Graphdiyne (GDY) is emerging as a promising material for various applications owing to its unique structure and fascinating properties. However, the application of GDY in electronics and optoelectronics are still in its infancy, primarily owing to the huge challenge in the synthesis of large-area and uniform GDY film for scalable applications. Here a modified van der Waals epitaxy strategy is proposed to synthesize wafer-scale GDY film with high uniformity and controllable thickness directly on graphene (Gr) surface, providing an ideal platform to construct large-scale GDY/Gr-based optoelectronic synapse array. Essential synaptic behaviors have been realized, and the linear and symmetric conductance-update characteristics facilitate the implementation of neuromorphic computing for image recognition with high accuracy and strong fault tolerance. Logic functions including “NAND” and “NOR” are integrated into the synapse which can be executed in an optical pathway. Moreover, a visible information sensing-memory-processing system is constructed to execute real-time image acquisition, in situ image memorization and distinction tasks, avoiding the time latency and energy consumption caused by data conversion and transmission in conventional visual systems. These results highlight the potential of GDY in applications of neuromorphic computing and artificial visual systems.
Artificial synapses are the key building blocks for low-power neuromorphic computing that can go beyond the constraints of von Neumann architecture. In comparison with two-terminal memristors and three-terminal transistors with filament-formation and charge-trapping mechanisms, emerging electrolyte-gated transistors (EGTs) have been demonstrated as a promising candidate for neuromorphic applications due to their prominent analog switching performance. Here, a novel graphdiyne (GDY)/MoS2-based EGT is proposed, where an ion-storage layer (GDY) is adopted to EGTs for the first time. Benefitting from this Li-ion-storage layer, the GDY/MoS2-based EGT features a robust stability (variation < 1% for over 2000 cycles), an ultralow energy consumption (50 aJ µm−2), and long retention characteristics (>104 s). In addition, a quasi-linear conductance update with low noise (1.3%), an ultrahigh Gmax/Gmin ratio (103), and an ultralow readout conductance (<10 nS) have been demonstrated by this device, enabling the implementation of the neuromorphic computing with near-ideal accuracies. Moreover, the non-volatile characteristics of the GDY/MoS2-based EGT enable it to demonstrate logic-in-memory functions, which can execute logic processing and store logic results in a single device. These results highlight the potential of the GDY/MoS2-based EGT for next-generation low-power electronics beyond von Neumann architecture. 相似文献
Memory plays a vital role in modern information society. High-speed and low-power nonvolatile memory is urgently demanded in the era of big data. However, ultrafast nonvolatile memory with nanosecond-timescale operation speed and long-term retention is still unavailable. Herein, an ultrafast nonvolatile memory based on van der Waals heterostructure is proposed, where a charge-trapping material, graphdiyne (GDY), serves as the charge-trapping layer. With the band-engineered heterostructure and excellent charge-trapping capability of GDY, charges are directly injected into the GDY layer and are persistently captured by the trapping sites in GDY, which result in an ultrafast writing speed (8 ns), a low operation voltage (30 mV), and a long retention time (over 104 s). Moreover, a high on/off ratio of 106 is demonstrated by this memory, which enables the achievement of multibit storage with 6 discrete storage levels. This device fills the blank of ultrafast nonvolatile memory technology, which makes it a promising candidate for next-generation high-speed and low-power-consumption nonvolatile memory. 相似文献