduct was used as In source in this study. From X‐ray and SEM examinations, good crystallinity InP epilayers with mirror‐like surfaces can be grown directly on (100) and (111) p‐type Si substrates. Carrier concentration profile shows that the carrier distribution in the InP epilayer is very uniform. The efficient photo‐luminescence compared with that of InP homoepitaxy shows the good quality of InP/Si epilayers. 相似文献
7.
Abstract One of the key design issues for the next generation of IP routers is the IP lookup mechanism. IP lookup is an important action in a router, that is, to find the next hop for each incoming packet with a longest‐prefix‐match address in the routing table. In this paper, we propose an IP lookup mechanism with the number of memory accesses for an IP lookup being one in the best case and being four in the worst case. The forwarding table needed by our mechanism is small enough to fit in the SRAM. For example, a large routing table with 40000 routing entries can be compacted to a forwarding table of 260KBytes in our scheme. 相似文献
8.
Huang S.Y. Horng R.H. Liu P.L. Wu J.Y. Wu H.W. Wuu D.S. 《Photonics Technology Letters, IEEE》2008,20(10):797-799
Green light vertical-conducting resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on a Cu substrate by the combination of laser lift-off and plating techniques. The structure of the RCLED/Cu is consisted of the InGaN-GaN multiple-quantum-well active layer between three layers of the dielectric TiO-SiO distributed Bragg reflector as a top mirror and an Al metal layer as a bottom mirror. It was found that the RCLED with Cu substrate presents superior thermal dissipation and a stable electroluminescence emission peak wavelength (507 nm) under a high injection current. It is attributed to the Cu substrate providing a good heat sink and effectively reducing the junction temperature. 相似文献
9.
Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates 总被引:1,自引:0,他引:1
D.S. Wuu W.K. Wang W.C. Shih R.H. Horng C.E. Lee W.Y. Lin J.S. Fang 《Photonics Technology Letters, IEEE》2005,17(2):288-290
Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS. 相似文献
10.
Pharaoh Fellow Mwale Chi-Hsin Lee Peng-Nien Huang Sung-Nien Tseng Shin-Ru Shih Hsin-Yuan Huang Sy-Jye Leu Yun-Ju Huang Liao-Chun Chiang Yan-Chiao Mao Wei-Chu Wang Yi-Yuan Yang 《International journal of molecular sciences》2021,22(8)
Coxsackievirus A16 (CA16) is one of the major causative agents of hand, foot, and mouth disease (HFMD). Children aged <5 years are the most affected by CA16 HFMD globally. Although clinical symptoms of CA16 infections are usually mild, severe complications, such as aseptic meningitis or even death, have been recorded. Currently, no vaccine or antiviral therapy for CA16 infection exists. Single-chain variable fragment (scFv) antibodies significantly inhibit viral infection and could be a potential treatment for controlling the infection. In this study, scFv phage display libraries were constructed from splenocytes of a laying hen immunized with CA16-infected lysate. The pComb3X vector containing the scFv genes was introduced into ER2738 Escherichia coli and rescued by helper phages to express scFv molecules. After screening with five cycles of bio-panning, an effective scFv antibody showing favorable binding activity to proteins in CA16-infected lysate on ELISA plates was selected. Importantly, the selected scFv clone showed a neutralizing capability against the CA16 virus and cross-reacted with viral proteins in EV71-infected lysate. Intriguingly, polyclonal IgY antibody not only showed binding specificity against proteins in CA16-infected lysate but also showed significant neutralization activities. Nevertheless, IgY-binding protein did not cross-react with proteins in EV71-infected lysate. These results suggest that the IgY- and scFv-binding protein antibodies provide protection against CA16 viral infection in in vitro assays and may be potential candidates for treating CA16 infection in vulnerable young children. 相似文献