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1.
Phosphorodiamidate morpholino oligomers (PMOs) are oligonucleotide analogs that can be used for therapeutic modulation of pre‐mRNA splicing. Similar to other classes of nucleic acid‐based therapeutics, PMOs require delivery systems for efficient transport to the intracellular target sites. Here, artificial peptides based on the oligo(ethylenamino) acid succinyl‐tetraethylenpentamine (Stp), hydrophobic modifications, and an azide group are presented, which are used for strain‐promoted azide‐alkyne cycloaddition conjugation with splice‐switching PMOs. By systematically varying the lead structure and formulation, it is determined that the type of contained fatty acid and supramolecular assembly have a critical impact on the delivery efficacy. A compound containing linolenic acid with three cis double bonds exhibits the highest splice‐switching activity and significantly increases functional protein expression in pLuc/705 reporter cells in vitro and after local administration in vivo. Structural and mechanistic studies reveal that the lipopeptide PMO conjugates form nanoparticles, which accelerate cellular uptake and that the content of unsaturated fatty acids enhances endosomal escape. In an in vitro Duchenne muscular dystrophy exon skipping model using H2K‐mdx52 dystrophic skeletal myotubes, the highly potent PMO conjugates mediate significant splice‐switching at very low nanomolar concentrations. The presented aminoethylene‐lipopeptides are thus a promising platform for the generation of PMO‐therapeutics with a favorable activity/toxicity profile.  相似文献   
2.
We present a microscopic interpretation of electronic noise in semiconductor materials and two-terminal devices. The theory is based on Monte Carlo simulations of the carrier motion self-consistently coupled with a Poisson solver. Current and voltage noise operations are applied and their respective representations discussed. As application we consider the cases of homogeneous materials, resistors, n+nn + structures, and Schottky-barrier diodes. Phenomena associated with coupling between fluctuations in carrier velocity and self-consistent electric field are quantitatively investigated for the first time. At increasing applied fields hot-carrier effects are found to be of relevant importance in all the cases considered here. As a general result, noise spectroscopy is found to be a source of valuable information to investigate and characterize transport properties of semiconductor materials and devices  相似文献   
3.
Parametric DC measurements on pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistors (MODFETs) were carried out over the 300-405 K temperature range. A gradual channel device model was developed to simulate the temperature dependent behavior and assist in the interpretation of the characteristics. The simulations are shown to provide good predictive ability and confirm the physical reasons why the zero temperature coefficient point of a MODFET occurs only for gate bias voltages below the threshold voltage  相似文献   
4.
This paper discusses the future requirements of integrated construction management systems and the need to support the management of large volumes of information on several levels. The solution proposes a combination of an efficient user interface and methods to partially automate the creation of the required information through access to stored information from past projects. The research follows the path being established for integrated construction management systems that rely on a standard representation of the industry's information requirements. By exploring the comprehensive aspects of construction planning for an integrated construction management system, the research demonstrates the usefulness of applying sound information representation structures. Through the application of case-based reasoning, the research advances the concepts of planning tools as they apply to integrated systems. The resulting prototype construction management system has the primary characteristic of assisting the user in the manipulation of information in order to generate the initial information requirements of an integrated construction management system.  相似文献   
5.
消费电子和通信产业正见证着I/O解决方案从并行到高速串行的转变:能够降低成本、简化设计,并具备可延展性,满足全新带宽的要求。这类接口I/O技术的市场潜力巨大,包括移动电话、DVD-RW和高清晰度LCD电视机,而低功耗、低电磁干扰(EMI)和高数据吞吐量在这些应用中极为重要。因此,业界一直致力于设计和开发这些串行I/O,以低功耗提供高速的数据速  相似文献   
6.
Effects of constant voltage stress (CVS) on gate stacks consisting of an ALD HfO2 dielectric with various interfacial layers were studied with time dependent sensing measurements: DC IV, pulse IV, and charge pumping (CP) at different frequencies. The process of injected electron trapping/de-trapping on pre-existing defects in the bulk of the high-κ film was found to constitute the major contribution to the time dependence of the threshold voltage (Vt) shift during stress. The trap generation observed with the low frequency CP measurements is suggested to occur within the interfacial oxide layer or the interfacial layer/high-κ interface, with only a minor effect on Vt.  相似文献   
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