排序方式: 共有27条查询结果,搜索用时 15 毫秒
1.
A. V. Lyutetskii N. A. Pikhtin S. O. Slipchenko N. V. Fetisova A. Yu. Leshko E. G. Golikova Yu. A. Ryaboshtan I. S. Tarasov 《Technical Physics Letters》2003,29(4):290-293
Separate confinement InGaAsP/InP laser heterostructures were grown by metalorganic-hydride vapor-phase epitaxy. High-power single-mode laser diodes of mesastripe design based on these heterostructures operate in a wavelength interval of 1.7–1.8 μm with a maximum continuous room temperature output power of 150 mW. The single-mode lasing regime is maintained up to an output power level of 100 mW. 相似文献
2.
D. A. Vinokurov S. A. Zorina V. A. Kapitonov A. V. Murashova D. N. Nikolaev A. L. Stankevich M. A. Khomylev V. V. Shamakhov A. Yu. Leshko A. V. Lyutetskii T. A. Nalyot N. A. Pikhtin S. O. Slipchenko Z. N. Sokolova N. V. Fetisova I. S. Tarasov 《Semiconductors》2005,39(3):370-373
Asymmetric separate-confinement laser heterostructures with ultrawide waveguides based on AlGaAs/GaAs/InGaAs solid solutions, with an emission wavelength of ~1080 nm, are grown by MOCVD. The optical and electrical properties of mesa-stripe lasers with a stripe width of ~100 μm are studied. Lasers based on asymmetric heterostructures with ultrawide (>1 μm) waveguides demonstrate lasing in the fundamental transverse mode with an internal optical loss of as low as 0.34 cm?1. In laser diodes with a cavity length of more than 3 mm, the thermal resistance is reduced to 2°C/W, and the characteristic temperature T 0= 10°C is obtained in the range 0–100°C. A record-breaking wallplug efficiency of 74% and an output optical power of 16 W are reached in CW mode. Mean-time-between-failures testing for 1000 h at 65°C with an operation power of 3–4 W results in the power decreasing by 3–7%. 相似文献
3.
N. A. Pikhtin A. Yu. Leshko A. V. Lyutetskii V. B. Khalfin N. V. Shuvalova Yu. V. Il’in I. S. Tarasov 《Technical Physics Letters》1997,23(3):214-216
Wavelength tuning over a 12 nm range is obtained for a two-section InGaAsP/InP Fabry-Perot laser (λ=1.55 μm). The method used
to vary the gain profile of the laser allows one to predict the range of possible wavelength tuning.
Pis’ma Zh. Tekh. Fiz. 23, 10–15 (March 26, 1997) 相似文献
4.
E. G. Golikova V. A. Gorbylev N. Yu. Davidyuk V. A. Kureshov A. Yu. Leshko A. V. Lyutetskii N. A. Pikhtin Yu. A. Ryaboshtan V. A. Simakov I. S. Tarasov N. V. Fetisova 《Technical Physics Letters》2000,26(3):225-227
InGaAsP/InP laser heterostructures with two stressed quantum wells operating in the wavelength range 1.3–1.55 μm were obtained by VPE of organometallic compounds. An optical emission power of 2.4 W was reached for the laser diodes with 100-μm wide strips operated in the continuous lasing mode at 20°C. A minimum threshold current density was 260 A/cm2. A differential quantum efficiency ηd= 40% was obtained with a 1.9-mm-long Fabry-Perot resonator. The internal optical losses of the heterostructures are reduced to 2.6–4.2 cm−1. 相似文献
5.
E. G. Golikova V. A. Kureshov A. Yu. Leshko A. V. Lyutetskii N. A. Pikhtin Yu. A. Ryaboshtan G. A. Skrynnikov I. S. Tarasov Zh. I. Alferov 《Semiconductors》2000,34(7):853-856
Wide-mesastripe InGaAsP/InP heterostructure lasers emitting at 1.3–1.5 µm were grown by metal-organic chemical vapor deposition (MOCVD). Radiation-power-current and spectral characteristics of the lasers have been studied in pulsed and continuous wave (cw) operation in the temperature range of 10–60°C. The temperature of the active region of the diode laser is higher by 30–60°C than that of the copper heatsink upon saturation of the cw output power. The temperature dependence of the differential quantum efficiency strongly affects the cw output power. Output powers of 3 and 2.6 W are achieved in mesastripe lasers in cw operation, and 9 and 6.5 W in pulsed operation, at wavelengths of 1.3 and 1.5 µm, respectively. 相似文献
6.
