Language independent unsupervised learning of short message service dialect

Noise in textual data such as those introduced by multilinguality, misspellings, abbreviations, deletions, phonetic spellings, non-standard transliteration, etc. pose considerable problems for text-mining. Such corruptions are very common in instant messenger and short message service data and they adversely affect off-the-shelf text mining methods. Most techniques address this problem by supervised methods by making use of hand labeled corrections. But they require human generated labels and corrections that are very expensive and time consuming to obtain because of multilinguality and complexity of the corruptions. While we do not champion unsupervised methods over supervised when quality of results is the singular concern, we demonstrate that unsupervised methods can provide cost effective results without the need for expensive human intervention that is necessary to generate a parallel labeled corpora. A generative model based unsupervised technique is presented that maps non-standard words to their corresponding conventional frequent form. A hidden Markov model (HMM) over a “subsequencized” representation of words is used, where a word is represented as a bag of weighted subsequences. The approximate maximum likelihood inference algorithm used is such that the training phase involves clustering over vectors and not the customary and expensive dynamic programming (Baum–Welch algorithm) over sequences that is necessary for HMMs. A principled transformation of maximum likelihood based “central clustering” cost function of Baum–Welch into a “pairwise similarity” based clustering is proposed. This transformation makes it possible to apply “subsequence kernel” based methods that model delete and insert corruptions well. The novelty of this approach lies in that the expensive (Baum–Welch) iterations required for HMM, can be avoided through an approximation of the loglikelihood function and by establishing a connection between the loglikelihood and a pairwise distance. Anecdotal evidence of efficacy is provided on public and proprietary data.     

Friction Stir Surface Processing of Al 6061 Alloy: Role of Surface Alloying with Copper and Heat-Treatment

The current paper focuses on enhancing the surface hardness of the heat-treatable Al-alloy using the combined approach of thermal-spray, friction stir surface processing (FSSP) and heat-treatment. Copper powder was thermal-sprayed in the surface groove of Al 6061 alloy specimens followed by FSSP. Defect-free stirred zone was observed at lower transverse speed of 10 mm/min. The width of the hardness profiles across the stirred zone was increased with increase in the rotational speed of the tool. Grain refining was observed in the stirred zone due to the FSSP. In post-FSSP T6 heat-treatment, aging kinetics in the non-surface-alloyed specimen was accelerated due to the FSSP. Precipitation of Al₂Cu phase was observed in the stirred zone. Copper-alloying and post-FSSP heat-treatment were effective in enhancing the surface hardness (about 39% improvement in the surface hardness was observed).     

Optimum lateral extent of soil domain for dynamic SSI analysis of RC framed buildings on pile foundations

This article describes a novel approach for deciding optimal horizontal extent of soil domain to be used for finite element based numerical dynamic soil structure interaction (SSI) studies. SSI model for a 12 storied building frame, supported on pile foundation-soil system, is developed in the finite element based software framework, OpenSEES. Three different structure-foundation configurations are analyzed under different ground motion characteristics. Lateral extent of soil domain, along with the soil properties, were varied exhaustively for a particular structural configuration. Based on the reduction in the variation of acceleration response at different locations in the SSI system (quantified by normalized root mean square error, NRMSE), the optimum lateral extent of the soil domain is prescribed for various structural widths, soil types and peak ground acceleration levels of ground motion. Compared to the past studies, error estimation analysis shows that the relationships prescribed in the present study are credible and more inclusive of the various factors that influence SSI. These relationships can be readily applied for deciding upon the lateral extent of the soil domain for conducting precise SSI analysis with reduced computational time.     

Comparison of traditional and flash pyrolysis of different carbon content silicon oxycarbides

This study is to understand the effect of carbon content on the pyrolysis behaviors and phase contents of silicon oxycarbides (SiOCs). Flash pyrolysis conditions, evolution of different SiOC phases, and free carbon types/amounts are compared for C-rich and less C-rich precursors. The C-rich system experiences the flash event at a much lower pyrolysis temperature with a much higher current density even though the internal temperatures at flash are very similar. SiC formation is more obvious for the C-rich samples along with a much higher carbon content under both flash and traditional pyrolysis conditions. The phase contents of SiO₂, SiC, and other SiOC intermediates can be calculated using a Gibbs energy minimization method, showing that the C-rich sample has more C-rich SiOC intermediates while the less C-rich sample has more Si-rich intermediates. This research provides a general framework in assessing the pyrolysis behaviors of different SiOC materials.     

Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

A large-signal method based on non-sinusoidal voltage excitation model is used to study the DC and RF characteristics of Double Avalanche Region (DAR) Silicon Transit Time diode. A large-signal simulation program based on drift-diffusion model is developed for this study. The simulation results show the existence of several distinct negative conductance bands in the admittance characteristics separated by positive conductance. Thus the DAR device is capable of delivering RF power not only at the design frequency but also at several frequency bands higher than the design frequency band in the mm-wave regime. A comparative study with DDR Si device designed to deliver RF power at a particular mm-wave frequency band shows that DAR Si device is capable of delivering significantly higher RF power not only at the designed mm-wave frequency band, but also at higher frequency bands.     

