OA&M framework for multiwavelength photonic transport networks

Photonic networks based on wavelength division multiplexing (WDM) and optical path technologies are expected to realize flexible, transparent, and cost-effective transport networks with a large transmission capacity. This paper explores the design framework of photonic transport networks taking into consideration the operation administration and maintenance (OA&M) functions required for the successful introduction of WDM systems based on the optical path concept. From the view point of network maintenance, clear distinction is made between the optical path layer and the optical section layer to facilitate accurate and smooth failure localization. The digital multiplexing span between physical multiplexing interfaces at the end-to-end digital nodes should have the same maintenance span as the corresponding optical path. We argue that cooperative maintenance by OA&M functions at both the digital and optical layers can be a practical way of network supervision. A supervisory (SV) signal transfer method and a configuration that is suitable for the terrestrial trunk network are also indicated. As an example, a practical SV system design methodology and an actual procedure developed for a single channel optical transmission system based on optical in-line amplifiers are introduced. Furthermore, application of the developed SV system and network restoration schemes is discussed for future WDM-based photonic networks. The OA&M aspects introduced will be valuable for creating future photonic network systems     

Experimental examination of the characteristics of bright-field scanning confocal electron microscopy images

We experimentally examined the characteristics of bright-field (BF) scanning confocal electron microscopy (SCEM) images by changing the observation conditions and comparing the images with those obtained by BF transmission electron microscopy (TEM) and BF scanning TEM (STEM) modes. The observation of 5-nm-diameter Au nanoparticles demonstrated that BF-SCEM produces object elongation of more than 2000?nm along the optical axis, as do BF-TEM and BF-STEM. We demonstrated the relationship between elongation length and geometric effects such as convergence and collection angles of a probe and the lateral size of an object; the relationship is consistent with previous theoretical prediction. Further, we observed interesting features that are seen only in the BF-SCEM images; the film contrast was strongly enhanced, compared with that of BF-STEM. In addition, a bright contrast appeared around the object position in the elongated images. Using this characteristic, we could determine the object position and structure.     

Gain-coupled distributed feedback semiconductor lasers with anabsorptive conduction-type inverted grating

A gain-coupled (GC) distributed feedback (DFB) semiconductor laser with an absorptive conduction-type-inverted grating is proposed. Devices based on GaAlAs/GaAs materials are fabricated using two-step OMVPE. By inverting the conduction type of the absorptive region, threshold current is lowered by 10 mA, which is to compensate for the threshold increase due to extra absorption. In addition, nonlinear output property associated with the saturable nature of the absorption is eliminated. An ultralow chirping capability under gain switching high speed modulation and the narrow linewidth nature of this laser are experimentally studied     

Influence of facet reflection on the performance of a DFB laserintegrated with an optical amplifier/modulator

The influence of output facet reflection on characteristics of a monolithically integrated optical device consisting of a distributed feedback (DFB) laser and an optical amplifier/modulator is analyzed. Basic equations used for the analysis are the characteristic equation for a DFB laser and the rate equations. As a result, it is known that static and dynamic properties of such optical integrated devices are seriously degraded by the optical feedback from the output facet. It is concluded that the power reflectivity of the output facet should be reduced to at least less than 0.1% for the integrated region to work as an optical amplifier and less than 0.01% as an intensity modulator     

40 Gbit/s electroabsorption modulators with impedance-controlled electrodes

A novel travelling-wave electroabsorption optical modulator, electrically matched for 50 /spl Omega/ loads of driving circuit drivers, was developed. The scattering parameter of electric reflection (S/sub 11/) from this modulator is less than -20 dB at 20 GHz. It can thus enable a 40 Gbit/s, 2 km SMF transmission with a 0.3 dB penalty at a 1.3 /spl mu/m wavelength.     

WDM upgrading of an installed submarine optical amplifier system

This paper describes the WDM upgrading of a submarine optical amplifier system installed for single-channel transmission in commercial use. The key technologies used include 10-Gb/s high-speed forward error correction, preemphasis to overcome the optical passband-width constraint, optimized signal pulse format that leads to partial return-to-zero (PRZ) signaling, and dispersion compensation to suppress the degradation caused by fiber nonlinearity and dispersion. It also reports field experimental results on upgraded system performance. The results confirm that simply upgrading the terminal equipment allows the transmission capacity of a submersed line consisting of submarine repeaters and cables to be flexibly increased from 10 Gb/s to 40 Gb/s per fiber pair     

High-power operation of AlGaAs SQW-SCH broad-area laser diodes for Nd:YAG solid-state laser pumping

AlGaAs single-quantum-well separate-confinement-heterostructure (SQW-SCH) single-stripe broad-area laser diodes (LDs) for Nd:YAG solid-state laser pumping were developed. The high-power operation of the SQW-SCH LD was demonstrated. The maximum output power under continuous wave operation at room temperature was 2.6 W in the range of the Nd:YAG absorption band. Stable operation was also confirmed for over 500 h under the condition of 25 degrees C at 1 W under continuous-wave operation.<>     

PZT MIM capacitor with oxygen-doped Ru-electrodes for embedded FeRAM devices

An add-on-type, Pb(Zr,Ti)O/sub 3/ (PZT) metal-insulator- (MIM) capacitor on Al multilevel interconnects is developed for embedded FeRAM devices, concluding that the oxygen-doping into the ruthenium (Ru) electrodes is crucial for obtaining large remnant polarization under a limited process temperature below 450/spl deg/C. The oxygen-doped, Ru bottom-electrode with a granular structure reduces the PZT sputtering temperature below 450/spl deg/C to obtain the ferroelectric perovskite-phase. On the other hand, oxygen doping into the Ru top-electrode suppresses the reductive damage at the interface between the top-electrode and the PZT, keeping the leakage current low. The PZT MIM capacitor with these oxygen-doped, Ru electrodes exhibits the remnant polarization of 21 /spl mu/C/cm/sup 2/ on the Al multilevel interconnects with no degradation of the interconnect reliability, thus applicable to the embedded FeRAM in 0.25 /spl mu/m-CMOS logic LSIs.     

Robust porous SiOCH/Cu interconnects with ultrathin sidewall protection liners

Robust porous low-k/Cu interconnects have been developed for 65-nm-node ultralarge-scale integrations (ULSIs) with 180-nm/200-nm pitched lines and 100-nm diameter vias in a single damascene architecture. A porous plasma-enhanced chemical vapor deposition (PECVD)-SiOCH film (k=2.6) with subnanometer pores is introduced into the intermetal dielectrics on the interlayer dielectrics of a rigid PECVD-SiOCH film (k=2.9). This porous-on-rigid hybrid SiOCH structure achieves a 35% reduction in interline capacitance per grid in the 65-nm-node interconnect compared to that in a 90-nm-node interconnect with a fully rigid SiOCH. A via resistance of 9.7 /spl Omega/ was obtained in 100-nm diameter vias. Interconnect reliability, such as electromigration, and stress-induced voiding were retained with interface modification technologies. One of the key breakthroughs was a special liner technique to maintain dielectric reliability between the narrow-pitched lines. The porous surface on the trench-etched sidewall was covered with an ultrathin plasma-polymerized benzocyclobuten liner (k=2.7), thus enhancing interline time-dependent dielectric breakdown reliability. The introduction of a porous material and the control of the sidewall are essential for 65-nm-node and beyond scaled-down ULSIs to ensure high levels of reliability.