Fabrication of Dicing-Free Vertical-Structured High-Power GaN-Based Light-Emitting Diodes With Selective Nickel Electroplating and Patterned Laser Liftoff Techniques

Through the use of selective nickel (Ni) electroplating, patterned laser liftoff technique, and surface roughing of the top n-GaN epilayer, a novel process for the fabrication of vertical-structured metal-substrate GaN-based light-emitting diodes (VM-LEDs) to avoid difficulties in Ni substrate dicing and improve device yield was proposed and demonstrated. In conjunction with a sidewall passivation with SiO₂ and keeping the size of epilayer smaller than that of Ni island, a considerable improvement in yield and device performance were shown. As compared to conventional lateral-structured GaN-based LEDs, VM-LEDs show an increase in light output power about 174% at 350 mA with a significant decrease in forward voltage from 3.5 to 3.17 V     

Interferometric method for preventing mode-hopping in tunable external-cavity semiconductor lasers

A problem in frequency-tuning of external-cavity lasers is mode-hopping between neighbouring external-cavity modes. We demonstrate a new interferometric method for monitoring mode-hoping and an automatic control circuit for a 1.3 ?m grating external-cavity laser that maintains single-mode operation when the lasing frequency is tuned.     

Cost Effective VLSI Architectures for Full-Search Block-Matching Motion Estimation Algorithm

In this paper, we present efficient VLSI architectures for full-search block-matching motion estimation (BMME) algorithm. Given a search range, we partition it into sub-search arrays called tiles. By fully exploiting data dependency within a tile, efficient VLSI architectures can be obtained. Using the proposed VLSI architectures, all the block-matchings in a tile can be processed in parallel. All the tiles within a search range can be processed serially or concurrently depending on various requirements. With the consideration of processing speed, hardware cost, and I/O bandwidth, the optimal tile size for a specific video application is analyzed. By partitioning a search range into tiles with appropriate size, flexible VLSI designs with different throughput can be obtained. In this way, cost effective VLSI designs for a wide range of video applications, from H.261 to HDTV, can be achieved.     

Postoperative evaluation in mandibular prognathism treated by bilateral sagittal split osteotomy

The present study was undertaken to evaluate the postoperative relapse from the period of unwiring to 1 year postoperatively and its correlation to the amount of mandibular setback and change in vertical dimension after mandibular bilateral sagittal split osteotomy. Twenty-seven patients were evaluated cephalometrically by the time preoperatively, 6 weeks, 6 months and 1 year postoperatively. It was found that 1) the average amount of mandibular setback at pogonion point, 6 weeks postoperatively, is 7.6mm backward and 1.9mm downward, 2) the average amount of horizontal relapse at pogonion point, 6 months and 1 year postoperatively, are 1.9mm and 2.3mm respectively. 86% of the horizontal relapse, 1 year postoperatively, occurs in the first 6 months after removal of intermaxillary fixation, 3) the average amount of vertical relapse at pogonion point, 6 months and 1 year postoperatively, are 0.9mm and 1.1mm upward. 82% of the vertical relapse, 1 year postoperatively, occurs in the first 6 months after removal of intermaxillary fixation, 4) the amount of 1 year postoperatively horizontal relapse is significantly correlated both with the amount of horizontal mandibular set back and vertical downward change (r = 0.58, 0.67, p < 0.001), whereas the amount of vertical relapse is with the vertical downward change only, but horizontal setback isn't.     

聚酰亚胺的改性

本文介绍了旨在克服聚酰亚胺某些性能缺陷的改性产品 ,其中包括可溶型、透明型、低热膨胀型、共缩聚型、功能型、高粘接型、加成型聚酰亚胺和聚酰亚胺 /无机纳米复合材料等品种的研究动向 ,指出目前应重点研究聚酰亚胺 /无机纳米复合材料     

The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes

In this study, the performance of vertical-structured high-power GaN-based light-emitting diodes (VM-LEDs) with a transparent and low-resistant indium-zinc oxide (IZO) film as a current spreading layer (CSL) was investigated. Nickel electroplating and patterned laser liftoff techniques were employed for the transfer of sapphire substrate to nickel substrate. The novel IZO CSL atop n-side-up VM-LEDs offering benefits of superior current spreading ability, larger extraction efficiency, and lower forward voltage drop was demonstrated. As compared to the regular LED without IZO CSL, the use of an IZO CSL with an optimum thickness of around 300 nm leads to an increase in light output power by 97.1 (67.8)% and a decrease in forward voltage drop by 4.9 (15.5)% under an injection current of 350 (800) mA.     

An automated data acquisition system for modeling thecharacteristics of a soil moisture sensor

Population growth results in an increasing demand on water supply. Usually, growers determine how much water is needed to irrigate their fields on the basis of the amount of time elapsed since the last irrigation cycle. A soil moisture sensor enables the users (or an automated irrigation system) to monitor the relative soil moisture constantly at many different locations throughout the field in order to schedule irrigation cycles more precisely. An automated data acquisition system for measuring the characteristics of a soil moisture sensor under various moisture conditions is presented. Based on the measurement data, an empirical model for the soil moisture sensor is also developed. A comparison of the model and experimental data is included     

Electrochemical pitting behaviour of type 321 stainless steel in sulfide-containing chloride solutions

The pitting behaviour of type 321 stainless steel in sulfide-containing chloride aqueous environments was studied using cyclic potentiodynamic polarization. A well-established correlation between H₂S and Na₂S₂O₃ in the study of corrosion was applied, that is, H₂S was simulated by Na₂S₂O₃. The major factors affecting the pitting corrosion of type 321 stainless steel are the Cl^- concentration, solution pH and temperature. The results clearly indicate that both E_pit and E _pp decrease with increasing Cl^- concentration and temperature, while I _pass is more sensitive to temperature variation. E _pit decreased with decreasing pH in the range 2 < pH < 7.5. The surface morphology and chemistry of the corroded type 321 stainless steel resulting from anodic polarization in 0.01 M S₂O ₃ ^2- -containing Cl^- solution were analysed by XRD, SEM and EPMA. A higher concentration of sulfur was found in the pits, and the dark surface film was mainly composed of FeS and -Fe₂O₃. The results describe the pitting behaviour of type 321 stainless steel in sulfide-containing Cl^- aqueous environments.