A Fully-Human Antibody Specifically Targeting a Membrane-Bound Fragment of CADM1 Potentiates the T Cell-Mediated Death of Human Small-Cell Lung Cancer Cells

Small-cell lung cancer (SCLC) is the most aggressive form of lung cancer and the leading cause of global cancer-related mortality. Despite the earlier identification of membrane-proximal cleavage of cell adhesion molecule 1 (CADM1) in cancers, the role of the membrane-bound fragment of CAMD1 (MF-CADM1) is yet to be clearly identified. In this study, we first isolated MF-CADM1-specific fully human single-chain variable fragments (scFvs) from the human synthetic scFv antibody library using the phage display technology. Following the selected scFv conversion to human immunoglobulin G1 (IgG1) scFv-Fc antibodies (K103.1–4), multiple characterization studies, including antibody cross-species reactivity, purity, production yield, and binding affinity, were verified. Finally, via intensive in vitro efficacy and toxicity evaluation studies, we identified K103.3 as a lead antibody that potently promotes the death of human SCLC cell lines, including NCI-H69, NCI-H146, and NCI-H187, by activated Jurkat T cells without severe endothelial toxicity. Taken together, these findings suggest that antibody-based targeting of MF-CADM1 may be an effective strategy to potentiate T cell-mediated SCLC death, and MF-CADM1 may be a novel potential therapeutic target in SCLC for antibody therapy.     

Air‐Operable,High‐Mobility Organic Transistors with Semifluorinated Side Chains and Unsubstituted Naphthalenetetracarboxylic Diimide Cores: High Mobility and Environmental and Bias Stress Stability from the Perfluorooctylpropyl Side Chain

N,N′‐bis(3‐(perfluoroctyl)propyl)‐1,4,5,8‐naphthalenetetracarboxylic acid diimide (8–3‐NTCDI) was newly synthesized, as were related fluorooctylalkyl‐NTCDIs and alkyl‐NTCDIs. The 8–3‐NTCDI‐based organic thin‐film transistor (OTFT) on an octadecyltrimethoxysilane (OTS)‐treated Si/SiO₂ substrate shows apparent electron mobility approaching 0.7 cm² V^‐1s^‐1 in air. The fluorooctylethyl‐NTCDI (8–2‐NTCDI) and fluorooctylbutyl‐NTCDI (8–4‐NTCDI) had significantly inferior properties even though their chemical structures are only slightly different, and nonfluorinated decyl and undecyl NTCDIs did not operate predictably in air. From atomic force microscopy, the 8–3‐NTCDI active layer deposited with the substrate at 120 °C forms a polycrystalline film with grain sizes >4μm. Mobilities were stable in air for one week. After 100 days in air, the average mobility of three OTFTs decreased from 0.62 to 0.12 cm² V^‐1s^‐1, but stabilized thereafter. The threshold voltage (V_T) increased by 15 V in air, but only by 3 V under nitrogen, after one week. On/off ratios were stable in air throughout. We also investigated transistor stability to gate bias stress. The transistor on hexamethlydisilazane (HMDS) is more stable than that on OTS with mobility comparable to amorphous Si TFTs. V_T shifts caused by ON (30 V) and OFF (–20 V) gate bias stress for the HMDS samples for 1 hour were 1.79 V and 1.27 V under N₂, respectively, and relaxation times of 10⁶ and 10⁷ s were obtained using the stretched exponential model. These performances are promising for use in transparent display backplanes.     

Solution-processed highly adhesive graphene coatings for corrosion inhibition of metals

Nano Research - The corrosion of metals can be induced by different environmental and operational conditions, and protecting metals from corrosion is a serious concern in many applications. The...     

Preparation of monodisperse charged droplets via electrohydrodynamic device for the removal of fine dust particles smaller than 10 μm

Electrohydrodynamic (EHD) device is utilized in various applications and could be useful for the suppression of particulate matter in ambient conditions. In this study, we focused on the ejection of charged droplets containing electrolytes in a microdripping mode and with high charge density. Several different electrolytes with different physical and electrical properties were tested for our EHD process in order to produce the charged droplets stably. Results from series images by high-speed camera represented that droplet size and frequency were dependent on the applied voltage and flow rate, and showed different behaviors in various EHD modes such as dripping, microdripping, mixed dripping, and unstable dripping. Consecutive experimental data for charge density showed that 15?wt% KCl solution was proper to obtain highly charged droplets with the size from 50 to 100?μm. For this solution, the suppression of the fine dust particle was tested for the removal of PM10, PM2.5, and PM1 at various applied voltages. The droplet formation in microdripping mode was effective for the removal of smaller dust particles and could be applicable for the air remediation in indoor or domestic environment.     

Non‐Destructive Wafer Recycling for Low‐Cost Thin‐Film Flexible Optoelectronics

Compound semiconductors are the basis for many of the highest performance optical and electronic devices in use today. Their widespread commercial application has, however, been limited due to the high cost of substrates. Device costs can be significantly reduced if the substrate is reused in a simple, totally non‐destructive and rapid process. Here, a method that allows the indefinite reuse and recycling of wafers is demonstrated, employing a combination of epitaxial “protection layers”, plasma cleaning techniques that return the wafers to their original, pristine, and epi‐ready condition following epitaxial layer removal, and adhesive‐free bonding to a secondary plastic substrate. The generality of this process is demonstrated by fabricating high performance GaAs‐based photovoltaic cells, light emitting diodes, and metal‐semiconductor field effect transistors that are transferred without loss of performance onto flexible and lightweight plastic substrates, and then the parent wafer is recycled for subsequent growth of additional device layers. This process potentially leads to a transformational change in device cost, arising from the inevitable consumption of the wafer that accompanies conventional epitaxial liftoff followed by chemo‐mechanical polishing.