Triple junctions of inclined and mixed grain boundaries in nickel

The structure of triple junctions of large-angle inclined boundaries 〈111〉 and 〈100〉 and mixed grain boundaries in nickel is investigated by a molecular-dynamic method. The equilibrium triple junction has no structural features that would identify it as a special defect against the background of the corresponding grain boundaries. The effective radius of the triple junctions and the width of the grain boundaries are determined.     

Structure and hot-rolled reinforcement rods properties evolution in the process of long service life

The physical nature of mechanical properties of hot-rolled reinforcement rods degradation during long-life operation is established by methods of transmission diffraction electron microscopy. It is shown that strength and plasticity properties decrease is due to cementite plates cutting and dissolution, microcracks formation process as a result of interstitial phase inclusions creation in the near-surface layer of material.     

A Method of Attenuating High-Power Laser Radiation with 1.06 μm Wavelength Using a Diffraction Grating

Measurement Techniques - A method of attenuating high-power laser radiation using a small metal diffraction grating as an attenuator for power measurement was analyzed. The thermal operating modes...     

Calculation of the radiation power absorbed by a photodiode from its experimental current-voltage characteristics

The effect of measurement errors in the current-voltage characteristics on the accuracy with which the radiation power q absorbed by the photodiode is determined is investigated theoretically. A procedure for measuring the current-voltage characteristic using exponential averaging is proposed, which enables experimental curves to be obtained that are uniform with respect to the measurement of the noise. Statistical distributions of the quantity q are presented from which the systematic and random errors due to the measurement noise are determined.     

Determination of the internal quantum efficiency of a photodiode by means of its current-voltage characteristic

It is proposed for the first time that a number of basic characteristics of an optically thick photoelectric diode may be determined from its current-voltage characteristic. It is shown that it is theoretically possible to determine the internal quantum efficiency of a photodiode by means of model calculations. The solution of the inverse problem is based on a comparison of theoretical dependences obtained with the use of the PC1D program with “experimental” current-voltage characteristics.