Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates

Technical Physics Letters - A new method for epitaxial growth of cadmium sulfide (CdS) films in the metastable cubic phase by atomic-layer deposition on silicon substrates with a buffer layer of...     

Atomic configuration and charge state of hydrogen at dislocations in silicon

The effect of the introduction of hydrogen upon the vibration spectra and electrical characteristics of samples with dislocation networks at the interface of bonded silicon wafers was studied. In order to improve the sensitivity of measurements and to distinguish the signal from dislocation networks in Raman spectra, thin foils conventionally prepared for transmission electron microscopy were used as the sample under investigation. In the samples with dislocation networks, a Raman peak at 2000 cm^–1 was observed. This peak survived after annealing at a temperature of T = 500°C and was not observed in reference samples. Comparison of the experimental data with currently available theoretical calculations allowed one to attribute the observed peak to neutral hydrogen atoms H⁰ at the center of Si–Si bonds. The peak is metastable in the ideal lattice, but becomes stable in the vicinity of dislocations.     

The electrically active centers in oxygen-implanted silicon

Electrically active centers have been firstly studied by the capacitance transient spectroscopy technique in p-Cz-Si implanted with oxygen ions and annealed in a chlorine-containing atmosphere. The temperature dependences of the thermal emission rates of holes from the levels to the valence band were measured and the influence of the annealing conditions on the level concentrations were studied. The deep and shallow levels revealed in the samples with dislocation related luminescence are characterized by similar level parameters to those observed in samples containing extended defects and performed by different techniques (deformation, formation of oxygen precipitates and direct bonding of wafers). Some distinctions in the parameters are associated with the changes of the extended defect strain fields due to specific conditions of their preparing.     

Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum

The parameters of electrically active centers formed during the high-temperature diffusion of boron and aluminum into silicon in various media are studied by the Hall method and capacitance spectroscopy. It is found that the variation in the resistivity of the n base of the structures with p-n junctions fabricated in the study is controlled by the formation of three donor levels Q1, E4, and Q3 with the energies E _c - 0.31, E _c - 0.27, and E _c - 0.16 eV. Diffusion in a chlorine-containing atmosphere introduces only a single level E4, but its concentration is 2.5 times lower, compared with diffusion in air. The values of the ionization energy of the Q3 level, measured under equilibrium (Hall effect) and nonequilibrium (capacitance spectroscopy) conditions, almost coincide. The deepest level E1 with an energy of E _c - 0.54 eV, formed upon diffusion in both media, has no effect on the resistivity in the n base of the structures.