A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning

A 16 Mb embedded DRAM macro in a fully CMOS logic compatible 90 nm process with a low noise core architecture and a high-accuracy post-fabrication tuning scheme has been developed. Based on the proposed techniques, 61% improvement of the sensing accuracy is realized. Even with the smallest 5 fF/cell capacitance, a 322 MHz random-cycle access while 32 ms data retention time which contributes to save the data retention power down to 60 /spl mu/W are achieved.     

Photolytic crosslinking of poly(p-hydroxystyrene)

Light-induced crosslinking of poly(p-hydroxystyrene) (PPHS) is significantly enhanced by O₂. This was evidenced by molar mass (light scattering measurements) and by gel content determinations which were performed on various polymer samples before and after continuous irradiation at λ_inc = 254 nm. The following mechanism was elucidated with the aid of flash photolysis studies: Crosslinking in the absence or presence of O₂ is mainly due to the combination of phenoxyl type radicals. In the absence of O₂ the latter are exclusively formed by O? H bond cleavage of singlet excited phenolic groups. Triplet excited phenolic groups which are also formed do not deactivate via O? H bond cleavage but react very effectively with O₂. This reaction leads to the formation of HO and additional phenoxyl type radicals. All Commercial and most laboratory-prepared PPHS samples contain chemically bound impurities of quinoid nature. On the basis of results performed with model compounds of low molar mass, it is concluded that triplet excited quinoid groups react effectively with phenolic groups forming phenoxyl type radicals and that they are quite unreactive with respect to the abstraction of alphatic hydrogen atoms. Irradiation of PPHS at λ_inc = 254 nm causes the formation of quinoid groups which absorb strongly at this wavelength. Light absorption by these groups becomes a determining factor with respect to photochemical alteration in the course of further irradiation.     

Radiation damage of SiC Schottky diodes by electron irradiation

The impact of radiation damage on the device performance of 4H-SiC Schottky diodes, which are irradiated at room temperature with 2-MeV electrons is studied. After irradiation the reverse current increases, while the forward current and the capacitance decrease with barrier height and carrier density. The decrease of the barrier height is mainly responsible for the increase of the reverse current, while the decrease of the forward current for a high fluence is caused by the increase of the resistance in the bulk of the crystal. Although no electron capture levels are observed before irradiation, three electron capture levels (E₁, E₂, and E₃) are induced after irradiation. It is noted that the decrease in carrier density is partly caused by the contribution of non-observed electron capture level in the DLT spectrum, which compensates the free carriers.     

Methodology to optimize radiation protection in radioactive waste disposal after closure of a disposal facility based on probabilistic approach

We propose a methodology to optimize radiation protection in radioactive waste disposal after the closure of a disposal facility based on a probabilistic approach. In this methodology, a set of alternative options of the disposal system design with the associated uncertainties estimated through a probabilistic approach are developed. Then, the methodology evaluates the advantages and disadvantages of each option for the optimization of radiation protection, in which it is possible to determine the compliance with a dose constraint of 0.3 mSv/y and to collect information for making a decision on the optimization. In particular, the obtained information on the exposure, which is the mode and width of the dose distribution, can be converted into information on engineering measures and site conditions for the options. This process allows us to discuss which option should be selected as the optimal option by considering the balance between the exposure and the engineering, economic, and social feasibility of the option. This methodology is helpful for providing clear reasons why an optimal disposal system design is selected by combining quantitative information on the exposure and the feasibility of each option.     

Synthesis of sulfonated organic–inorganic hybrids through the radical copolymerization of vinyl sulfonate esters and vinyl trialkoxysilanes

Novel organic–inorganic hybrids with sulfonic acid groups were prepared using random copolymers composed of vinyl sulfonate esters and vinyl trialkoxysilanes. Five vinyl sulfonate esters with different substituent groups were employed as protecting monomers for the production of the poly(vinyl sulfonic acid) component, and three vinyl trialkoxysilanes were used as cross-linkable monomers. Free radical and reversible addition-fragmentation chain transfer (RAFT) copolymerizations were performed for the production of random copolymers with two different functional groups. The selective deprotection of the sulfonate esters of the copolymers proceeded smoothly and resulted in the formation of copolymers with lithium vinyl sulfonate units and cross-linkable trialkoxysilane units. The co-condensation of the trialkoxysilane moieties in the deprotected copolymers with cross-linkers yielded transparent hybrid films that contained lithium sulfonate groups without aromatic rings or ester linkages.     

Phase Relationships and Physical Properties of Homologous Compounds in the Zinc Oxide-Indium Oxide System

Equilibrium phase relationships in the ZnO-In₂O₃ system were determined between 1100° and 1400°C using solid-state reaction techniques and X-ray diffractometry. In addition to ZnO and In₂O₃, nine homologous compounds, Zn _k In₂O _{k +3} (where k = 3, 4, 5, 6, 7, 9, 11, 13, and 15), were observed. Electrical conductivity and diffuse reflectance of the k = 3, 4, 5, 7 and 11 members were measured before and after annealing at 400°C for 1 h under forming gas (4%₂-96% N₂). Room-temperature conductivity increased as k decreased, because of increased carrier concentration as well as increased mobility. In general, transparency in the wavelength range of 450-900 nm increased as k increased. Reduction in forming gas resulted in increased conductivity and reduced transparency for all compounds measured. The highest room-temperature conductivity measured, 270 S/cm, was that of reduced Zn₃In₂O₆.