Anisotropic photoresponse investigation of chemical vapor transport (CVT) grown quaternary Cu2ZnSnS4 single crystals

The single crystals of quaternary transition metal chalcogenide Cu₂ZnSnS₄ (CZTS) are grown by a closed system chemical vapor transport technique. The high purity individual elemental precursors are employed in the growth of the crystals. These crystals are found to be single-phase by X-ray diffraction and Raman analysis. The near stoichiometry of the grown crystals is confirmed by spectroscopy analysis of the photoelectron generated by X-rays and analysis of the energy of the dispersive X-rays generated by electrons. The surface study by scanning electron microscopy showed the growth to happen by sheet spread mean and the electron diffraction showed fringe width match with (112) plane spacing. The study of the CZTS/Ag-paste/Cu-wire system for incident white light and three wavelengths of laser lights in two configuration modes of top-contact (II to the plane) and bottom-top-contact (⊥ to the plane) showed anisotropic behavior. The incident white light illumination intensity of 120 mW/cm² showed utmost photoresponse. The top-contact mode configuration showed maximum responsivity and detectivity of 0.72 mA/W and 0.33 × 10⁹ Jones, respectively, while bottom-top-contact showed 0.18 mA/W and 0.13 × 10⁹ Jones, respectively. The anisotropic photoresponse by the CZTS crystals insinuates the potential for future applications.

     

Effect of Sb doping on CVT grown SnTe single crystals electrical and thermal properties

Journal of Materials Science: Materials in Electronics - Pure and Sb-doped SnTe single crystals are grown by chemical vapour transport (CVT) technique. Doping of 5%, 10%, and 15% Sb is done in...