Crystallographic characteristics and microwave dielectric properties of Ni-modified MgTa2O6 ceramics

Ni²⁺ modified MgTa₂O₆ ceramics with a trirutile phase and space group P4₂/mnm were obtained. The correlations between crystallographic characteristics and microwave dielectric performance of MgTa₂O₆ ceramics were systematically studied based on the chemistry bond theory (PVL theory) for the first time. The results indicate that the introduction of Ni²⁺ causes a change in polarizability and the Mg–O bond ionicity, which contributes to the variation of dielectric constant. Moreover, the lattice energy, and packing fraction, full width at half maximum of the Raman peak of Ta–O bond, as the quantitative characterization of crystallographic parameters, regulate the dielectric loss of MgTa₂O₆ ceramics in GHz frequency band. In addition, the study of sintering behavior shows that the densification and micromorphology are the crucial factors affecting the microwave dielectric performance. Typically, Ni²⁺ doping on the A-site of MgTa₂O₆ can effectively promote the Q × f values to 173,000 GHz (at 7.43 GHz), which ensures its applicability in 5G communication technology.     

Investigation of crystal characteristics,Raman spectra,and microwave dielectric properties of Mg1-xZnxTa2O6 ceramics

Mg_(1-x)Zn_xTa₂O₆ (x = 0.00?0.08) dielectric ceramics were synthesized via the traditional solid-state reaction method. We used XRD and Rietveld refinement to demonstrate that a pure Mg_(1-x)Zn_xTa₂O₆ phase with trirutile structure was formed. Zn²⁺ substitution helped to decrease the Raman full width at half width of the A_1g mode at 703 cm^?1, which resulted in an increase in the order and rigidity of the TaO₆ octahedron, this in turn contributed to improving the Q×f values. Additionally, the introduction of Zn²⁺ significantly promoted grain growth and increased the dense, and the molecular polarizability, these factors lead to a higher permittivity. Moreover, enhanced Ta-O bond energy resulted in a more stable TaO₆ octahedron in the Mg_(1?x)Zn_xTa₂O₆ system, which contributed to enhanced τ_f values via substitution of Zn²⁺ doped on the A-site. Correspondingly, the microwave dielectric properties were significantly improved for 0.04-doped samples, obtaining: ε_r = 27, Q × f = 185,000 GHz (at 7.47 GHz), τ_f =32 ppm/°C.     

Bi:YIG纳米薄膜的磁光特性

用射频磁控溅射和快速退火方法制备了纳米量级的Bi:YIG薄膜,研究了薄膜的磁光特性.当晶粒尺寸从150 nm降到80 nm时,透射率和Faraday角的值分别从75%和3.6°变成了80%和4.0°.结果表明:高的透射率和大Faraday角可以在晶粒尺寸为纳米量级的薄膜中共存.     

Ti4+ modified MgZrNb2O8 microwave dielectric ceramics with an ultra-high quality factor

Ti⁴⁺-modified MgZrNb₂O₈ (MgZr_1-xTi_xNb₂O₈, x = 0, 0.1, 0.2, 0.3, 0.4) ceramics were synthesized using the traditional solid-state reaction method. Pure MgZr_1–xTi_xNb₂O₈ was detected without any secondary phase via the X-ray diffraction patterns. According to the sintering behavior and the surface morphology results, the introduction of Ti⁴⁺ reduced the sintering temperature and promoted the grain growth. The correlations between the dielectric properties and the crystal structure were analyzed through the Rietveld refinement and Raman spectroscopy. The slight shifts of the Raman peaks, corresponding to different vibration modes, were induced by the substitution of Ti⁴⁺ for Zr⁴⁺ and related to the improved quality factor. In general, the sample of MgZr_0.9Ti_0.1Nb₂O₈ sintered at 1320°C for 4 h exhibited promising microwave dielectric properties with an ultra-high Q × f value of 130 123 GHz (at 7.308 GHz, 20°C), which is potential for 5G communication applications.     

YIG带阻滤波器的研究进展

随着通信与雷达系统在高频、宽带和小型化方面的高速发展,钇铁石榴石（YIG）带阻滤波器是其发展道路中不可缺少的磁调谐器件。该文针对YIG带阻滤波器阐述了YIG带阻滤波器设计原理,介绍了近年来几种典型谐振器结构的发展状况,并分析了这几种结构的优缺点。     

微型膜状高频变压器的设计及性能分析

基于高频变换器的设计基础，建立了一套膜状高频变压器的设计算法，并成功地运用计算机实现了这些算法，建立了基于Ｗｉｎｄｏｗｓ３．Ｘ的膜状变压器设计软件；。按理论设计模型，制作了不同尺寸的微型膜状变压器，其Ｑ值曲线，电感曲线和输出电压曲线反映出该变压器有良好的性能。     

Magnetic Properties of Nanometer-Scale NiZnCu Ferrite Thin Films Fabricated by Spray-Spin-Heating-Coating Method

A new nanometer-scale ferrite thin film with excellent high-frequency characteristics has been developed by the spray-spin-heating-coating method. The effects of the ion synthesis mechanism, chemical stoichiometry, fabrication method, and doping content on the magnetic properties and microstructure of the thin films have been analyzed. The films formed between 75℃ and 90℃ by spray-spin-heating-coating methods was discovered with fine grain size of about 21 nm, high saturation magnetization (4πMs) of about 6.5 kGs, coercivity of about 9.8 Oe, as well as initial permeability of about 14.0. These films can be widely used in radio-frequency integrated circuit devices.     

机械臂与环境交互的位置/力切换抑制振动方法

当机械臂执行位置/力的混合跟踪任务时，位置控制一般用于机械臂的自由运动阶段，力控制一般用于约束运动阶段。这种位置/力切换的控制结构既能实现与环境接触前对机械臂位置的精确控制，也能保证接触后对期望控制力的准确跟踪。由于开关系统本身存在的切换不稳定性，机械臂在以一定的速度与环境接触时，机械臂执行器会在环境表面振动甚至弹跳。针对此问题，提出了一种半主动阻尼阻抗学习方法，该方法主要包含两部分：基于位置/力切换控制的半主动阻尼控制器；基于一种逆秩拟牛顿法（broyden fletcher goldfarb shanno，简称BFGS）的阻抗学习算法，根据学习到的环境参数调节半主动阻尼，实现机械臂在接触面的振动抑制和平稳过渡。在仿真及实验中，应用提出的方法让机械臂与不同环境交互，结果表明：该方法能很好地抑制接触过渡阶段的超调力，并防止机械臂在切换过程中的振动，实现了柔顺接触和平稳过渡。     

一种新型的X波段圆极化微带天线

该文采用双层方形贴片开对角槽的结构设计了一种新型的应用于X波段的圆极化微带贴片天线。通过仿真优化,天线轴比<3dB的带宽480 MHz,增益达到6.29dB,反射系数s11<-10dB的相对阻抗带宽达到6.6%,天线具有良好的圆极化和阻抗匹配特性。     

K波段宽带螺旋天线设计

从理论上分析了螺旋天线的设计原理,利用阿基米德螺旋天线实现了一款K波段的高频宽带螺旋天线,使高频天线拥有更轻的质量,更低的剖面及更好的圆极化性。最后通过仿真软件CST设计了一款带宽覆盖18.0~26.5GHz的阿基米德螺旋天线,涵盖了整个K波段。结果表明,该天线在整个频段电压驻波比<2,能很好的满足天线收发要求。