阿鸠田电站SF35-16/4100水轮发电机绝缘工艺

云南保山阿鸠田电站由三台SF35-16/4100水轮发电机组成,单机额定容量35 MW,额定电压10.5 kV,定、转子绕组均采用F级绝缘。根据用户要求采用了一些新绝缘结构,并进行了大量的工艺试验,生产中选择优质材料,严格控制工艺过程,使已出厂的三台发电机定、转子线圈及定、转子装配的电气绝缘性能优良。文章就机组定、转子绕组绝缘工艺进行了简要的介绍。     

炼油厂全流程优化建模方法研究

为了克服使用线性规划和单处理单元非线性规划进行生产优化的内在缺点，在建立原油单元、催化裂化、催化重整和汽油调合等4个重要处理单元详细模型的基础上，将单处理单元非线性过程模型集成到一个全流程优化非线性模型中。优化的目标函数是使炼油厂全厂利润最大。决策变量是那些显著影响全厂效益的变量，约束条件是单个处理单元约束条件的集合。对某炼油厂进行实例研究，结果表明该全流程模型能有效处理全厂优化问题，所得利润在线性规划的基础上提高4．5％。     

Effect of modified atmosphere packaging on the shelf-life of coated, whole and sliced mushrooms

Whole and sliced fresh mushrooms (Agaricus bisporus) were packaged with PVC wrap or two polyolefins (PD-941 and PD-961) films after coating with CaCl₂ and chitosan. Package gas composition, color, weight loss and maturity were measured during storage at 12 °C and 80%RH. For PD-961, the highest in-package concentration occurred during the first day of storage regardless of treatments, while wrap and PD-941 showed varying degrees in-package concentration with different processes and coatings. The whiteness of whole mushrooms varied significantly with the type of coating, but not with the type of films. The extent of darkening was greater in coated whole mushrooms than in sliced ones. Weight loss occurred in all packages and varied from 3 (g/100 g) to about 7 (g/100 g) after 6 days of storage. Due to a lower permeability, PD-961 packages had the lowest weight loss. The type of packaging films significantly affected the maturity index, where PD-961 most effectively lowered maturity index for both whole and sliced mushrooms, thus extending the shelf-life. The type of coating did not appear to affect maturity index except for the wrap package where chitosan coating markedly lowered the maturity index of sliced mushrooms.     

可拆装高架火炬的应用

结合工程实例,介绍了我国第一座可拆装高架火炬的基本原理及组成,并对可拆装高架火炬与普通高架火炬在安全、技术、安装、维修、占地面积、投资等方面进行了比较,还分析了高架火炬未来的发展趋势.     

基于CB的串行口和接口板端口程序应用

串行口及接口板端口是计算机通信的主要途径 ,也是目前计算机工程测控中通用的基本方法。C Builder (简称CB)编程语言以其功能完备、开发效率高的特点而成为目前流行的程序开发工具 ,介绍了利用CB语言编写串行口和端口通信的程序的方法 ,并对具体的各方法编写了相应的示例。     

胡桃夹子

富于节日喜庆气氛的芭蕾舞剧《胡桃夹子》录音、录像繁多。这个伦敦科文特花园歌剧院芭蕾舞团的2000年的现场录像与其它版本比较，     

Passive alignment method of polymer PLC devices by using a hot embossing technique

A novel fabrication process using a hot embossing technique has been developed for micromechanical passive alignment of polymer planar lightwave circuit (PLC) devices. With only one step of embossing, single-mode waveguide straight channels and micropedestals for passive aligning are simultaneously defined on a polymer thin film with an accuracy of /spl plusmn/0.5 /spl mu/m. This process reduces the steps for fabricating alignment structures. A fabricated polymer PLC chip and fibers are combined on a v-grooved silicon optical bench (SiOB) in a flip-chip manner. The process provides a coupling loss as low as 0.67 dB per coupling face and a cost-effective packaging solution for various polymer PLC devices.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

高温氨化合成GaN微晶

分别利用Ga2O3粉末和Ga2O3凝胶作为Ga源,采用NH3为N源,在950℃下,分别将两种反应物与流动的NH3反应20 min合成了GaN微晶。用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)对微晶进行结构、形貌的分析,特别是对两种不同途径合成GaN微晶的XRD进行了分析比较。结果表明,当Ga源温度为950℃时两种不同的合成途径均可得到六方纤锌矿结构的GaN单晶颗粒,在氮化温度为850℃和900℃时,利用Ga2O3粉末作为Ga源,仅有少量的Ga2O3转变为GaN;而采用Ga2O3凝胶作为Ga源,在相同的温度下,大部分凝胶经过高温氨化反应均可转化为GaN。