A. Yu. Leshko A. V. Lyutetskii A. V. Murashova N. A. Pikhtin I. S. Tarasov I. N. Arsent’ev B. Ya. Ber Yu. A. Kudryavtsev Yu. V. Il’in N. V. Fetisova 《Technical Physics Letters》1998,24(11):854-856
A methodology has been developed for growing InGaAsP/InP multiwell laser heterostructures by liquid-phase epitaxy. Depth profiling
using a secondary ion mass spectrometer was used to investigate the distribution profiles of the composition of multiwell
laser heterostructures. Liquid-phase epitaxy was used to fabricate InGaAsP/InP multiwell laser heterostructures with active
regions having emission wavelengths of 1.3 and 1.55 μm and their radiative characteristics were studied.
Pis’ma Zh. Tekh. Fiz. 24, 61–67 (November 12, 1998) 相似文献
7.
D. A. Vinokurov S. A. Zorina V. A. Kapitonov A. Yu. Leshko A. V. Lyutetskii D. N. Nikolaev N. A. Pikhtin A. L. Stankevich N. V. Fetisova V. V. Shamakhov I. S. Tarasov 《Semiconductors》2003,37(12):1421-1424
Metal-organic chemical vapor deposition (MOCVD) was used to form laser heterostructures in the system of GaInAsP/GaInP/AlGaInP solid solutions. The design of the laser structure was chosen on the basis of the calculated band offsets at the heteroboundaries in the active region of the waveguide. A maximal optical power of 320 mW is attained at the output of the mesa-stripe diode laser with a stripe width of W=5 µm in continuous-wave mode at 780 nm. 相似文献
8.
Babichev A. V. Kolodeznyi E. S. Gladyshev A. G. Denisov D. V. Voznyuk G. V. Kuritsyn D. I. Mitrofanov M. I. Slipchenko S. O. Lyutetskii A. V. Evtikhiev V. P. Karachinsky L. Ya. Novikov I. I. Pikhtin N. A. Morozov S. V. Egorov A. Y. 《Semiconductors》2020,54(14):1816-1819
Semiconductors - We have created a quantum-cascade laser with 7–8 μm wavelength and surface radiation output through a lattice formed by focused ion beam etching of the upper cladding of... 相似文献
9.
G. S. Sokolovskiĭ D. A. Vinokurov A. G. Deryagin V. V. Dudelev V. I. Kuchinskiĭ S. N. Losev A. V. Lyutetskii N. A. Pikhtin S. O. Slipchenko Z. N. Sokolova I. S. Tarasov 《Technical Physics Letters》2008,34(8):708-710
The dynamics of emission spectra in semiconductor quantum-well lasers generating from two quantum states have been experimentally studied. In the case of electric pumping with 100-ns pulses, the lasing via transitions from the ground state is switched off and the emission from an excited state is switched on within 10–50 ns after laser turn-on. The switching is accompanied by a dip in the intensity of lasing, the duration of which depends on the pumping pulse amplitude. The observed phenomenon is explained in terms of gain clamping and redistribution of the carrier concentration between the ground and excited states. 相似文献
10.
V. V. Mamutin A. P. Vasil’ev A. V. Lyutetskii N. D. Il’inskaya A. A. Usikova Yu. M. Zadiranov N. A. Maleev A. N. Sofronov D. A. Firsov L. E. Vorob’ev V. M. Ustinov 《Technical Physics Letters》2018,44(9):814-816
We report on room-temperature generation at the 4.8-μm wavelength in a lattice-matched structure of a quantum cascade laser (QCL) grown on indium phosphide (InP) substrate. Laser heterostructures grown by molecular beam epitaxy (MBE) comprised 30 cascades and were designed to generate at the 4.80 μm wavelength corresponding to an atmospheric transparency window. Experiments demonstrated effective lasing at temperatures from 80 to 300 K on a wavelength coinciding with the calculated value, which confirmed the high quality of interfaces, high precision of layer thicknesses, and high accuracy of active region doping. 相似文献