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排序方式: 共有345条查询结果,搜索用时 15 毫秒
1.
Montanari D. Van Houdt J. Groeseneken G. Maes H.E. 《Solid-State Circuits, IEEE Journal of》1998,33(7):1090-1095
This paper presents a high-speed, small-area circuit specifically designed to identify the levels in the read out operation of a flash multilevel memory. The circuit is based on the analog computation of the Euclidean distance between the current read out from a memory cell and the reference currents that represent the different logic levels. An experimental version of the circuit has been integrated in a standard double-metal 0.7-μm CMOS process with a die area of only 140×100 μm2. Operating under a 5-V power supply, this circuit identifies the read-out current of a memory cell, and associates it with the appropriate logic level in 9 ns 相似文献
2.
Croon J.A. Rosmeulen M. Decoutere S. Sansen W. Maes H.E. 《Solid-State Circuits, IEEE Journal of》2002,37(8):1056-1064
In this paper, a physics-based mismatch model is presented. It is demonstrated on a 0.18-/spl mu/m technology that a simple mismatch model can still be used to characterize deep-submicron technologies. The accuracy of the model is examined and found to be within 20% in the strong inversion region. Bulk bias dependence is modeled in a physical way. To extract the mismatch parameters, a weighted fit is introduced. It is shown that the width and length dependence of the mismatch parameters is given by the Pelgrom model. 相似文献
3.
V. Vassilev S. Thijs P. L. Segura P. Wambacq P. Leroux G. Groeseneken M. I. Natarajan H. E. Maes M. Steyaert 《Microelectronics Reliability》2005,45(2):255-268
This paper describes an approach to design ESD protection for integrated low noise amplifier (LNA) circuits used in narrowband transceiver front-ends. The RF constraints on the implementation of ESD protection devices are relaxed by co-designing the RF and the ESD blocks, considering them as one single circuit to optimise. The method is applied for the design of 0.25 μm CMOS LNA. Circuit protection levels higher than 3 kV HBM stress are achieved using conventional highly capacitive ggNMOS snapback devices. The methodology can be extended to other RF-CMOS circuits requiring ESD protection by merging the ESD devices in the functionality of the corresponding matching blocks. 相似文献
4.
Kerber A. Cartier E. Pantisano L. Degraeve R. Kauerauf T. Kim Y. Hou A. Groeseneken G. Maes H.E. Schwalke U. 《Electron Device Letters, IEEE》2003,24(2):87-89
The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling. 相似文献
5.
Bellens R. de Schrijver E. Van den Bosch G. Groeseneken G. Heremans P. Maes H.E. 《Electron Devices, IEEE Transactions on》1994,41(3):413-419
A continued fast interface trap generation is observed in n-channel MOS transistors after termination of the hot-carrier stress. The magnitude of this post-stress effect is strongly dependent on the conditions of the preceding stress, on the post-stress conditions and on the process parameters. For measurements at 293 K, a simple model is proposed which is based on the release of hydrogen by the thermal detrapping of holes, and which can explain the observed dependencies. The importance of the post-stress Dit-generation is illustrated for the case of dynamic stress conditions where it can lead to an apparently deviating degradation behavior 相似文献
6.
H Everaert A Maes AS Hambye L Mesotten L Mortelmans PR Franken 《Canadian Metallurgical Quarterly》1998,26(3):164-9; quiz 172-3
OBJECTIVE: After reading Part III of this series of nuclear cardiology articles, the technologist should be able to: (a) compare and contrast radiopharmaceuticals used for myocardial perfusion imaging; (b) describe imaging protocols used for detecting coronary artery disease; and (c) describe imaging patterns seen following reconstruction of myocardial images. 相似文献
7.
In order to use pillared clays (PILC) for selective adsorption, further modifications of the porous structure are necessary. The deposition of carbon residues onto the porous structure of pillared clays by the carbonization of polymers (polyvinylalcohol) was proposed to achieve a controlled modification of the pore size. Ti and Al-pillared clays (calcined and non-calcined) were impregnated with PVA (different grades and different concentrations and subsequently carbonized to form carbon phases. The effect of the carbon deposits on the porosity of Ti- and Al-PILC is discussed in terms of pore-blocking, pore-filling and pore-narrowing. The deposition of carbon using PVA resulted in a complete pore-blocking for Al-PILC and in a narrowing of the pore size distribution for Ti-PILC, without achieving a controlled pore-narrowing. 相似文献
8.
Pieter Geiregat Carmelita Rodá Ivo Tanghe Shalini Singh Alessio Di Giacomo Delphine Lebrun Gianluca Grimaldi Jorick Maes Dries Van Thourhout Iwan Moreels Arjan J.Houtepen Zeger Hens 《光:科学与应用(英文版)》2021,10(6):1122-1132
2D materials are considered for applications that require strong light-matter interaction because of the apparently giant oscillator strength of the exciton tra... 相似文献
9.
Bert J. Campo David Bevk Jurgen Kesters Jan Gilot Henk J. Bolink Jun Zhao Jean-Christophe Bolsée Wibren D. Oosterbaan Sabine Bertho Jan D’Haen Jean Manca Laurence Lutsen Guy Van Assche Wouter Maes René A.J. Janssen Dirk Vanderzande 《Organic Electronics》2013,14(2):523-534
The introduction of functional moieties in the donor polymer (side chains) offers a potential pathway toward selective modification of the nanomorphology of conjugated polymer:fullerene active layer blends applied in bulk heterojunction organic photovoltaics, pursuing morphology control and solar cell stability. For this purpose, two types of poly(3-alkylthiophene) random copolymers, incorporating different amounts (10/30/50%) of ester-functionalized side chains, were efficiently synthesized using the Rieke method. The solar cell performance of the functionalized copolymers was evaluated and compared to the pristine P3HT:PCBM system. It was observed that the physicochemical and opto-electronic characteristics of the polythiophene donor material can be modified to a certain extent via copolymerization without (too much) jeopardizing the OPV efficiency, as far as the functionalized side chains are introduced in a moderate ratio (<30%) and that preference is given to side chains with a small molar volume. A range of complementary techniques – UV–Vis spectroscopy, (modulated temperature) differential scanning calorimetry, transmission electron microscopy and X-ray diffraction analysis – indicated that variations in polymer crystallinity, while maintaining a high level of regioregularity, are probably the main factor responsible for the observed differences. 相似文献
10.
Koen C. Maes 《Information Sciences》2009,179(9):1221-91
On the one hand, cancellativity properties are mainly used to express to which extend the partial functions of a t-subnorm T are injective. On the other hand, the zooms of T corresponding to its non-trivial Archimedean components are t-subnorms that largely determine T. Fixing one out of four basic types of cancellativity (cancellativity, conditional cancellativity, weak cancellativity and weak conditional cancellativity) we figure out which less restrictive type of cancellativity expresses that all maximal Archimedean zooms of T satisfy the given cancellativity property. We lay bare the mutual relationships between all these types of cancellativity and solve an open problem posed by Klement et al. 相似文献