Microstructure and Magnetic Properties of Sn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ni<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>2</Subscript> Thin Films Prepared by Flash Evaporation Technique

An effort was made to develop semiconductor oxide-based room temperature dilute magnetic semiconductor (DMS) thin films based on wide band gap and transparent host lattice with transition metal substitution. The Sn\(_{\mathrm {1}-x}\)Ni\(_{x}\textit {O}_{\mathrm {2}}\) (\(x\,= \mathrm {0.00, 0.03, 0.05, 0.07, 0.10, and \,0.15}\)) thin film samples were prepared on glass substrates by flash evaporation technique. All the samples were shown single phase crystalline rutile structure of host SnO\(_{\mathrm {2}}\) with dominant (110) orientation. The Ni substitution promotes reduction of average crystallite size in SnO\(_{\mathrm {2}}\) as evidenced from the reduction of crystallite size from 40 (SnO\(_{\mathrm {2}}\)) to 20 nm (Sn\(_{\mathrm {0.85}}\)Ni\(_{\mathrm {0.15}}\textit {O}_{\mathrm {2}}\)). In the energy dispersive spectra as well as X-ray photoelectron spectra of all the samples show, the chemical compositions are close to stoichiometric with noticeable oxygen deficiency. The crystalline films were formed by coalescence of oval-shaped polycrystalline particles of 100 nm size as evidenced from the electron micrographs. The energy band gap of DMS films decreases from 4 (SnO\(_{\mathrm {2}}\)) to 3.8 eV (x \(=\) 0.05) with increase of Ni content. The magnetic hysteresis loops of all the samples at room temperature show soft ferromagnetic nature except for SnO\(_{\mathrm {2}}\) film. The SnO\(_{\mathrm {2}}\) films show diamagnetic nature and it converts into ferromagnetic upon substitution of 3 % Sn\(^{\mathrm {4+}}\) by Ni\(^{\mathrm {2+}}\). The robust intrinsic ferromagnetism (saturation magnetization, 21 emu/cm\(^{\mathrm {3}}\)). Further increase of Ni content weakens ferromagnetic strength due to Ni-O antiferromagnetic interactions among the nearest neighbour Ni ions via O\(^{\mathrm {2-}}\) ions. The observed magnetic properties were best described by bound magnetic polarons model.     

Photoluminescence properties of MgAl2O4:Dy powder phosphor

Trivalent dysprosium (Dy³⁺) activated magnesium alluminate phosphors were synthesized by high temperature solid state reaction method. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Fourier transform infrared spectroscopy (FT-IR), photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting phosphors. The results show that the obtained MgAl₂O₄:Dy³⁺ phosphors have good crystallinity, spherical morphology with sizes ranged from 120 to 140 nm and strong blue emission under an excitation of 258 nm. The emission spectrum of this phosphor consists of two emission bands: blue band and yellow band, and the emission intensity of the former is stronger than that of the later. Luminescence quenching is explained and the corresponding luminescence mechanisms have been proposed.     

Interstitial Mo‐Assisted Photovoltaic Effect in Multilayer MoSe2 Phototransistors

Thin‐film transistors (TFTs) based on multilayer molybdenum diselenide (MoSe₂) synthesized by modified atmospheric pressure chemical vapor deposition (APCVD) exhibit outstanding photoresponsivity (103.1 A W^?1), while it is generally believed that optical response of multilayer transition metal dichalcogenides (TMDs) is significantly limited due to their indirect bandgap and inefficient photoexcitation process. Here, the fundamental origin of such a high photoresponsivity in the synthesized multilayer MoSe₂ TFTs is sought. A unique structural characteristic of the APCVD‐grown MoSe₂ is observed, in which interstitial Mo atoms exist between basal planes, unlike usual 2H phase TMDs. Density functional theory calculations and photoinduced transfer characteristics reveal that such interstitial Mo atoms form photoreactive electronic states in the bandgap. Models indicate that huge photoamplification is attributed to trapped holes in subgap states, resulting in a significant photovoltaic effect. In this study, the fundamental origin of high responsivity with synthetic MoSe₂ phototransistors is identified, suggesting a novel route to high‐performance, multifunctional 2D material devices for future wearable sensor applications.     

Aligned carbon nanotube-polymer hybrid architectures for diverse flexible electronic applications

We present the fabrication and electrical characterization of a flexible hybrid composite structure using aligned multiwall carbon nanotube arrays in a poly(dimethylsiloxane) (PDMS) matrix. Using lithographically patterned nanotube arrays, one can make these structures at any length scale from submicrometer levels to bulk quantities. The PDMS matrix undergoes excellent conformal filling within the dense nanotube network, giving rise to extremely flexible conducting structures with unique electromechanical properties. We demonstrate its robustness against high stress conditions, under which the composite is found to retain its conducting nature. We also demonstrate that these structures can be utilized directly as flexible field-emission devices. Our devices show some of the best field-enhancement factors and turn-on electric fields reported so far.