Reduced Claudin-12 Expression Predicts Poor Prognosis in Cervical Cancer

Background: Within the claudin (CLDN) family, CLDN12 mRNA expression is altered in various types of cancer, but its clinicopathological relevance has yet to be established due to the absence of specific antibodies (Abs) with broad applications. Methods: We generated a monoclonal Ab (mAb) against human/mouse CLDN12 and verified its specificity. By performing immunohistochemical staining and semiquantification, we evaluated the relationship between CLDN12 expression and clinicopathological parameters in tissues from 138 cases of cervical cancer. Results: Western blot and immunohistochemical analyses revealed that the established mAb selectively recognized the CLDN12 protein. Twenty six of the 138 cases (18.8%) showed low CLDN12 expression, and the disease-specific survival (DSS) and recurrence-free survival rates were significantly decreased compared with those in the high CLDN12 expression group. We also demonstrated, via univariable and multivariable analyses, that the low CLDN12 expression represents a significant prognostic factor for the DSS of cervical cancer patients (HR 3.412, p = 0.002 and HR 2.615, p = 0.029, respectively). Conclusions: It can be concluded that a reduced CLDN12 expression predicts a poor outcome for cervical cancer. The novel anti-CLDN12 mAb could be a valuable tool to evaluate the biological relevance of the CLDN12 expression in diverse cancer types and other diseases.     

Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.     

Establishment time of liquid flow in a bath agitated by bottom gas injection

The establishment time of gas-liquid two-phase flows in a cylindrical bath agitated by bottom gas injection through a central single-hole bottom nozzle was investigated. Because the turbulence intensity in the bath was comparable to or larger than the unity, the conventional definition of the flow establishment time based on the history of mean velocity was not suitable for the present case. In fact, it was difficult to determine the flow establishment time based on the well-known 90 or 99 pct criterion for the mean velocity. Accordingly, two methods of determining the flow establishment time by focusing on the turbulence components instead of the mean velocity components were proposed. Velocity measurements were made with a two-channel laser Doppler velocimeter. The flow establishment time was correlated as a function of gas flow rate. Close agreement was obtained by the two methods.     

The importance of electrochemistry-related etching in thegate-groove fabrication for InAlAs/InGaAs HFETs

For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors     

Design and characteristics of InGaAs/InP composite-channel HFET's

A design for composite-channel structures consisting of an InGaAs channel and an InP subchannel for use as heterostructure field-effect transistors is presented for the first time. This novel channel structure takes advantage of both the high drift velocity and low impact ionization of InP at high electric fields as well as the high electron mobility of InGaAs at low electric fields. It is shown that the doping density of the InP subchannel is the key parameter to realize the advantages of the composite channel. A very high transconductance of 1.29 S/mm and a current gain cutoff frequency of 68.7 GHz are achieved with 0.6 and 0.7 /spl mu/m gates, respectively. The average velocity of electrons in the composite channel is 2.9/spl times/10/sup 7/ cm/s. The devices have no kink phenomena in their I-V characteristics possibly due to low impact ionization in the InP subchannel.<>     

Body effects on SAR distributions for microwave exposures in a realistic model of the human head.

The finite-difference time-domain (FDTD) simulations of specific absorption rate (SAR) in a human head exposed to microwaves have, to date, been carried out on models of the head only. This was because it was believed that the body effects on the average SAR of the head could be ignored at high frequencies of around 1 GHz. That opinion, however, was based on inappropriate calculation conditions and is therefore unreliable. In this paper, we have re-examined the body effects on the SAR distributions in a realistic homogeneous model of the adult head exposed to microwaves. We found that the SAR on the eye surface of the head-only model exposed to E-polarized waves was 31% smaller than that of the whole-body model at 900 MHz, and 43% larger at 1.5 GHz. For a size that can practically be considered whole-body, it is necessary to have the top of the head to the belly for 900 MHz and to the chest area for 1.5 GHz. The previously unclear body effects of H-polarized waves were assumed to be less than those of E-polarized waves, suggesting that the chest area would be sufficient for both frequencies.     

