Advanced Design of Scanning Infrared Focal Plane Arrays

Modern designs of time delay and integration (TDI) IR linear scanning focal plane arrays (IR FPAs) are analyzed. Advanced designs of linear IR FPAs with increased sensitivity and spatial resolution are proposed. The analysis is based on Monte-Carlo simulation of the diffusion of photogenerated charge carriers in photodiode arrays based on mercury–cadmium–telluride epitaxial layers taking into account the main photoelectric and design parameters of the detectors and optical system.     

Electrical properties of InAs-SiO<Subscript>2</Subscript>-In<Subscript>2</Subscript>O<Subscript>3</Subscript> MIS structures with a modified interface

The effect of composition of the electrolyte used in producing a thin anodic oxide layer at the surface of a semiconductor substrate on the electrical properties of the InAs-SiO₂-In₂O₃ metal-insulator-semiconductor structures is studied. It is shown that introduction of ammonium fluoride into the electrolyte results in the formation of an interface with the density of surface states below 5 × 10¹⁰ cm^?2 eV^?1, the built-in charge (4–5 × 10¹¹ cm^?2, and the maximum relaxation time of the surface potential.     

Fast IR spectrograph (0.5–3.0 μm) based on a hybrid 1 × 384 InAs module

A design and parameters of the IR spectrograph based on an MS2004I monochromator-spectrograph and a hybrid microcircuit of a one-dimensional 1 × 384 InAs focal plane array for registration of fast processes (the registration time from 0.2 ms) are presented. The obtained spectral resolution is 0.3 nm/element at a wavelength of 1.7 μm. The wavelength range registered in a fixed position of the diffraction grating at this wavelength is 118 nm.     

Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface

Technical Physics Letters - The C–V characteristics of Au/Al2O3/In0.52Al0.48As and Au/SiO2/In0.52Al0.48As metal–insulator–semiconductor structures have been studied. It has been...     

Negative differential resistivity of a nonideal Schottky barrier based on indium arsenide

The process of elastic tunneling is investigated theoretically and experimentally for MOS structures with Schottky barriers based on p ⁺-InAs. At liquid-helium temperatures, currentvoltage characteristics are obtained with negative differential resistivity segments. Using the quasiclassical approximation, analytic expressions are obtained for the tunneling transmission coefficient with carrier conversion. It is shown that the decreasing segments of the currentvoltage characteristic are connected with participation in the tunneling process of high-lying quantum-well levels in the n-channel. The calculated current-voltage characteristics are in good agreement with the results of experiment. Fiz. Tekh. Poluprovodn. 31 370–376 (March 1997)     

Multielement hybrid IR FPA based on charge-injected devices: Part II. Thermography systems with InAs elements

Results of experimental investigation of thermography systems based on InAs CID elements of line and matrix hybrid modules (a thermal imager and IR microscope) are presented. Owing to a high time stability, in the short-wave IR range, the implemented thermography systems have a temperature resolution of ～(4–8) mK for an effective frame frequency of 1–10 Hz.     

MIS photodiode with an InAs-based tunnel-transparent oxide layer

Results of studying the possibilities of passivating InAs surfaces by ultrathin oxide films (～3 nm) in a glow-discharge plasma and producing tunnel MIS photodiodes on this basis are presented together with results of investigating the kinetics of oxidation and the chemical composition of oxide films formed. This is the first time when anhysteretic dependences of the capacitance on the bias are observed for InAs-based MIS structures at the liquid nitrogen temperature in a wide field range (from ?7 · 10⁶ to +5 · 10⁶ V/cm). MIS structures are IR-photosensitive in the current mode. The estimated values of detectability are D* = 2.6·10¹²–8.2·10¹² cm·Hz^1/2·W^?1 and D* = 1.5·10¹¹ cm·Hz^1/2·W^?1 at temperatures of 78 and 198 K, respectively. The ampere-watt sensitivity value at a temperature of 78 K is 0.98 A/W, and the quantum efficiency is 0.43 (with no antireflecting coating of the InAs substrate and sapphire window).     

HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector

Journal of Communications Technology and Electronics - Matrix photosensitive elements based on a HgCdTe semiconductor solid solution on silicon substrates with 640 × 512 elements at a pitch of...     

Multielement hybrid IR FPA based on charge-injected devices: Part I. Principles of signal readout

Problems of using charge-injected devices in hybrid infrared focal plane arrays are considered.