Transmission study of germanium using free-electron laser

We have measured optical transmittance through germanium in the mid-infrared region at room temperature using the Osaka free-electron laser (FEL). In spite of the fact that germanium is transparent in the mid-infrared region, we observed strong suppression of optical transmission under high-intensity FEL excitation. We found that the observed suppression is due to optical absorption in germanium. To analyze the experimental results, we have calculated optical transmittance of germanium within Keldysh theory     

Formation and Characterization of Ce3ZrO8 Prepared by the Hydrazine Method

A compound denoted as (Ce_0.75Zr_0.25)O₂ (Ce, ZrO₈) is formed near room temperature from cerium and zirconium nitrates using hydrazine monohydrate. It has a cubic unit cell with a = 0.5342 nm. Characterization of powders heated to various temperatures at 10°C/min demonstrates that the specific surface area does not decrease below 20 mVg until >1000°C.     

Monte Carlo simulation of hydrogen absorption in palladium and palladium–silver alloys

A modified Monte Carlo (MC) simulation was performed to investigate the hydrogen absorption behavior in Pd and Pd–Ag alloys of the composition Pd_xAg_1−x (x=0.7–0.8) under H₂ pressure (0.1 MPa) at different temperatures. The present method employed can consider the dissociative adsorption of hydrogen molecule and the subsequent absorption of hydrogen atom by formalizing the relationship between the pressure of hydrogen molecule and hydrogen atom. The potential parameters were determined to reproduce the solution enthalpy of hydrogen in pure metals. The results are in good agreement with experimental findings as well as previous theoretical studies. We confirmed that our method is useful to simulate the absorption of hydrogen in metals and alloys.     

Rutile-type TiO2 thin film for high-k gate insulator

We investigated rutile-type titanium dioxide (TiO₂) films for possible use as a high-k gate insulator. The TiO₂ thin films were directly deposited on Si substrates using a RF magnetron sputtering method with a sintered oxide target. A single phase of rutile-type TiO₂ whose dielectric constant of approximately 75 was obtained when the film was deposited in an inert gas atmosphere and annealed at 800 °C in an oxidizing gas atmosphere. The oxygen ions were deficient in the as-deposited film, and consequently, a sufficient oxygen supply was needed to crystallize the film to a single phase of rutile during the post-annealing. However, the interfacial SiO₂ layer between the TiO₂ and the Si substrate simultaneously grew thicker than 2 nm. As the interfacial SiO₂ grew, the leakage current was decreased and the equivalent oxide thickness was increased, in the Au/rutile-type TiO₂/Si capacitor. Therefore, we concluded that the growth of the interfacial SiO₂ layer thicker than 2 nm is inevitable to form the single phase of rutile-type TiO₂ and to decrease the leakage.     

Pressure anomaly in the paramagnetic region of bcc solid3He

The isochoric pressure of bcc Solid³He in the vicinity of the triple point has been measured by changing the temperature stepwisely and waiting for thermal equilibrium. We observed anomalous pressure kinks of the temperature dependence in the paramagnetic region near the triple point. This anomaly appeared at 0.37 to 0.40 tesla, and disappeared below 0.36 tesla. Moreover, critical phenomena at the transition point from the paramagnetic phase (PP) to the high field phase was observed and the phase line curves toward the PP side.     

Properties of thin TiN films deposited onto stainless steel by an in-line dry coating process

A new coil-coating pilot plant, capable of utilizing ion plating, sputtering and plasma-assisted chemical vapor deposition (PACVD) processes, independently or in series, was developed and optimum conditions for TiN, TiC, Al_xO_y, SiO_x and Cr coating were established. This paper is mostly concerned with the results of characterization (conducted in parallel by the authors′ two institutions) of TiN films deposited by ion plating or sputtering onto type-304 stainless steel strips. In particular, the dependence of the basic properties such as chemical composition, structure, adhesion, and color on the coating process are discussed with respect to anti-corrosion, anti-wear, and decorative applications. TiN coatings with a very attractive gold coloration were obtained; they performed well in wear testing, but did not show satisfactory corrosion resistance. However, it was found that the latter can be improved significantly by depositing a SiO_x, top layer by PACVD above the TiN coating. Thus the in-line dry coating processes are capable of producing highly functional steel surfaces with decorative color and high corrosion resistance.     

Clonal change of HTLV-1 infected lymphocytes before onset of adult T-cell leukemia/lymphoma

A 73-year-old HTLV-1 infected male developed overt ATL following 3-years observation, and the clonality of HTLV-1 infected cells changed before overt ATL onset. 10 micrograms of DNA, extracted from mononuclear cells was digested with PstI, and the clonal proliferation of HTLV-1 infected cells was examined by Southern blotting with LTR probe. 4 bands were observed 3 years prior to ATL onset, and 2 different bands were detected 2 years and 6 months later. This suggests that in some ATL cases, the clonality of monoclonally proliferated HTLV-1 infected cells may be changeable before overt ATL onset.     

Problem pharmaceutical patents

These days, the number of pharmaceutical patent applications which do not specify the principal active ingredient in the form of a chemical name or structure is increasing. These patents are difficult to retrieve in retrospective on-line searches using chemical structures or keywords. Furthermore, even if you could find them, the situation with regard to patentability is obscure and this causes considerable problems for the experts in charge of the patent search. If you are a searcher for a large pharmaceutical company, you might already be apprehensive of infringing such patents. We, the JFA,^* gathered these patents together and studied the differences between their patentability in Japan, the US and the EPO.