Results of familiarization of and prospects for a procedure for the burning of wastes in a vortical fluidized bed

Problems that have arisen during tune-up of the production line for the thermal processing of solid household waste by the method of burning in a vortical fluidized bed (principally, a new technology for Russia), and means of their solution are presented. Investigative studies are cited. __________ Translated from élektricheskie Stantsii, No. 6, pp. 20–26, August, 2006.     

Electrical properties and limiting position of the fermi level in InSb irradiated with protons

The results of experimental and simulation studies of electrical parameters and the limiting position of the Fermi level in metallurgically and transmutationally doped InSb irradiated with protons (10 MeV, 2×10¹⁶ cm^?2, 300 K) are reported. It is shown that the limiting electrical parameters of irradiated InSb correspond to a p-type material. Special features of the annealing of radiation defects are studied in the temperature range 20–500°C.     

Absorption Spectra of the Octahedral Complex AmBr63- in the Cs2NaLuBr6 Crystal

Absorption spectra of the Cs₂NaLuBr₆:Am³⁺ (5 mol % of ²⁴³Am) were studied in the 450-2500 nm range at temperatures from 300 to 15 K. The spectra exhibited transitions from the ground level ⁷ F ₀ of the Am3+ (f ⁶) ion to the levels belonging to the ground term (⁷ F ₂, ⁷ F ₄, and ⁷ F ₆) and to the levels of the three excited states: ⁵ L ₆, ⁵ G ₂, and ⁵ D ₂. The vibronic pattern analysis for these transitions enabled localization of 17 electronic sublevels of the americium ion in the octahedral complex AmBr₆ ^3-. One sublevel of the electronic level with odd J value (⁷ F ₅) was localized for which the transition from the ground ⁷ F0 level is forbidden in accordance with the Judd-Ofelt theory. The crystal-field paramaters of the complex studied were calculated.     

Electronic properties of irradiated semiconductors. A model of the fermi level pinning

A theoretical model of a defect state with highest localization in a semiconductor crystal is suggested. This model can be used to calculate the steady-state position of the Fermi level in radiation-modified semiconductors and to estimate the barrier height in metal-semiconductor contacts and the energy-band offsets in semiconductor heterojunctions. It is shown that the deepest level in the band gap of each semiconductor corresponds to the above state. This level plays a role similar to that of the level of electronic chemical potential in a bulk imperfect semiconductor and at the interphase boundary. Numerical calculations of the energy position of the level under consideration in the band gaps of Group IV and III-V compound semiconductors were performed.     

Initiation of Visbreaking of Atmospheric Resid with an Active Electron Beam

Comprehensive studies of the effect of the dose characteristics of an active electron beam on conversion of the components of ozonized and straight-run atmospheric resid were conducted for the first time. It was shown that preliminary ozonation totally alters the mechanism and paths of radiolysis reactions. The structure of the heavy crude oil feedstock changed and the concentration of vanadylporphyrins decreased by 1.3 times. __________ Translated from Khimiya i Tekhnologiya Topliv i Masel, No. 5, pp. 10 – 19, September – October, 2005.     

The effect of neutron irradiation and annealing temperature on the electrical properties and lattice constant of epitaxial gallium nitride layers

Effect of irradiation with high reactor-neutron fluences (Φ = 1.5 × 10¹⁷-8 × 10¹⁹ cm⁻²) and subsequent heat treatments in the temperature range 100–1000°C on the electrical properties and lattice constant of epitaxial GaN layers grown on an Al₂O₃ substrate is considered. It is shown that, with the neutron fluence increasing to (1–2) × 10¹⁸ cm⁻², the resistivity of the material grows to values of about 10¹⁰ Ω cm because of the formation of radiation defects, and, with the fluence raised further, the resistivity passes through a maximum and then decreases to 2 × 10⁶ Ω cm at 300 K, which is accounted for by the appearance of a hopping conductivity via deep defects in the overlapping outer parts of disordered regions. With the neutron fluence raised to 8 × 10¹⁹ cm⁻², the lattice constant c increases by 0.38% at a nearly unchanged parameter a. Heat treatment of irradiated samples at temperatures as high as 1000°C does not fully restore the lattice constant and the electrical parameters of the material.     

Continuous Turbidimetric Analysis of pH Dependent Biological Coalescence Processes

The method described allows rapid analysis, by pH modulation, of the coalescence of small samples of biological materials in dilute suspensions. Specifically, agglutination of various species of viruses and bacteria at their isoelectric points, and the polymerization process of the muscle protein actin are investigated. A typical time of analysis is 20 sec, and 5 ml of suspensions as dilute as 0.2 mg/ml are sufficient for most viruses investigated.     

Electrical properties of InP irradiated with fast neutrons in a nuclear reactor

Electrical properties of single-crystal InP samples with various initial concentrations of charge carriers were studied in relation to the dose of irradiation with fast reactor neutrons and subsequent heat treatments in the temperature range of 20–900°C. It is shown that the behavior electrical properties depends on the doping level of the starting material and that the heat treatment in the aforementioned range of temperatures results in a complete elimination of radiation defects, which makes it possible to apply the method of nuclear-transmutation doping to InP samples. The contribution of nuclear reaction initiated by intermediate-energy neutrons to the total level of nuclear-transmutation doping amounts to about 10%.