Modeling and Evaluation of a Policy Provisioning Architecture for Mobile Ad-Hoc Networks

The ability to dynamically configure mobile ad-hoc network (MANET) devices is critical for supporting complex services such as quality of service (QoS), security and access control in these networks. In our work, we address the problem of policy distribution and provisioning in MANETs. Previously, we have proposed a policy provisioning architecture that enables the operator, e.g., a military command and control center, to maintain a logically centralized control of the network as a whole, while allowing a physically decentralized and self-managing implementation essential for a MANET environment. In this paper, we present an analytical model of the availability of the policy distribution service in a MANET and analyze the performance using stochastic Petri nets (SPNs). We develop the model at two levels of complexity: as a simple Markovian model with Poisson assumptions and as a more accurate non-Markovian model with general distributions obtained using statistical parameterization. We compare and cross-validate the analytical results with simulation and experimental results. Finally, we illustrate the effectiveness of the architecture for managing QoS for soft real-time applications, using an emulated mobile ad-hoc network testbed.     

Elastic–plastic J and COD estimation schemes for 90° elbow with throughwall circumferential crack at intrados under in-plane opening moment

Leak-before-break (LBB) assessment of primary heat transport piping of nuclear reactors involves detailed fracture assessment of pipes and elbows with postulated throughwall cracks. Fracture assessment requires the calculation of elastic–plastic J-integral and crack opening displacement (COD)¹ for these piping components. Analytical estimation schemes to evaluate elastic–plastic J-integral and COD simplify the calculations. These types of estimation schemes are available for pipes with various crack configurations subjected to different types of loading. However, such schemes for elbow (or pipe bend), which is one of the important components for LBB analyses, is very meager. Recently, elastic–plastic J and COD estimation scheme has been developed for throughwall circumferentially cracked elbow subjected to closing bending moment. However, it is well known that the elbow deformation characteristics are distinctly different for closing and opening bending modes because the ovalisation patterns of elbow cross section are different under these two modes. Development of elastic–plastic J and COD estimation scheme for an elbow with throughwall circumferential crack at intrados subjected to opening bending moment forms the objective of the present paper. Experimental validation of proposed J-estimation scheme has been provided by comparing the crack initiation, unstable ductile tearing loads and crack extension at instability with the test data. The COD estimation scheme has been validated by comparing the COD of test data with the predictions of the proposed scheme.     

A generalized analytical model based on multistage scattering phenomena for estimating the impact ionization rate of charge carriers in semiconductors

A generalized analytical model based on multistage scattering phenomena has been developed in this paper for estimating the impact ionization rate of charge carriers in semiconductors. The probabilities of impact ionization initiated by electrons and holes have been calculated separately by taking into account all possible combinations of optical phonon scattering and carrier-carrier collisions prior to the impact ionization. Finally the analytical expressions of impact ionization rate of electrons and holes have been developed by using the aforementioned impact ionization probabilities. The impact ionization rates of electrons and holes in 4H-SiC have been calculated within the field range of \(2.5\times 10^{8}\) – \(6.5\times 10^{8}\hbox { V m}^{-1}\) by using the analytical expressions of those developed in the present paper. Those are also calculated by using the analytical expressions developed by some other researchers earlier without considering the multistage scattering phenomena. Finally the theoretical results obtained from the analytical model proposed in this paper and the analytical model developed by earlier researchers within the field range under consideration have been compared with the ionization rate values calculated by using the empirical relations fitted from the experimentally measured data. Closer agreement with the experimental data has been achieved when the impact ionization rate of charge carriers in 4H-SiC are calculated from the proposed model as compared to the earlier one.     

Optical control of large-signal properties of millimeter-wave and sub-millimeter-wave DDR Si IMPATTs

The authors have proposed a complete large-signal (L-S) model to investigate the optical modulation of high frequency properties of double-drift region (DDR) impact avalanche transit time (IMPATT) devices operating at different millimeter-wave and sub-millimeter-wave frequencies. Simulation is carried out based on the proposed model to study the effect of photo-irradiation of different values of incident optical power of different wavelengths from 600–1000 nm on the DC and L-S characteristics of DDR IMPATTs based on Si designed to operate at 94, 140, 220, 300 and 500 GHz. Two different optical illumination configurations such as top mount and flip chip are taken into account for the present study. Results show that the maximum optical tuning of L-S parameters of the device can be achieved for optical illumination of wavelength 700 nm, i.e. near the wavelength corresponding to the responsivity peak of Si in both top mount and flip chip configurations. Further, better photo-sensitivity of top mount structure is observed as compared to its flip chip counterpart. The simulation results are found to be in good agreement with the experimental results reported earlier. Suitable tunable light source information is also suggested to carry out the optical control experiment within the wavelength range under consideration.