Characterization of β-In2−xAlxS3 thin films prepared by chemical spray pyrolysis technique

Indium sulfide (In₂S₃) is a good window or buffer layer for photovoltaic application. In this work, β-In_2?xAl_xS₃ thin films with different thicknesses (400, 442, 646 and 714 nm) are successfully synthesized on heated glass substrates using a chemical spray pyrolysis technique. The thin film thickness effect on the structural, optical and photoluminescence (PL) properties of β-In_2?xAl_xS₃ material is studied. The X-ray diffraction patterns suggest the formation of β-In₂S₃ cubic phase preferentially oriented towards (400) direction. The level of the residual dislocation seems to be reduced to 3.12 × 10⁹ lines mm^?2 for the optimum thickness (646 nm) for which the β-In_2?xAl_xS₃ film crystallinity is the best one. In order to enhance the electrical properties, β-In_2?xAl_xS₃ layers are annealed in air at 400 °C for different annealing times (15, 30 and 45 min). The minimum resistivity, maximum Hall mobility and carrier concentration are found for β-In_2?xAl_xS₃ films annealed for 30 min. All samples have high transmittance of about 75 % but the wide band gap (E_g = 3.32 eV) is obtained for this optimum thickness. This result indicates good optical quality of β-In_2?xAl_xS₃ layers. Defects-related PL properties are also discussed.     

Optical study of zinc blend SnS and cubic In2S3:Al thin films prepared by chemical bath deposition

Multilayers of zinc blend SnS crystalline thin film have been deposited onto glass substrates by a chemical bath deposition (CBD) method. The envelope method, based on the optical transmission spectrum taken at normal incidence, has been successfully applied to determine the layer thickness and to characterize optical properties of thin films having low surface roughness. Optical constants such as refractive index n, extinction coefficient k, as well as the real (??_r) and imaginary (??_i) parts of the dielectric constant were determined from transmittance spectrum using this method. Obtained low value of the extinction coefficient in the transparency domain is a good indication of film surface smoothness and homogeneity. To perform the heterojunction structure based on SnS absorber material, cubic In₂S₃:Al was deposited on SnO₂:F/glass as window layer using CBD with different aluminum content. Optical properties of these films were evaluated.     

A convenient synthesis of alkyl-2-(2-imino-4-oxothiazolidin-5-ylidene)acetate derivatives involving an electrogenerated base of acetonitrile

We report a simple method for the synthesis of alkyl-2-(2-imino-4-oxothiazolidin-5-ylidene) acetate derivatives 3 in good yields under mild conditions. The electrogenerated cyanomethyl base (EGB), obtained from electroreduction of acetonitrile-0.1?M TBABF₄, assists the reaction between thiourea derivatives 1 and dialkyl acetylene dicarboxylate 2. The expected products, 3/4, and the structure obtained from X-ray diffraction confirm that the main products are the five-membered heterocycles 3. Furthermore, a mechanism, to explain the reaction pathways, is proposed based on the thermodynamic and kinetic data obtained from quantum calculations.     

Effect of copper doping on physical properties of nanocrystallized SnS zinc blend thin films grown by chemical bath deposition

SnS: Cu thin films have been successfully prepared on Pyrex substrates using low cost chemical bath deposition (CBD) technique with different copper doped concentration (y = [Cu]/[Sn] = 5%, 6%, 8%, 9% and 10%). The structure, the surface morphology and the optical properties of the SnS:Cu films were studied by X-ray diffraction (XRD), atomic force microscopy (AFM) and spectrophotometer measurements, respectively. To obtain a thickness of the order of 780 ± 31 nm for absorber material in solar cell devices, a system of multilayer has been prepared. It is found that the physical properties of tin sulphide are affected by Cu-doped concentration. In fact, X-ray diffraction study showed that better cristallinity in zinc blend structure with preferential orientations (111)^ZB and (200)^ZB, was obtained for y equal to 6%. According to the AFM analysis we can remark that low average surface roughness (RMS)value of SnS(ZB) thin film obtained with Cu-doped concentrations equal to y = 6%, is about of 54 nm. Energy dispersive spectroscopy (EDS) showed the existence of Cu in the films. Optical analyses by means of transmission T(λ) and reflection R(λ) measurements show 1.51 eV as a band gap value of SnS:Cu(6%) which is nearly equal to the theoretical optimum value of 1.50 eV for efficient light absorption. On the other hand, Cu-doped tin sulphide exhibits a high absorption coefficient up to 2 × 10⁶ cm⁻¹, indicating that SnS:Cu can be used as an absorber thin layer in photovoltaic structure such as SnS:Cu/ZnS/SnO₂:F and SnS:Cu/In₂S₃/SnO₂:F, where ZnS and In₂S₃ are chemically deposited in a previous studies.     

Structural,optical and electrical properties of Ag doped PbS thin films: role of Ag concentration

The present work reports on the chemical synthesizes of (0–8 at.%) silver (Ag)-doped PbS thin films with tunable opto-electrical properties. From the X-ray diffraction analyses, it was understood that the preferred growth orientation of Ag:PbS films was dependent on the Ag doping concentration. The variation in the Ag:PbS films orientation was reflected in the film morphology as observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). SEM studies revealed that the variation in Ag concentration lead to different grain shapes for different grain orientations. The AFM study showed that the RMS roughness of the undoped PbS film has been reduced considerably due to silver doping. From the optical studies, a widening in the optical band gap was revealed after Ag-doping due to the quantum confinement effect. It was obtained that 4 at.% Ag-doped PbS thin films display an optimum band gap value of 1.45 eV. As for electrical characterization result, the resistivity reduces and the carrier density improved with 4 at.% Ag concentration. Based on all the data, it was concluded that the 4 at.% Ag-doped PbS thin film showed the best morphological, optical and electrical behavior, which recommend it as an active layer for solar cell devices.