Lattice Effects and Irreversible Magnetoresistance in Gd Doped La—Ca—Mn—O

The Gd substituting effects for La in La0.67Ca0.33MnO3 has been studied .With increasing the substituting amount of Gd,the phase transition temperature of metal-isolator for the samples decreases,the corresponding peak resistivity increases,the Curie temperature decreases monotonically.The substitution of La-Ca-Mn-O with 11% Gd for La improved the magnetoresistance ratio by an order of magnitude.The effects of substituting Gd can be explained in terms of the lattice effects.An irreversible MR behaviour was observed in Gd-substituting compounds.This effect became marked when the substituting amount of Gd was greater than 7%.A maximum irreversible increment of MR ratio as large as 91% was obtained when Gd substituting amount was 11%.     

吸附特性曲线测量装置的研制

气相缓蚀吸附特性曲线测量装置结构简单,使用方便。利用它可简便地测定待研究金属在气相缓蚀剂和不同气氛共存条件下表面电位的变化以及其他特特性曲线,它对气相缓蚀剂的研究和教学工作都具有一定的实际意义。     

Fe／In2O3磁性颗粒膜的光学特性

研究了射频溅射法制备的磁性颗粒膜的光学特性。发现在Ｉｎ２Ｏ３母体材料中嵌入Ｆｅ颗粒的磁性颗粒膜中，电子的带间跃迁由Ｉｎ２Ｏ３的直接跃迁变为间接跃迁，基本吸收边变平；随磁性粒子所占体积分数的增加，局域态尾变宽，带隙交窄。这是由于嵌入Ｆｅ颗粒后，母体材料与磁性颗粒的界面积增加，具有了较多的表面态，以及母材料的非晶化引起的。     

CdS quantum dot-sensitized solar cells based on nano-branched TiO2 arrays

Nano-branched rutile TiO₂ nanorod arrays were grown on F:SnO₂ conductive glass (FTO) by a facile, two-step wet chemical synthesis process at low temperature. The length of the nanobranches was tailored by controlling the growth time, after which CdS quantum dots were deposited on the nano-branched TiO₂ arrays using the successive ionic layer adsorption and reaction method to make a photoanode for quantum dot-sensitized solar cells (QDSCs). The photovoltaic properties of the CdS-sensitized nano-branched TiO₂ solar cells were studied systematically. A short-circuit current intensity of approximately 7 mA/cm² and a light-to-electricity conversion efficiency of 0.95% were recorded for cells based on optimized nano-branched TiO₂ arrays, indicating an increase of 138% compared to those based on unbranched TiO₂ nanorod arrays. The improved performance is attributed to a markedly enlarged surface area provided by the nanobranches and better electron conductivity in the one-dimensional, well-aligned TiO₂ nanorod trunks.     

Irreversible Colossal Magnetoresistance in La0.58Dy0.09Ca0.33MnO3

The representative sample La0.58Dy0.09Ca0.33MnO3 of Dy doped La0.67Ca0.33MnO3 rare-earth manganites was investigated.The most important effect of Dy doping is to introducethe magnetoimpurity and form the spin clusters which induce dramatically large CMR in Lao.58Dyo.09Cao.33MnO3. The fitting results of field-induced resistivity decrease to the Brillouin function indicate that the CMR is caused by the spin dependent hopping between spin clusters. It is the magnetic field that reduces the size of spin clusters and induces a field-induced irreversible CMR behaviour.     

椭圆形泡沫填充薄壁管斜向冲击吸能特性仿真研究

为了提高汽车在斜向碰撞中的防撞性,提出了一种新型的椭圆形泡沫填充管。以比吸能和冲击力峰值作为评价指标,采用有限元仿真的方法分析了椭圆向心率、壁厚和泡沫铝密度等参数对其斜向冲击吸能特性的影响。结果表明:向心率的减小,在小角度冲击时,可降低冲击力峰值,大角度冲击时,能提高比吸能量;比吸能和冲击力峰值与壁厚近似为线性关系;泡沫铝密度为0.153 g/cm~3时,泡沫填充管的综合比吸能最小,而冲击力峰值则随着泡沫密度的增大而增大。因此,合理地设计椭圆形泡沫填充管参数有利于提高汽车的防撞性,从而提高乘员安全性能。     

聚对苯撑齐聚物的中性态和掺杂态的几何结构特征

采用半经验的Austin Model1(AMl）方法,计算了齐聚物poly(p-phenylene）（PPP）的中性态和带电态的几何结构性质。与中性态相比,带电态下其分子结构表现在C－C键的键长及环与环间的扭转角发生显著的改变。单电荷掺杂导致化子元激发,双电荷掺杂产生双极化子,即使增加链长至12PPP,仍在链中产生双极化子而不是两个分立的单极化子。     

Ultrabroadband MoS2 Photodetector with Spectral Response from 445 to 2717 nm

Photodetectors with excellent detecting properties over a broad spectral range have advantages for the application in many optoelectronic devices. Introducing imperfections to the atomic lattices in semiconductors is a significant way for tuning the bandgap and achieving broadband response, but the imperfection may renovate their intrinsic properties far from the desire. Here, by controlling the deviation from the perfection of the atomic lattice, ultrabroadband multilayer MoS₂ photodetectors are originally designed and realized with the detection range over 2000 nm from 445 nm (blue) to 2717 nm (mid‐infrared). Associated with the narrow but nonzero bandgap and large photoresponsivity, the optimized deviation from the perfection of MoS₂ samples is theoretically found and experimentally achieved aiming at the ultrabroadband photoresponse. By the photodetection characterization, the responsivity and detectivity of the present photodetectors are investigated in the wavelength range from 445 to 2717 nm with the maximum values of 50.7 mA W^?1 and 1.55 × 10⁹ Jones, respectively, which represent the most broadband MoS₂ photodetectors. Based on the easy manipulation, low cost, large scale, and broadband photoresponse, this present detector has significant potential for the applications in optoelectronics and electronics in the future.