Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)

Journal of Electronic Materials - This paper presents a systematic study of Al0.23Ga0.77N/GaN/AlxGa1?xN double-heterojunction high-electron-mobility transistors (DH-HEMTs) with a boron-doped...     

Synthesis,characterization, crystal structure,hirshfeld surface analysis and DFT calculations of N-(pyridin-2-ylmethyl)furan-2-carboxamide and its molecular docking

The crystal structure of N-(pyridin-2-ylmethyl)furan-2-carboxamide was elucidated by single crystal X-ray diffraction and characterized by NMR, FT-IR, UV–Vis spectroscopic techniques. In this molecule, the dihedral angle between furan and pyridine rings is 73.52(14)°. The compound crystallized in an orthorhombic lattice with a space group of Pca2₁ [a?=?9.677(5), b?=?10.674(5), and c?=?9.087(4)Å]. The Hirshfeld surface analysis (HSA) for determining the N–H···O intermolecular hydrogen bonding interactions, generated the chain shaped 3D network structure and associated fingerprint plot calculations gave the contribution ratios for C–H, H–H, O–H, and N–H contacts, indicating a higher propensity for H–H interactions to form the crystal. The energies of frontier molecular orbitals (FMO) were computed to make clear knowledge about the global reactivity and charge transfer property of the compound by density functional theory (DFT). Also, to get the charge distribution details, the molecular electrostatic potential (MEP) of the compound was measured. The molecular docking study was carried out to understand the binding of the compounds toward the molecular targets c-Jun N-terminal kinase 3, PMI2, and CDC7 kinase.

     

Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications

The paper reports on the influence of a barrier thickness and gate length on the various device parameters of double gate high electron mobility transistors (DG-HEMTs). The DC and RF performance of the device have been studied by varying the barrier thickness from 1 to 5 nm and gate length from 10 to 150 nm, respectively. As the gate length is reduced below 50 nm regime, the barrier thickness plays an important role in device performance. Scaling the gate length leads to higher transconductance and high frequency operations with the expense of poor short channel effects. The authors claim that the 30-nm gate length, mole fractions tuned In_0.53Ga_0.47As/In_0.7Ga_0.3As/In_0.53Ga_0.47As subchannel DG-HEMT with optimised device structure of 2 nm In_0.48Al_0.52As barrier layer show a peak g_m of 3.09 mS/µm, V_T of 0.29 V, I_ON/I_OFF ratio of 2.24 × 10⁵, subthreshold slope ~73 mV/decade and drain induced barrier lowering ~68 mV/V with f_T and f_max of 776 and 905 GHz at V_ds = 0.5 V is achieved. These superior performances are achieved by using double-gate architecture with reduced gate to channel distance.     

The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications

Journal of Computational Electronics - A Δ-shaped gate GaN-based E-mode vertical current-aperture vertical electron transistor (CAVET) device with a boron-doped current block layer (B-CBL) on...