High performance of silicided silicon-sidewall source and drain (S4D) structure

A silicided silicon-sidewall source and drain (S⁴D) structure is proposed for sub-0.1-μm devices. The merit of the S⁴D structure is that the series resistance of the source and drain is significantly reduced since the silicide layer is attached very close to the gate electrode and the silicon sidewall can be doped very highly. Thus, very high drain current drive can be expected, Another advantage of this structure is that the source and drain extensions are produced by the solid-phase diffusion of boron from the highly doped silicon-sidewall. Thus, shallow extensions with very high doping can be realized. A 75-nm gate length pMOSFET fabricated with this structure is shown to exhibit excellent electrical characteristics     

P-MOSFET's with ultra-shallow solid-phase-diffused drain structureproduced by diffusion from BSG gate-sidewall

A p-MOSFET structure with solid-phase diffused drain (SPDD) is proposed for future 0.1-μm and sub-0.1-μm devices. Highly doped ultrashallow p⁺ source and drain junctions have been obtained by solid-phase diffusion from a highly doped borosilicate glass (BSG) sidewall. The resulting shallow, high-concentration drain profile significantly improves short channel effects without increasing parasitic resistance. At the same time, an in situ highly-boron-doped LPCVD polysilicon gate is introduced to prevent the transconductance degradation which arises in ultrasmall p-MOSFETs with lower process temperature as a result of depletion formation in the p⁺-polysilicon gate. Excellent electrical characteristics and good hot-carrier reliability are achieved     

An entropy model for shear deformation of granular materials

A statistical mechanical analogy for characterization of granular materials is discussed by using such notions as the state of the material, the density of states, entropy, canonical distribution and the partition function. The transition law of states during shear deformations of the material is microscopically investigated in the case of two-dimensional model granular materials. The assumption of entropy growth is shown to characterize the dilatancy of the material. A rough proof is given by assuming the measure preserving property of the transition and showing its ergodicity.     

Cooperative behavior of various agents in dynamic environment

The multi-agent model is a model in which agents with limited ability cooperate each other to accomplish a goal. In this paper, we introduce a multi-agent model in which agents are created to imitate real ants. There are two different type of agents, each type of which has a particular task. We designed agents to communicate each other by using pheromone considering noise. On this model, we observed cooperative behavior of agents and evaluated conditions to make an order of behavior in the model.     

High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide

The 35 nm gate length CMOS devices with oxynitride gate dielectric and Ni salicide have been fabricated to study the feasibility of higher performance operation. Nitrogen concentration in gate oxynitride was optimized to reduce gate current I/sub g/ and to prevent boron penetration in the pFET. The thermal budget in the middle of the line (MOL) process was reduced enough to realize shallower junction depth in the S/D extension regions and to suppress gate poly-Si depletion. Finally, the current drives of 676 /spl mu/A//spl mu/m in nFET and 272 /spl mu/A//spl mu/m in pFET at V/sub dd/=0.85 V (at I/sub off/=100 nA//spl mu/m) were achieved and they are the best values for 35 nm gate length CMOS reported to date.     

Effect of the addition of NH4F on anodic behaviors of DSA-type electrodes in H2SO4-(NH4)2SO4 solutions

The effect of NH₄F addition on the high-anodic behaviors of various DSA-type electrodes was investigated in a mixture of sulfuric acid and ammonium sulfate. The pronounced effect of NH₄ addition was observed on DSA-type Ti/RuO₂, Ti/IrO₂?TiO₂ electrodes, but not observed on the other electrodes studied. The close relationship was found between the increment of the electrode potential caused by the NH₄ addition and the quantity of F^? adsorbed on the electrode surface. The effect of NH₄F addition was considered to be resulted from the adsorption of F^? on the electrode surface, and the presence of adsorbed F^? was directly proved.     

Trap Levels in Eu-Doped SrAl2O4 Phosphor Crystals Co-Doped with Rare-Earth Elements

SrAl₂O₄:Eu²⁺ phosphor crystals co-doped with auxiliary activators such as La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, or Y have been grown by the floating zone (FZ) technique. Photoluminescence spectrum (PL), time-resolved PL, and thermally stimulated luminescence (TSL) are evaluated to clarify the long-duration phosphorescence mechanism of SrAl₂O₄, Eu, and Ln phosphors. TSL spectra were measured in the temperature range from RT to 600 K to evaluate the depth and densities of the traps generated by the doping of auxiliary activators that are responsible for the long-duration phosphorescence. The peak wavelength of PL does not vary with auxiliary activator elements, while decay curves vary greatly with the auxiliary activators. The trap depth and the densities of the trapped carriers estimated based on the hole trap model also vary with the auxiliary activator elements. The traps generated at around E =0.5 eV by the auxiliary activators, Nd, Dy, and Tm, with sufficient densities are effective for the long-duration phosphorescence.     

Activation of a Au/TiO2 Catalyst by Loading a Large Amount of Fe–Oxide: Oxidation of CO Enhanced by H2 and H2O

Catalytic activity of a 1 wt% Au/TiO₂ catalyst is markedly improved by loading a large amount of FeO_x, on which the oxidation of CO in excess H₂ is selectively promoted at temperature lower than 60 °C. Oxidation of CO with O₂ on the FeO_x/Au/TiO₂ catalyst is markedly enhanced by H₂, and H₂O moisture also enhances the oxidation of CO but its effect is not so large as the promotion by H₂. We deduced that activation of Au/TiO₂ catalyst by loading FeO_x is not caused by the size effect of Au particles but a new reaction path via hydroxyl carbonyl intermediate is responsible for the superior activity of the FeO_x/Au/TiO₂ catalyst.     

New method for selective growth of diamonds by microwave plasma chemical vapour deposition

Selective nucleation and deposition of diamonds were achieved on an SiO₂-patterned Si substrate. The substrate was pre-treated with an electric field in plasma to introduce diamond nuclei. This treatment did not affect the SiO₂ area. Consequently, diamonds grew only on the area where Si was exposed under the conventional conditions of diamond growth. The maximum nucleation density on the area of SiO₂was about 5 × 10⁷ cm⁻². The ratio of the selectivity was 2 × 10² or higher. This process will be useful and very promising for manufacturing diamond electronic devices.