Series resonant ZCS‐PFM DC‐DC power converter with high‐frequency high‐voltage transformer link for high‐power magnetron drive

This paper presents a single lossless inductive snubber‐assisted ZCS‐PFM series resonant DC‐DC power converter with a high‐frequency high‐voltage transformer link for industrial‐use high‐power magnetron drive. The current flowing through the active power switches rises gradually at a turned‐on transient state with the aid of a single lossless snubber inductor, and ZCS turn‐on commutation based on overlapping current can be achieved via the wide range pulse frequency modulation control scheme. The high‐frequency high‐voltage transformer primary side resonant current always becomes continuous operation mode, by electromagnetic loose coupling design of the high‐frequency high‐voltage transformer and the magnetizing inductance of the high‐frequency high‐voltage transformer. As a result, this high‐voltage power converter circuit for the magnetron can achieve a complete zero current soft switching under the condition of broad width gate voltage signals. Furthermore, this high‐voltage DC‐DC power converter circuit can regulate the output power from zero to full over audible frequency range via the two resonant frequency circuit design. Its operating performances are evaluated and discussed on the basis of the power loss analysis simulation and the experimental results from a practical point of view. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 153(3): 79–87, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20126     

Fractal dimension of the grain boundary fracture in creep-fracture of cobalt-based heat resistant alloys

The effects of grain boundary configuration and creep conditions on the fractal dimension of the grain boundary fracture (D _f) were investigated using commercial cobalt-based heat resistant alloys, namely, HS-21 and L-605 alloys. Creep-rupture experiments were carried out under the initial creep stresses of 19.6–176 MPa in the temperature range from 1089–1422 K in air. The value of D _f was larger in specimens with serrated grain boundaries than in those with straight grain boundaries in the HS-21 alloy under the same creep condition, and the difference in the value of D _f between these specimens was large in the scale range of the analysis which was less than about one grain boundary length. However, there was almost no difference in the value of D _f between the specimens with serrated grain boundaries and those with straight grain boundaries in the L-605 alloy, because there was no obvious difference in the microstructure between these specimens. The value of D _f increased with decreasing creep stress in the scale range of the fractal analysis larger than about one grain boundary length in both HS-21 and L-605 alloys, while the stress dependence of D _f was larger in the HS-21 alloy. The stress dependence of D _f was explained by the stress dependence on the number of grain boundary microcracks linked to the fracture surface. The value of D _f estimated in the scale range smaller than about one grain boundary length showed essentially no stress dependence in both L-605 and HS-21 alloys.     

Sensitivity of an anadically oxidized aluminium film on a surface acoustic wave sensor to humidity

The sensitivity, transient response and sensitivity mechanism of a surface acoustic wave humidity sensor using porous anodically oxidized aluminium (alumina) films as mechanical interfaces have been studied theoretically and experimentally. It is found that the sensitivity of alumina films of 1.0 μm thickness is -0.034 m/(s %RH) and is the same order as that of polyimide films. The transient response of alumina films to humidity is about one order faster than that of polyimide films. For the sensitivity mechanism, the phase-velocity change is attributed to the mechanical perturbation caused by the absorption of water molecules. The equivalent density change of alumina films between 0 and 100%RH is about 0.7%. In addition, the actual stiffness constants of alumina films are two orders less than those of bulk alumina.     

Structures and electronic properties of surface/edges of nanodiamond and nanographite

The structure, electronic and magnetic properties of nanodiamond and nanographite/nanographene are investigated. Detonation nanodiamond particles that are covered with amorphous graphitic composites are hydrothermally treated to remove the graphitic surface composites and to terminate the surface carbon atoms with hydrogen. The number of localized spins of dangling bonds and the hydrogen concentration increase upon the increase in the hydrothermal treatment time up to 40 h. Above 40 h, both drop discontinuously, a surface structural reconstruction was suggested. The creation of dangling bonds and an incomplete hydrogenation of the surface carbon atoms destabilize the surface, resulting in the structural reconstruction. Nanodiamond particles are thermally converted to nanographite/nanographene. A single nanographene sheet is successfully prepared by heat-treating nanodiamond particles. The edge of graphene sheet with its edge carbon atoms being hydrogen-terminated is investigated by UHV-STM/STS. Zigzag edges are found to have non-bonding π-state of edge origin, in good agreement with theoretical prediction.