Correction to: Efficient room temperature methanol sensors based on polyaniline/graphene micro/nanocomposites

Iranian Polymer Journal - The article listed above was initially published with typo error in Eq. (4).     

Fabrication and characterization of gridded Pt/SiO2/Si MOS structure for hydrogen and hydrogen sulphide sensing

A gridded gate Pt/SiO₂/Si MOS capacitor has been fabricated for detection of Hydrogen (H₂) and Hydrogen Sulphide (H₂S) gases. The MOS device was fabricated on P-type Si <100> (1–6 Ω cm) wafer with thermal oxide layer of thickness about 100 Å, whereas, Platinum (Pt) gate of ∼350 Å was deposited by thermal evaporation technique. The C–V (capacitance vs voltage) and G–V (conductance vs voltage) measurements have been performed for the evaluation of gas sensing behavior of fabricated MOS capacitor structure in H₂ (250–4000 ppm) and H₂S (1000–6000 ppm) gases at both room and 120 °C temperatures, in a closed chamber in air atmosphere. It has been observed that the value of capacitance decreases with increase in gas concentration. The fabricated MOS capacitor sensor has shown better sensitivity towards H₂ (88.6%) at room temperature (∼25 °C) as compared to (∼45%) at 120 °C. Scanning electron microscopy (SEM) and Atomic force microscopy (AFM) studies have revealed the porous nature of the deposited metal film. The side wall diffusion, spillover of Hydrogen into oxide layer, increase in fixed oxide charge density, increase in surface area caused by gridded structure, the formation of dipole layer and change in interface state density on gas exposure, may be the mechanisms of gas sensing for improved sensitivity of the fabricated MOS device.     

Efficient room temperature methanol sensors based on polyaniline/graphene micro/nanocomposites

Iranian Polymer Journal - The chemically prepared pristine and graphene-doped polyaniline (PANI) samples are utilized for the fabrication of room temperature methanol sensors. For the fabrication...     

Study of conduction mechanism in p-Zn1-xSbxO/n-Si− (x = 0.00, 0.03, 0.05) hetero-junction devices

Journal of Materials Science: Materials in Electronics - Here, we report the fabrication of the p-n hetero-junction devices of p-Zn1-xSbxO/n-Si? grown by utilizing the radio-frequency...     

Self-driven solar-blind ultraviolet photodetectors based on p-Zn1−xSbxO/n-Si− (x = 0.03, 0.05) heterojunction diodes

Journal of Materials Science: Materials in Electronics - Ultra-violet photodetectors based on p-ZnO/n-Si? heterojunctions have been fabricated by radio-frequency magnetron sputtering...     

Effect of ambient gaseous environment on the properties of amorphous carbon thin films

Amorphous carbon films have been deposited by filtered cathodic jet carbon arc technique under different gaseous environments. Scanning electron microscope and atomic force microscope studies have been performed on the deposited films for the surface morphological studies. The morphology of the deposited film changes with the change in gas environment. X-ray photoelectron spectroscopic (XPS) and Raman studies have been carried out on the deposited samples for the evaluation of the chemical bonding of carbon atoms with the ambient gas atoms. The sp³ and sp² contents have been evaluated from the XPS studies and found to be dependent on the gaseous environment. The film deposited under hydrogen environment has the highest value of the sp³ content (54.6 at.%) whereas the film deposited under helium environment has the lowest value of sp³ content (37 at.%). For the evaluation of the electrical and mechanical properties of the deposited films, the electrical conductivity and nanoindentation measurements have been performed on the deposited films. It has been observed that the film deposited under helium environment has the highest electrical conductivity and the lowest hardness (∼15 GPa) value whereas film deposited under hydrogen environment has the highest hardness (∼21 GPa) and the lowest conductivity.     

Fabrication of n-ZnO/p-Si++ Hetero-junction Devices for Hydrogen Detection: Effect of Annealing Temperature

Silicon - In the present study, we report the fabrication of n-ZnO/p-Si++ hetero-junction devices for the detection of hydrogen leakage in ambient air environment. For the fabrication of...